AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications. N-Channel VDS= 30V P-Channel -30V ID= 8A (VGS=10V) -7A (VGS=-10V) RDS(ON) RDS(ON) < 20mΩ (VGS=10V) < 22mΩ (VGS=-10V) < 28mΩ (VGS=4.5V) < 40mΩ (VGS=-4.5V) 100% UIS Tested 100% Rg Tested ESD Protected 100% UIS Tested 100% Rg Tested SOIC-8 Top View D2 D1 Bottom View Top View S2 G2 S1 G1 D2 D2 D1 D1 G2 G1 S1 S2 n-channel Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS TA=25°C Continuous Drain Current ID TA=70°C p-channel Max p-channel -30 Units V ±20 ±20 V 8 -7 A 6.5 -6 IDM 40 -40 Avalanche Current C IAS, IAR 19 27 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 18 36 mJ Pulsed Drain Current Power Dissipation B C PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 2: Jan. 2011 Steady-State Steady-State 2 1.3 TJ, TSTG Symbol t ≤ 10s 2 1.3 RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 W °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 9 AO4616 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V V Gate-Body leakage current VDS=0V, VGS=±16V Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 40 VGS=10V, ID=8A TJ=125°C VGS=4.5V, ID=6A 10 µA 1.8 2.4 V 16.5 20 23 28 19.5 28 mΩ 1 V 2.5 A A gFS Forward Transconductance VDS=5V, ID=8A 30 VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 IGSS Coss Units 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ mΩ S 600 740 888 pF VGS=0V, VDS=15V, f=1MHz 77 110 145 pF 50 82 115 pF VGS=0V, VDS=0V, f=1MHz 0.5 1.1 1.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12 15 18 nC Qg(4.5V) Total Gate Charge 6 7.5 9 nC VGS=10V, VDS=15V, ID=8A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs 6 8 10 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs 14 18 22 VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω Turn-Off Fall Time 2.5 nC 3 nC 5 ns 3.5 ns 19 ns 3.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: Jan. 2011 www.aosmd.com Page 2 of 9 AO4616 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 VDS=5V 4V 25 25 3.5V 10V 20 3V ID(A) ID (A) 20 15 15 10 10 125°C 5 5 25°C VGS=2.5V 0 0 0 1 2 3 4 1 5 1.5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.6 Normalized On-Resistance 30 25 RDS(ON) (mΩ ) 2 VGS=4.5V 20 15 VGS=10V 10 VGS=4.5V ID=6A 1.4 1.2 VGS=10V ID=8A 1 17 5 2 10 0.8 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 40 25 50 1.0E+02 ID=8A 1.0E+01 35 40 1.0E+00 125°C IS (A) RDS(ON) (mΩ ) 30 25 25°C 1.0E-01 125°C 1.0E-02 25°C 20 1.0E-03 15 1.0E-04 10 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 2: Jan. 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 9 AO4616 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=15V ID=8A 1000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 800 600 400 Coss 2 200 0 0 0 3 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics 0 15 100.0 Crss 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 TA=25°C 10µs RDS(ON) limited 100 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 0.1 1 10 10s DC 0.0 0.01 Power (W) ID (Amps) 10.0 10 100 1 0.00001 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=90°C/W 0.1 PD 0.01 Ton T 0.001 0.00001 Rev 2: Jan. 2011 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 100 1000 Page 4 of 9 AO4616 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 2: Jan. 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 9 AO4616 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V VDS=-30V, VGS=0V -30 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage ID(ON) On state drain current VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-7A RDS(ON) -1.4 Forward Transconductance Diode Forward Voltage IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance V µA 100 nA -2.0 -2.5 V 17.5 22 24.5 33 27.5 40 -40 VGS=-4.5V, ID=-3.5A VDS=-5V, ID=-7A IS=-1A,VGS=0V gFS Units -5 TJ=125°C Static Drain-Source On-Resistance Max -1 TJ=55°C VSD Coss Typ VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz A mΩ mΩ 24 -0.75 S -1 V -2.5 A 830 1040 1250 pF 125 180 235 pF 75 125 175 pF 2 4 6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 15 19 23 nC Qg(4.5V) Total Gate Charge 7.5 9.6 12 nC VGS=10V, VDS=-15V, ID=-7A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=-7A, dI/dt=500A/µs Body Diode Reverse Recovery Time 3.6 nC 4.6 nC 10 ns VGS=10V, VDS=-15V, RL=2.2Ω, RGEN=3Ω 5.5 ns 26 ns IF=-7A, dI/dt=500A/µs 11.5 15 25 32.5 9 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: Jan. 2011 www.aosmd.com Page 6 of 9 AO4616 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 60 -10V VDS=-5V -7V -5V 50 30 40 -ID(A) -ID (A) -4.5V 30 20 125°C 20 -3.5V 10 25°C 10 VGS=-3V 0 0 0 1 2 3 4 0 5 1 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 40 Normalized On-Resistance 1.6 35 RDS(ON) (mΩ ) 2 VGS=-4.5V 30 25 VGS=-10V 20 15 10 VGS=-10V ID=-7A 1.4 17 5 2 VGS=-4.5V 10 I =-3.5A 1.2 1 D 0.8 0 5 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 60 ID=-7A 1.0E+01 50 40 125°C 40 -IS (A) RDS(ON) (mΩ ) 1.0E+00 125°C 30 1.0E-01 25°C 1.0E-02 1.0E-03 25°C 20 1.0E-04 10 1.0E-05 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 2: Jan. 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 9 AO4616 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 VDS=-15V ID=-7A 1400 1200 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 1000 800 600 Coss 400 2 200 Crss 0 0 0 5 15 Qg 10 (nC) Figure 7: Gate-Charge Characteristics 0 20 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 100.0 TA=25°C 10µs RDS(ON) limited 100 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 0.1 1 10 10s DC 0.0 0.01 Power (W) -ID (Amps) 10.0 10 100 1 0.00001 -VDS (Volts) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 2: Jan. 2011 www.aosmd.com Page 8 of 9 AO4616 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 2: Jan. 2011 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 9 of 9