AO4627 30V Complementary MOSFET General Description Product Summary The AO4627 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications. N-Channel VDS= 30V P-Channel -30V ID= 4.5A (VGS=10V) -3.5A (VGS=-10V) RDS(ON) RDS(ON) < 50mΩ (VGS=10V) < 100mΩ (VGS=-10V) < 68mΩ (VGS=4.5V) < 165mΩ (VGS=-4.5V) 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested SOIC-8 D1 D2 Top View Bottom View Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 n-channel Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS TA=25°C Continuous Drain Current ID TA=70°C S1 p-channel Max p-channel -30 Units V ±20 ±20 V 4.5 -3.5 A 3.5 -2.5 Pulsed Drain Current C IDM 25 -20 Avalanche Current C IAS, IAR 8 -8 A Avalanche energy L=0.1mH C EAS, EAR 3 3 mJ 2 2 1.3 1.3 TA=25°C Power Dissipation B PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 0: July 2011 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 W °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 9 AO4627 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Max 30 1 TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 25 Units V VDS=30V, VGS=0V IGSS µA ±100 nA 2 2.5 V 39 50 63 78 VGS=4.5V, ID=3A 50 68 mΩ 10 1 V 2.5 A VGS=10V, ID=4.5A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=4.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss A 0.79 mΩ S 135 170 210 pF VGS=0V, VDS=15V, f=1MHz 25 35 45 pF 13 23 33 pF VGS=0V, VDS=0V, f=1MHz 1.7 3.5 5.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.05 5 nC Qg(4.5V) Total Gate Charge 2 3 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, ID=4.5A VGS=10V, VDS=15V, RL=3.3Ω, RGEN=3Ω 0.55 nC 1 nC 4.5 ns 1.5 ns 18.5 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=4.5A, dI/dt=100A/µs 7.5 Qrr Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/µs 2.5 15.5 ns 10 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: July 2011 www.aosmd.com Page 2 of 9 AO4627 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 10V VDS=5V 4.5V 12 4V 8 7V ID(A) 6 ID (A) 9 3.5V 6 3 2 VGS=3V 0 25°C 0 0 1 2 3 4 5 1 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 60 Normalized On-Resistance 2 VGS=4.5V RDS(ON) (mΩ Ω) 125°C 4 50 40 VGS=10V 30 1.8 VGS=10V ID=4.5A 1.6 17 5 2 VGS=4.5V 10 I =3A 1.4 1.2 D 1 0.8 0 2 4 6 8 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 10 0 110 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=4.5A 1.0E+01 40 1.0E+00 IS (A) RDS(ON) (mΩ Ω) 90 125°C 70 1.0E-01 1.0E-02 1.0E-03 50 125°C 25°C 1.0E-04 25°C 30 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: July 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 9 AO4627 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 300 VDS=15V ID=4.5A 250 Capacitance (pF) VGS (Volts) 8 6 4 200 Ciss 150 100 Coss 2 50 Crss 0 0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 100.0 TA=25°C 10µs RDS(ON) limited 100 100µs 1.0 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C DC Power (W) ID (Amps) 10.0 10 10s 1 0.0 0.01 0.1 1 VDS (Volts) 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=90°C/W 0.1 PD 0.01 Ton T 0.001 0.00001 Rev 0: July 2011 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 100 1000 Page 4 of 9 AO4627 Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 0: July 2011 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 9 AO4627 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V VDS=-30V, VGS=0V -30 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage ID(ON) On state drain current VDS=VGS, ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-3.5A RDS(ON) Typ -5 -1.4 VGS=-4.5V, ID=-2A VDS=-5V, ID=-3.5A IS=-1A,VGS=0V gFS Forward Transconductance VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance µA ±100 nA -1.9 -2.4 V 78 100 111 140 120 165 mΩ -1 V -2.5 A -20 TJ=125°C Units V -1 TJ=55°C Static Drain-Source On-Resistance Max A 6 -0.8 mΩ S 155 197 240 pF VGS=0V, VDS=-15V, f=1MHz 28 42 55 pF 15 26 37 pF VGS=0V, VDS=0V, f=1MHz 3.5 7.2 11 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.3 5.2 nC Qg(4.5V) Total Gate Charge 2.2 3 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=-15V, ID=-3.5A 0.7 nC 1.1 nC 7.5 ns 4.1 ns 11.8 ns VGS=10V, VDS=-15V, RL=4Ω, RGEN=3Ω IF=-3.5A, dI/dt=100A/µs 11.3 Body Diode Reverse Recovery Charge IF=-3.5A, dI/dt=100A/µs 4.4 3.8 ns 14 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: July 2011 www.aosmd.com Page 6 of 9 AO4627 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 -10V VDS=-5V -6V -8V 12 8 -5V 6 -ID(A) -ID (A) 9 -4.5V 4 6 125°C -4V 2 3 25°C VGS=-3.5V 0 0 0 1 2 3 4 5 1 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2 3 4 5 6 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 200 1.6 Normalized On-Resistance 180 160 RDS(ON) (mΩ Ω) VGS=-4.5V 140 120 100 80 VGS=-10V 60 40 VGS=-10V ID=-3.5A 1.4 17 5 2 VGS=-4.5V 10 1.2 1 ID=-2A 0.8 0 2 4 6 8 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 10 0 300 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=-3.5A 1.0E+01 260 40 1.0E+00 -IS (A) RDS(ON) (mΩ Ω) 220 180 125°C 1.0E-01 1.0E-02 125°C 25°C 140 1.0E-03 100 25°C 1.0E-04 60 1.0E-05 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: July 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 9 AO4627 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 300 VDS=-15V ID=-3.5A 250 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 200 150 100 2 50 0 0 Coss Crss 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 100.0 TA=25°C 10µs RDS(ON) limited 100µs 1.0 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C 100 Power (W) 10.0 -ID (Amps) 0 5 10 10s DC 0.0 1 0.01 0.1 1 -VDS (Volts) 10 100 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: July 2011 www.aosmd.com Page 8 of 9 AO4627 Gate Charge Test Circuit & W aveform Vgs Qg -10V - - VDC + VDC Qgs Vds Qgd + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) td(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 0: July 2011 Vgs L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 9 of 9