AON4605 30V Complementary MOSFET General Description Product Summary The AON4605 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. N-Channel VDS= 30V P-Channel -30V ID= 4.3A (VGS=10V) -3.4A (VGS=-10V) Top View RDS(ON) RDS(ON) < 50mΩ (VGS=10V) < 110mΩ (VGS=-10V) < 70mΩ (VGS=4.5V) < 180mΩ (VGS=-4.5V) D1 DFN 3x2A Bottom View D2 Top View S1 1 8 D1 G1 2 7 D1 S2 G2 3 6 4 5 D2 D2 G1 G2 S1 Pin 1 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current ID TA=70°C C IDM TA=25°C Power Dissipation B PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 2: Feb. 2011 Steady-State Steady-State Max p-channel -30 Units V ±20 ±20 V 4.3 -3.4 3.4 -2.7 18 -13 1.9 1.9 1.2 1.2 TJ, TSTG Symbol t ≤ 10s RθJA RθJL www.aosmd.com S2 p-channel -55 to 150 Typ 51.5 82 40 A W °C Max 65 100 50 Units °C/W °C/W °C/W Page 1 of 9 AON4605 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 18 VGS=10V, ID=4.3A TJ=125°C VGS=4.5V, ID=2.5A 100 nA 2 2.5 V 36 50 57 80 48 70 mΩ 1 V 2.5 A 210 pF A gFS Forward Transconductance VDS=5V, ID=4.5A 11 VSD Diode Forward Voltage IS=1A,VGS=0V 0.8 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 IGSS Coss Units 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ 170 VGS=0V, VDS=15V, f=1MHz mΩ S 35 pF 23 pF 3.5 5.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.05 5 nC Qg(4.5V) Total Gate Charge 2 3 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=4.3A 1.7 0.55 nC 1 nC 4.5 ns tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Body Diode Reverse Recovery Time IF=4.3A, dI/dt=100A/µs 7.5 Qrr Body Diode Reverse Recovery Charge IF=4.3A, dI/dt=100A/µs 2.5 VGS=10V, VDS=15V, RL=3.4Ω, RGEN=3Ω Turn-Off Fall Time 1.5 ns 18.5 ns 15.5 ns 10 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: Feb. 2011 www.aosmd.com Page 2 of 9 AON4605 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 VDS=5V 10V 4V 4.5V 12 8 7V 6 ID(A) ID (A) 9 3.5V 4 6 125°C VGS=3V 3 2 25°C 0 0 0 1 2 3 4 1 5 1.5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 70 Normalized On-Resistance 2 60 RDS(ON) (mΩ ) 2 VGS=4.5V 50 40 VGS=10V 30 1.8 VGS=10V ID=4.5A 1.6 1.4 1.2 VGS=4.5V ID=3A 1 17 5 2 10 0.8 0 2 4 6 8 10 0 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 120 25 50 1.0E+02 ID=4.5A 1.0E+01 100 40 125°C 80 IS (A) RDS(ON) (mΩ ) 1.0E+00 1.0E-01 125°C 1.0E-02 60 1.0E-03 25°C 40 25°C 1.0E-04 20 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 2: Feb. 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 9 AON4605 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 10 VDS=15V ID=4.5A 250 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 200 150 100 Coss 2 50 Crss 0 0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 TA=25°C 10µs 100 RDS(ON) limited 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 DC 0.1 1 10 10s 0.0 0.01 Power (W) ID (Amps) 10.0 10 100 1 0.00001 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=100°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 Rev 2: Feb. 2011 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 100 1000 Page 4 of 9 AON4605 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 2: Feb. 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 9 AON4605 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V VDS=-30V, VGS=0V -30 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage ID(ON) On state drain current VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-3.4A RDS(ON) -1.4 Forward Transconductance Diode Forward Voltage IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance µA 100 nA -1.9 -2.4 V 77 110 100 140 125 180 mΩ -1 V -2.5 A 240 pF A mΩ 6 -0.8 DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance V -13 VGS=-4.5V, ID=-2A VDS=-5V, ID=-3.4A IS=-1A,VGS=0V VSD Units -5 TJ=125°C Static Drain-Source On-Resistance Max -1 TJ=55°C gFS Coss Typ 197 VGS=0V, VDS=-15V, f=1MHz S 42 pF 26 37 pF 7.2 11.0 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.3 5.2 nC Qg(4.5V) Total Gate Charge 2.2 3 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=-15V, ID=-3.4A 3.5 0.7 nC 1.1 nC 7.5 ns VGS=10V, VDS=-15V, RL=4.4Ω, RGEN=3Ω 4.1 ns 11.8 ns IF=-3.4A, dI/dt=100A/µs 11.3 Body Diode Reverse Recovery Charge IF=-3.4A, dI/dt=100A/µs 4.4 Body Diode Reverse Recovery Time 3.8 ns 14 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: Feb. 2011 www.aosmd.com Page 6 of 9 AON4605 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 -10V VDS=-5V -6V -8V 12 8 -5V 6 -4.5V -ID(A) -ID (A) 9 4 6 125°C -4V 25°C 2 3 VGS=-3.5V 0 0 0 1 2 3 4 0 5 1 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 200 Normalized On-Resistance 1.6 180 160 RDS(ON) (mΩ ) 2 VGS=-4.5V 140 120 100 VGS=-10V 80 60 VGS=-10V ID=-3.4A 1.4 17 5 2 VGS=-4.5V 10 I =-2A 1.2 1 D 0.8 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 300 ID=-3.4A 1.0E+01 260 40 1.0E+00 -IS (A) RDS(ON) (mΩ ) 220 125°C 180 125°C 1.0E-01 1.0E-02 25°C 140 1.0E-03 25°C 100 1.0E-04 60 1.0E-05 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 2: Feb. 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 9 AON4605 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 300 VDS=-15V ID=-3.4A 250 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 200 150 100 Coss 2 50 0 0 Crss 0 1 2 Q (nC) 3 4 g Figure 7: Gate-Charge Characteristics 0 5 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 100.0 TA=25°C 10µs 100 RDS(ON) limited 1.0 100µs 1ms DC 10ms Power (W) -ID (Amps) 10.0 10 0.1 TJ(Max)=150°C TA=25°C 10s 0.0 0.01 0.1 1 10 100 1 0.00001 -VDS (Volts) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=100°C/W 0.1 PD Single Pulse 0.01 Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 2: Feb. 2011 www.aosmd.com Page 8 of 9 AON4605 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 2: Feb. 2011 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 9 of 9