AOD450 200V N-Channel MOSFET General Description Product Summary The AOD450 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in inverter, load switching and general purpose applications. VDS ID (at VGS=10V) 200V 3.8A RDS(ON) (at VGS=10V) < 0.70Ω 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D Bottom View D D S G G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C Units V ±30 V 3.8 ID TC=100°C Maximum 200 2.7 A Pulsed Drain Current C IDM 10 Avalanche Current C IAS 3 A Avalanche energy L=1.35mH C TC=25°C EAS 6 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C 2.1 Steady-State Steady-State RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s W 12.5 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case 25 PD -55 to 175 Typ 17.1 50 4 °C Max 30 60 6 Units °C/W °C/W °C/W Rev. 2.0 June 2013 www.aosmd.com Page 1 of 6 AOD450 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=10mA, VGS=0V 200 Typ 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=15V, ID=3.8A 8.7 VSD Diode Forward Voltage IS=1A,VGS=0V 0.8 IS Maximum Body-Diode Continuous Current G TJ=55°C VGS=10V, ID=3.8A TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance 170 VGS=0V, VDS=25V, f=1MHz µA 5 3 Units V VDS=160V, VGS=0V IDSS Crss Max ±100 nA 6 V 0.55 0.7 1.1 1.32 Ω 5 215 S 1 V 6 A 260 pF 20 32 50 pF 3 7.2 15 pF 5.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 3.82 nC Qg(4.5V) Total Gate Charge 0.92 nC Qgs Gate Source Charge 1.42 nC Qgd Gate Drain Charge 1.47 nC tD(on) Turn-On DelayTime 6.3 ns tr Turn-On Rise Time 3.3 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=25V, ID=3.8A VGS=10V, VDS=25V, RL=6.5Ω, RGEN=3Ω 10.5 ns 2.8 ns IF=3.8A, dI/dt=100A/µs 59 Body Diode Reverse Recovery Charge IF=3.8A, dI/dt=100A/µs 142 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev. 2.0 June 2013 www.aosmd.com Page 2 of 6 AOD450 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 14 100 VDS=15V 12 10V 10 10 ID(A) ID (A) 1 8V 8 6 0.1 4 125°C 7V 25°C 0.01 2 VGS=6V 0.001 0 0 5 10 15 2 20 800 6 8 10 Normalized On-Resistance 2.4 700 600 RDS(ON) (mΩ Ω) 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 500 VGS=10V 400 300 2.2 2 17 5 2 10 VGS=10V, ID=3.8A 1.8 1.6 1.4 1.2 1 0.8 200 0 1 2 0 3 4 5 6 7 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 0150 175 Temperature (°C) 18 Figure 4: On-Resistance vs. Junction Temperature (Note E) 1400 1.0E+02 ID=3.8A 1.0E+01 40 1200 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 1000 800 600 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 25°C 400 1.0E-04 1.0E-05 200 6 8 12 14 16 18 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev. 2.0 June 2013 10 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOD450 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 300 VDS=25V ID=3.8A 250 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 150 Coss 100 50 0 Crss 0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 5 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 200 100.0 10µs 10.0 TJ(Max)=175°C TC=25°C 160 17 5 2 10 10µs RDS(ON) limited 1.0 100µs 0.1 1ms 10ms TJ(Max)=175°C TC=25°C DC Power (W) ID (Amps) 200 120 80 40 0.0 0 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.01 0 181 0.1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=6°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev. 2.0 June 2013 www.aosmd.com Page 4 of 6 AOD450 5 30 4 25 Power Dissipation (W) IAR (A) Peak Avalanche Current TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 TA=25°C 2 1 20 15 10 5 0 0 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 5 10000 4 1000 50 175 TA=25°C Power (W) Current rating ID(A) 0.000001 3 2 17 5 2 10 100 10 1 1 0 1E-05 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 10 0 1000 18 175 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 40 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev. 2.0 June 2013 www.aosmd.com Page 5 of 6 AOD450 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev. 2.0 June 2013 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6