AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET General Description Product Summary The AOT266L & AOB266L & AOTF266L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 60V 140A/78A RDS(ON) (at VGS=10V) < 3.5mΩ (< 3.2mΩ∗) RDS(ON) (at VGS=6V) < 4.0mΩ (< 3.8mΩ∗) 100% UIS Tested 100% Rg Tested Top View TO-220 TO-263 D2PAK TO-220F D G D S G AOT266L D AOTF266L S G D AOB266L S S G Orderable Part Number Package Type Form Minimum Order Quantity AOT266L AOTF266L AOB266L TO220 Green TO220F Green TO263 Green Tube Tube Tape & Reel 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT266L/AOB266L Drain-Source Voltage VDS 60 Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current ±20 140 ID TC=100°C C V 55 A 450 18 IDSM TA=70°C Units V 78 110 IDM TA=25°C AOTF266L A 14 Avalanche Current C IAS 90 A Avalanche energy L=0.1mH C EAS 405 mJ TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C PD TA=25°C 45.5 134 22.5 2.1 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 268 Symbol t ≤ 10s Steady-State Steady-State W 1.3 TJ, TSTG RθJA RθJC -55 to 175 AOT266L/AOB266L 15 60 0.56 W °C AOTF266L 15 60 3.3 Units °C/W °C/W °C/W * Surface mount package TO263 Rev.4.0: September 2013 www.aosmd.com Page 1 of 7 AOT266L/AOB266L/AOTF266L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS，ID=250µA 5 2.2 VGS=10V, ID=20A TO220/TO220F TJ=125°C VGS=6V, ID=20A TO220/TO220F VGS=10V, ID=20A Static Drain-Source On-Resistance TO263 VGS=6V, ID=20A gFS Forward Transconductance TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd Gate Drain Charge nA 3.2 V 2.9 3.5 4.9 5.9 3.2 4 mΩ 2.6 3.2 mΩ 3 3.8 mΩ 1 V 140 A VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=20A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=30V, RL=1.5Ω, Ω RGEN=3Ω 0.4 mΩ S 5650 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs ±100 80 VGS=0V, VDS=30V, f=1MHz µA 2.7 0.65 DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 TJ=55°C VGS(th) Max 60 VDS=60V, VGS=0V IGSS RDS(ON) Typ pF 720 pF 20 pF 0.9 1.4 Ω 65 90 nC 20 nC 7 nC 21 ns 20 ns 36 ns 6 ns IF=20A, dI/dt=500A/µs 27 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 145 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.4.0: September 2013 www.aosmd.com Page 2 of 7 AOT266L/AOB266L/AOTF266L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 VDS=5V 4.5V 6V 80 80 10V 60 ID(A) ID (A) 60 4V 125°C 40 40 20 20 25°C VGS=3.5V 0 0 0 1 2 3 4 2 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 8 3 3.5 4 4.5 5 5.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 6 Normalized On-Resistance 2.2 6 RDS(ON) (mΩ Ω) 2.5 VGS=6V 4 2 VGS=10V 2 VGS=10V ID=20A 1.8 17 5 2 VGS=6V 10 1.6 1.4 1.2 ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 8 1.0E+02 ID=20A 1.0E+01 1.0E+00 IS (A) RDS(ON) (mΩ Ω) 40 125°C 6 4 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 25°C 2 1.0E-04 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.4.0: September 2013 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOT266L/AOB266L/AOTF266L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8000 10 VDS=30V ID=20A 7000 Ciss 8 Capacitance (pF) VGS (Volts) 6000 6 4 5000 4000 Coss 3000 2000 2 1000 0 0 10 20 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 70 0 10µs 10µs 100µs RDS(ON) limited 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 60 1ms 10ms 10.0 DC 1.0 TJ(Max)=175°C TC=25°C 0.1 TJ(Max)=175°C TC=25°C 500 Power (W) 100.0 10 600 1000.0 ID (Amps) Crss 0 17 5 2 10 400 300 200 0.0 100 0.01 0.1 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT266L and AOB266L (Note F) 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case for AOT266L and AOB266L (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=0.56°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT266L and AOB266L (Note F) Rev.4.0: September 2013 www.aosmd.com Page 4 of 7 AOT266L/AOB266L/AOTF266L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 1000.0 100µs 1ms 10ms 10.0 1.0 DC TJ(Max)=175°C TC=25°C 0.1 TJ(Max)=175°C TC=25°C 500 Power (W) ID (Amps) 100.0 10µs RDS(ON) limited 400 300 200 100 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.001 0.01 0.1 1 10 100 1000 17 Pulse Width (s) Figure 13: Single Pulse Power Rating Junction-to-Case 5 for AOTF266L (Note F) Figure 12: Maximum Forward Biased Safe Operating Area for AOTF266L (Note F) 2 10 Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=3.3°C/W 1 0 18 0.1 PD Single Pulse Ton 0.01 1E-05 T 40 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF266L (Note F) Rev.4.0: September 2013 www.aosmd.com Page 5 of 7 AOT266L/AOB266L/AOTF266L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C 100 TA=150°C TA=125°C 250 200 150 100 50 10 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 15: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 TCASE (° °C) Figure 16: Power De-rating (Note F) 175 1000 150 TA=25°C 100 Power (W) Current rating ID(A) 120 90 60 17 5 2 10 10 30 0 1 0 25 50 75 100 125 150 TCASE (° °C) Figure 17: Current De-rating (Note F) 175 0 0.1 10 1000 18 Pulse Width (s) Figure 18: Single Pulse Power Rating Junction-toAmbient (Note H) 0.001 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 19: Normalized Maximum Transient Thermal Impedance (Note H) Rev.4.0: September 2013 www.aosmd.com Page 6 of 7 AOT266L/AOB266L/AOTF266L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev.4.0: September 2013 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7