AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications. N-Channel VDS= 40V P-Channel -40V ID= 8A (VGS=10V) -7A (VGS=-10V) RDS(ON) RDS(ON) < 19mΩ (VGS=10V) < 23mΩ (VGS=-10V) < 27mΩ (VGS=4.5V) < 30mΩ (VGS=-4.5V) 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested SOIC-8 Top View D2 D1 Bottom View Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S1 S2 n-channel Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel VDS Drain-Source Voltage 40 Gate-Source Voltage VGS TA=25°C Continuous Drain Current ID TA=70°C p-channel Max p-channel -40 Units V ±20 ±20 V 8 -7 A 6 -5.5 IDM 40 -35 Avalanche Current C IAS 15 -35 A Avalanche energy L=0.1mH C TA=25°C EAS 11 61 mJ Pulsed Drain Current Power Dissipation B C PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.1. 0: August 2013 Steady-State Steady-State 2 1.3 TJ, TSTG Symbol t ≤ 10s 2 1.3 RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 W °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 9 AO4618 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8A TJ=125°C VGS=4.5V, ID=4A gFS Forward Transconductance VDS=5V, ID=8A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd VGS=10V, VDS=20V, ID=8A µA 5 1.4 1 Units V 1 TJ=55°C VGS(th) Max 40 VDS=40V, VGS=0V IGSS Coss Typ 1.9 ±100 nA 2.4 V 15.4 19 22.5 29 21 27 mΩ 1 V 2.5 A 33 0.75 mΩ S 415 pF 112 pF 11 pF 2.2 3.5 Ω 6.5 12 nC 3 6 nC 1.2 nC Gate Drain Charge 1.1 nC tD(on) Turn-On DelayTime 4 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr IF=8A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs Qrr VGS=10V, VDS=20V, RL=2.5Ω, RGEN=3Ω 3 ns 15 ns 2 ns 12.5 ns nC 3.5 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1. 0: August 2013 www.aosmd.com Page 2 of 9 AO4618 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 VDS=5V 4.5V 25 16 10V 3.5V 20 ID(A) ID (A) 12 15 8 10 125°C 3V 4 5 25°C VGS=2.5V 0 0 0 1 2 3 4 5 0 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.8 Normalized On-Resistance 30 VGS=4.5V 25 RDS(ON) (mΩ Ω) 1 20 15 VGS=10V 10 VGS=10V ID=8A 1.6 1.4 17 5 VGS=4.5V 2 ID=4A 10 1.2 1 0.8 0 3 6 9 12 15 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 50 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=8A 45 1.0E+01 40 1.0E+00 35 30 IS (A) RDS(ON) (mΩ Ω) 40 125°C 1.0E-01 125°C 1.0E-02 25 25°C 1.0E-03 20 15 1.0E-04 25°C 10 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1. 0: August 2013 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 9 AO4618 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 500 10 VDS=20V ID=8A 400 Ciss Capacitance (pF) VGS (Volts) 8 6 4 300 200 Coss 2 100 0 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 0 8 100.0 Crss 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 TA=25°C 10µs RDS(ON) limited 100 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 Power (W) ID (Amps) 10.0 10 10s DC 1 0.0 0.01 0.1 1 VDS (Volts) 10 100 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=90°C/W 0.1 PD 0.01 Ton T 0.001 0.00001 Rev.1. 0: August 2013 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 100 1000 Page 4 of 9 AO4618 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1. 0: August 2013 Vgs Isd L + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 9 AO4618 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V VDS=-40V, VGS=0V -40 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=-250µA VGS=-10V, ID=-7A gFS Forward Transconductance VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current VGS=-4.5V, ID=-4A VDS=-5V, ID=-7A IS=-1A,VGS=0V DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units V VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz µA -5 -1.7 TJ=125°C Static Drain-Source On-Resistance Max -1 TJ=55°C RDS(ON) Coss Typ ±100 nA -1.9 -3 V 19 23 28.5 35 24 30 mΩ mΩ 26 -0.74 S -1 V -2.5 A 1870 pF 185 pF 155 pF 4.5 Ω 9 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 32 45 nC Qg(4.5V) Total Gate Charge 8 12 nC VGS=10V, VDS=-20V, ID=-7A Qgs Gate Source Charge 7.6 nC Qgd Gate Drain Charge 6.2 nC tD(on) Turn-On DelayTime 10 ns tr Turn-On Rise Time 18 ns tD(off) Turn-Off DelayTime 38 ns tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=-20V, RL=2.8Ω, RGEN=3Ω 24 ns IF=-7A, dI/dt=500A/µs 13 Body Diode Reverse Recovery Charge IF=-7A, dI/dt=500A/µs 33 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1. 0: August 2013 www.aosmd.com Page 6 of 9 AO4618 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 50 -10V VDS=-5V -4.5V -7V 40 30 -3.5V -ID(A) -ID (A) 30 20 20 125°C 10 10 25°C VGS=-3V 0 0 0 1 2 3 4 0 5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 40 Normalized On-Resistance 1.8 35 RDS(ON) (mΩ Ω) 1 30 VGS=-4.5V 25 VGS=-10V 20 15 10 VGS=-10V ID=-7A 1.6 1.4 1.2 VGS=-4.5V ID=-4A 1 0.8 0 5 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 60 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 ID=-7A 1.0E+01 50 125°C -IS (A) RDS(ON) (mΩ Ω) 1.0E+00 40 125°C 30 1.0E-01 25°C 1.0E-02 1.0E-03 25°C 20 1.0E-04 10 1.0E-05 2 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1. 0: August 2013 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 9 AO4618 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3000 VDS=-15V ID=-7A 2500 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 2000 1500 1000 Coss 2 500 0 0 Crss 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 0 35 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 100.0 TA=25°C 10µs RDS(ON) limited 100 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 Power (W) -ID (Amps) 10.0 10 10s DC 0.0 1 0.01 0.1 1 -VDS (Volts) 10 100 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=90°C/W 0.1 PD 0.01 Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1. 0: August 2013 www.aosmd.com Page 8 of 9 AO4618 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1. 0: August 2013 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 9 of 9