AOT2618L/AOB2618L/AOTF2618L 60V N-Channel MOSFET General Description Product Summary The AOT2618L & AOB2618L & AOTF2618L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 60V 23A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 19mΩ RDS(ON) (at VGS=4.5V) < 25mΩ 100% UIS Tested 100% Rg Tested Top View TO-220 TO-263 D2PAK TO-220F D D G G AOT2618L D S AOTF2618L G D Gate-Source Voltage VGS TC=25°C Pulsed Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 0 : July 2012 7 Steady-State Steady-State A 23 A EAS 26 mJ 41.5 23.5 20.5 11.5 2.1 TJ, TSTG RθJA RθJC -55 to 175 AOT2618L/AOB2618L 15 60 3.6 www.aosmd.com W W 1.3 Symbol t ≤ 10s A IAS PDSM Junction and Storage Temperature Range 16 5.5 PD TA=25°C V 70 IDSM TA=70°C Units V 22 18 IDM TA=25°C Continuous Drain Current AOTF2618L G ±20 23 ID TC=100°C C S AOB2618L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT2618L/AOB2618L Symbol Drain-Source Voltage VDS 60 Continuous Drain Current G S S °C AOTF2618L 15 60 6.4 Units °C/W °C/W °C/W Page 1 of 7 AOT2618L/AOB2618L/AOTF2618L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS，ID=250µA 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 70 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA ±100 nA 1.95 2.5 V 15.8 19 29.3 35.5 19.5 25 mΩ S 1 V 23 A A 45 0.72 DYNAMIC PARAMETERS Ciss Input Capacitance Coss V 5 IGSS gFS Units 1 TJ=55°C Static Drain-Source On-Resistance Max 60 VDS=60V, VGS=0V VGS(th) RDS(ON) Typ VGS=0V, VDS=30V, f=1MHz 950 pF 108 pF 7 VGS=0V, VDS=0V, f=1MHz 1 mΩ 2 pF Ω 3 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 14 20 nC Qg(4.5V) Total Gate Charge 6 10 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=30V, ID=20A VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω 3 nC 1.6 nC 7.5 ns 31 ns 18 ns tf Turn-Off Fall Time 40 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 20 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 70 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : July 2012 www.aosmd.com Page 2 of 7 AOT2618L/AOB2618L/AOTF2618L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 10V VDS=5V 4V 40 40 4.5V 30 30 ID(A) ID (A) 3.5V 125°C 20 20 10 10 25°C Vgs=3.0V 0 0 0 1 2 3 4 1 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 30 3 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 5 Normalized On-Resistance 2.6 25 RDS(ON) (mΩ Ω) 2 VGS=4.5V 20 15 VGS=10V 2.4 2.2 VGS=10V ID=20A 2 17 5 2 10 1.8 1.6 1.4 VGS=4.5V ID=20A 1.2 1 0.8 10 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 50 1.0E+01 ID=20A 1.0E+00 40 40 125°C 1.0E-01 30 IS (A) RDS(ON) (mΩ Ω) 125°C 1.0E-02 20 25°C 1.0E-03 25°C 10 1.0E-04 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0 : July 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOT2618L/AOB2618L/AOTF2618L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=30V ID=20A Capacitance (pF) VGS (Volts) Ciss 1000 8 6 4 2 800 600 Coss 400 200 Crss 0 0 0 3 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics 15 0 60 200 1000.0 TJ(Max)=175°C TC=25°C 10µs 10µs RDS(ON) 10.0 100µs 1ms 10ms DC 1.0 TJ(Max)=175°C TC=25°C 0.1 150 Power (W) 100.0 ID (Amps) 10 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 17 5 2 10 100 50 0.0 0 0.01 0.1 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT2618L and AOB2618L (Note F) 0.0001 0.001 0.01 0.1 1 10 0 100 1000 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case for AOT2618L and AOB2618L (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=3.6°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT2618L and AOB2618L (Note F) Rev 0 : July 2012 www.aosmd.com Page 4 of 7 AOT2618L/AOB2618L/AOTF2618L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 1000.0 100.0 10µs RDS(ON) 10.0 100µs Power (W) ID (Amps) TJ(Max)=175°C TC=25°C 250 1ms 10ms DC 1.0 200 150 100 TJ(Max)=175°C TC=25°C 0.1 50 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 17 Pulse Width (s) Figure 13: Single Pulse Power Rating Junction-to-Case 5 for AOTF2618L (Note F) Figure 12: Maximum Forward Biased Safe Operating Area for AOTF2618L 2 10 Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=6.4°C/W 1 0 18 0.1 PD Single Pulse Ton 0.01 1E-05 T 40 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF2618L (Note F) Rev 0 : July 2012 www.aosmd.com Page 5 of 7 AOT2618L/AOB2618L/AOTF2618L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 TA=25°C TA=100°C TA=150°C 10 Power Dissipation (W) IAR (A) Peak Avalanche Current 100 TA=125°C 1 40 30 20 10 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 15: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 TCASE (° °C) Figure 16: Power De-rating (Note F) 175 1000 25 TA=25°C 100 Power (W) Current rating ID(A) 20 15 10 17 5 2 10 10 5 0 1 0 25 50 75 100 125 150 TCASE (° °C) Figure 17: Current De-rating (Note F) 175 0100 0.1 1 10 1000 18 Pulse Width (s) Figure 18: Single Pulse Power Rating Junction-toAmbient (Note H) 0.001 0.01 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 19: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0 : July 2012 www.aosmd.com Page 6 of 7 AOT2618L/AOB2618L/AOTF2618L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0 : July 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7