AO6604 20V Complementary MOSFET General Description Product Summary The AO6604 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. N-Channel VDS= 20V P-Channel -20V ID= 3.4A (VGS=4.5V) -2.5A (VGS=-4.5V) RDS(ON) RDS(ON) < 65mΩ (VGS=4.5V) < 75mΩ (VGS=-4.5V) < 75mΩ (VGS=2.5V) < 95mΩ (VGS=-2.5V) < 100mΩ (VGS=1.8V) < 115mΩ (VGS=-1.8V) TSOP6 Top View D2 D1 Bottom View Top View G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 G1 G2 S1 Pin1 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 20 Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current ID TA=70°C C IDM TA=25°C Power Dissipation B PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 4: Sep 2010 Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL www.aosmd.com Units V V ±8 ±8 -2.5 2.5 -2 13 -13 1.1 1.1 0.7 0.7 -55 to 150 Typ 78 106 64 p-channel Max p-channel -20 3.4 TJ, TSTG S2 A W °C Max 110 150 80 Units °C/W °C/W °C/W Page 1 of 9 AO6604 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Typ V 1 TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±8V Gate Threshold Voltage VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=4.5V, VDS=5V 13 ±100 nA 0.7 1 V 51 65 68 85 VGS=2.5V, ID=3A 58 75 mΩ 100 mΩ 1 V 1.5 A VGS=4.5V, ID=3.4A TJ=125°C A RDS(ON) Static Drain-Source On-Resistance VGS=1.8V, ID=2A 68 gFS Forward Transconductance VDS=5V, ID=3.4A 16 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr µA 5 IGSS Crss Units 20 VDS=20V, VGS=0V VGS(th) Coss Max VGS=4.5V, VDS=10V, ID=3.4A mΩ S 205 260 320 pF 33 48 63 pF 16 27 38 pF 1.5 3 4.5 Ω 2.9 3.8 nC 0.4 nC 0.6 nC 2.5 ns VGS=5V, VDS=10V, RL=2.95Ω, RGEN=3Ω 3.2 ns 21 ns IF=3.4A, dI/dt=100A/µs 14 Body Diode Reverse Recovery Charge IF=3.4A, dI/dt=100A/µs 3.8 Body Diode Reverse Recovery Time 3 ns 19 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 4: Sep 2010 www.aosmd.com Page 2 of 9 AO6604 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 16 16 4.5V VDS=5V 2V 2.5V 12 ID(A) ID (A) 12 8 VGS=1.5V 4 8 125°C 4 25°C 0 0 0 1 2 3 4 0 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.6 100 VGS=1.8V 80 VGS=2.5V 60 Normalized On-Resistance 120 RDS(ON) (mΩ Ω) 0.5 VGS=2.5V ID=3A 1.4 VGS=1.8V ID=2A 1.2 17 5 VGS=4.5V 2 ID=3.4A 10 1 VGS=4.5V 40 0.8 0 3 6 9 12 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) -50 120 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=3.4A 1.0E+01 40 100 1.0E+00 80 IS (A) RDS(ON) (mΩ Ω) -25 125°C 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 60 25°C 1.0E-04 40 1.0E-05 0 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 4: Sep 2010 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (NoteE) Page 3 of 9 AO6604 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 5 VDS=10V ID=3.4A 300 Capacitance (pF) VGS (Volts) 4 3 2 Ciss 200 Coss 100 1 Crss 0 0 0 1 2 3 Qg (nC) Figure 7: Gate-Charge Characteristics 0 4 100.0 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 20 1000 TA=25°C 10µs RDS(ON) limited 100 Power (W) ID (Amps) 10.0 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 10 10s DC 1 0.0 0.01 0.1 1 VDS (Volts) 10 100 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=150°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 Rev 4: Sep 2010 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 100 1000 Page 4 of 9 AO6604 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 4: Sep 2010 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 9 AO6604 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V VDS=-20V, VGS=0V -20 IGSS Gate-Body leakage current VDS=0V, VGS= ±8V Gate Threshold Voltage ID(ON) On state drain current VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-2.5A Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current Output Capacitance Reverse Transfer Capacitance Rg Gate resistance V VGS=-2.5V, ID=-2A VGS=-1.8V, ID=-1A VDS=-5V, ID=-2.5A IS=-1A,VGS=0V ±100 nA -0.65 -1 V 56 75 80 105 70 95 mΩ 85 115 mΩ A mΩ 13 -0.7 560 VGS=0V, VDS=-10V, f=1MHz S -1 V -1.5 A 745 pF 80 pF 70 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge VGS=-4.5V, VDS=-10V, ID=-2.5A 23 Ω 8.5 11 nC Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-2.5A, dI/dt=100A/µs 37 Qrr Body Diode Reverse Recovery Charge IF=-2.5A, dI/dt=100A/µs 27 VGS=-4.5V, VDS=-10V, RL=4Ω, RGEN=6Ω pF 15 Qgs Body Diode Reverse Recovery Time µA -13 DYNAMIC PARAMETERS Ciss Input Capacitance Crss Units -5 -0.4 TJ=125°C RDS(ON) Max -1 TJ=55°C VGS(th) Coss Typ 1.2 nC 2.1 nC 7.2 ns 36 ns 53 ns 56 ns 49 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 4: Sep 2010 www.aosmd.com Page 6 of 9 AO6604 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 25 VDS=-5V -4V -3V -4.5V 20 -3.5V 15 -2.5V -ID(A) -ID (A) 15 10 125°C 10 -2V 5 25°C 5 VGS=-1.5V 0 0 0 1 2 3 4 0 5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1.5 2 2.5 3 VGS=-1.8V 110 VGS=-2.5V 90 70 VGS=-4.5V Normalized On-Resistance 1.6 130 RDS(ON) (mΩ Ω) 1 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 150 50 VGS=-2.5V ID=-2A 1.4 17 VGS=-4.5V 5 ID=-2.5A 1.2 VGS=-1.8V ID=-1A 1 2 10 0.8 0 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 2 4 0 180 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=-2.5A 160 1.0E+01 40 140 1.0E+00 120 1.0E-01 100 -IS (A) RDS(ON) (mΩ Ω) 0.5 125°C 80 125°C 1.0E-02 25°C 1.0E-03 25°C 60 1.0E-04 40 1.0E-05 0 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 4: Sep 2010 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 9 AO6604 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=-10V ID=-2.5A 1200 Capacitance (pF) -VGS (Volts) 4 3 2 1000 800 Ciss 600 400 Coss 1 200 Crss 0 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 0 10 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 20 1000 100.0 TA=25°C 10µs RDS(ON) limited 100 Power (W) -ID (Amps) 10.0 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 10 10s DC 0.0 1 0.01 0.1 1 -VDS (Volts) 10 100 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=150°C/W 0.1 PD Single Pulse 0.01 Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 4: Sep 2010 www.aosmd.com Page 8 of 9 AO6604 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 4: Sep 2010 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 9 of 9