Datasheet

AON7280
80V N-Channel MOSFET
General Description
Product Summary
The AON7280 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON), Ciss and Coss. This device is
ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
VDS
ID (at VGS=10V)
80V
50A
RDS(ON) (at VGS=10V)
< 8.5mΩ
RDS(ON) (at VGS=6V)
< 12mΩ
100% UIS Tested
100% Rg Tested
DFN 3.3x3.3 EP
Bottom View
Top View
D
Top View
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
C
Avalanche Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation
B
TC=100°C
Power Dissipation
A
TA=70°C
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Rev 0: Dec. 2012
IAS
35
A
EAS
61
mJ
83
Steady-State
Steady-State
W
33
6.3
RθJA
RθJC
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W
4
TJ, TSTG
Symbol
t ≤ 10s
A
15
PDSM
Junction and Storage Temperature Range
A
20
PD
TA=25°C
V
160
IDSM
TA=70°C
±20
39
IDM
TA=25°C
Continuous Drain
Current
Units
V
50
ID
TC=100°C
Maximum
80
°C
-55 to 150
Typ
16
45
1
Max
20
55
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7280
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250uA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
160
TJ=55°C
±100
nA
2.8
3.4
V
6.8
8.5
11.8
14.8
VGS=6V, ID=16A
8.7
12
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=20A
50
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=40V, f=1MHz
Gate Source Charge
VGS=10V, VDS=40V, ID=20A
0.6
mΩ
mΩ
S
1
V
50
A
1871
pF
265
pF
14
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Qgs
µA
5
VGS=10V, ID=20A
Output Capacitance
Units
V
1
Zero Gate Voltage Drain Current
Coss
Max
80
VDS=80V, VGS=0V
IDSS
RDS(ON)
Typ
pF
1.3
2.0
26.5
38
Ω
nC
8.5
nC
Qgd
Gate Drain Charge
4
nC
tD(on)
Turn-On DelayTime
11.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=40V, RL=2Ω,
RGEN=3Ω
8.5
ns
21.5
ns
5.5
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/us
32
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/us
162
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Dec. 2012
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Page 2 of 6
AON7280
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
100
6V
VDS=5V
80
80
8V
5V
60
-ID(A)
-ID (A)
60
4.5V
40
40
125°C
20
20
VGS=4V
25°C
0
0
0
1
2
3
4
5
1
3
4
5
6
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
12
Normalized On-Resistance
2.2
10
RDS(ON) (mΩ
Ω)
2
VGS=6V
8
VGS=10V
6
4
2
2
VGS=10V
ID=20A
1.8
1.6
1.4
VGS=6V
ID=16A
1.2
17
5
2
10
1
0.8
0
0
5
0
10
15
20
25
30
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
1.0E+02
25
ID=20A
RDS(ON) (mΩ
Ω)
125°C
15
-IS (A)
1.0E+01
20
40
1.0E+00
125°C
1.0E-01
1.0E-02
10
25°C
1.0E-03
5
25°C
0
1.0E-04
1.0E-05
0
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Dec. 2012
2
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON7280
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
VDS=40V
ID=20A
Ciss
2000
Capacitance (pF)
-VGS (Volts)
8
6
4
1500
Coss
1000
2
500
Crss
0
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
0
10
20
30
40
50
60
70
-VDS (Volts)
Figure 8: Capacitance Characteristics
400
1000.0
TJ(Max)=150°C
TC=25°C
350
10µs
10µs
RDS(ON)
limited
10.0
100µs
1.0
1ms
10ms
DC
300
Power (W)
100.0
-ID (Amps)
80
TJ(Max)=150°C
TC=25°C
0.1
250
17
5
2
10
200
150
100
50
0.0
0
0.01
0.1
1
10
-VDS (Volts)
100
1000
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18Junction-to-Case
Figure 10: Single Pulse Power Rating
(Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Dec. 2012
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Page 4 of 6
AON7280
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
Power Dissipation (W)
-IAR (A) Peak Avalanche Current
1000
TA=25°C
100
TA=100°C
TA=150°C
10
TA=125°C
1
80
60
40
20
0
1
10
100
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
1000
0
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
60
TA=25°C
50
1000
40
Power (W)
-Current rating ID(A)
150
30
17
5
2
10
100
20
10
10
1
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
1E-05
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Dec. 2012
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Page 5 of 6
AON7280
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: Dec. 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6