AOS Semiconductor Product Reliability Report AOD417 rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: (408) 830-9742 www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOD417. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOD417 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AOD417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen Free 2 II. Die / Package Information: Process Package Type Lead Frame Die Attach Bond wire Mold Material Flammability Rating Backside Metallization Moisture Level AOD417 Standard sub-micron Low voltage P channel process 3 leads TO252 Bare Cu Soft solder S: Al, 12mils; G: Au, 1.3mils Epoxy resin with silica filler UL-94 V-0 Ti / Ni / Ag Up to Level 1 * Note * based on info provided by assembler and mold compound supplier III. Result of Reliability Stress for AOD417 Test Item Test Condition Time Point Solder Reflow Precondition HTGB 168hr 85°c /85%RH +3 cycle reflow@260°c Temp = 150°°c , Vgs=100% of Vgsmax HTRB HAST Pressure Pot Lot Attribution Total Sample size - 9 lots 1210pcs 0 168 / 500 hrs 1 lot 82pcs 0 1000 hrs (Note A*) 168 / 500 hrs 1 lot 1000 hrs (Note A*) 130 +/- 2°°c , 85%RH, 33.3 psi, Vgs = 80% of Vgs max 100 hrs 9 lots 121°°c , 29.7psi, 100%RH 96 hrs Temp = 150°°c , Vds=80% of Vdsmax -65°°c to 150°°c , air to air, 82pcs 0 77+5 pcs / lot 0 50+5 pcs / lot 275pcs 0 8 lots 50+5 pcs / lot 440pcs 0 (Note B*) 50+5 pcs / lot (Note B*) 250 / 500 cycles 77+5 pcs / lot 495pcs 5 lots (Note B*) Temperature Cycle Number of Failures 3 III. Result of Reliability Stress for AOD417 Continues DPA Internal Vision Cross-section X-ray CSAM NA 5 5 5 5 5 5 0 NA 5 5 0 Bond Integrity Room Temp 150°°c bake 150°°c bake 0hr 250hr 500hr 40 40 40 40 wires 40 wires 40 wires 0 Solderability 245°°c 5 sec 15 15 leads 0 Solder dunk 260°°c 10secs 3 cycles 1 30 units 0 Note A: The HTGB and HTRB reliability data presents total of available AOD417 burn-in data up to the published date. Note B: The pressure pot, temperature cycle, HAST and HTS reliability data for AOD417 comes from the AOS generic package qualification data. IV. Reliability Evaluation FIT rate (per billion): 128 MTTF = 891 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AOD417). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion device hours. 2 9 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10 9 6 MTTF = 10 / FIT =7.81 x 10 hrs =891 years / [2 (164) (168) (258)] = 128 Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°c) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10 -5eV / K 4