Datasheet

AO4423
30V P-Channel MOSFET
General Description
Product Summary
The AO4423 uses advanced trench technology to provide
excellent RDS(ON), and ultra-low low gate charge with a
25V gate rating. This device is suitable for use as a load
switch or in PWM applications.
VDS (V) = -30V
ID = -17A
RDS(ON) < 6.2mΩ
RDS(ON) < 7.2mΩ
* RoHS and Halogen-Free Compliant
ESD Protected
100% UIS tested
100% Rg tested (note *)
(VGS = -20V)
(VGS = -20V)
(VGS = -10V)
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current AF
TA=70°C
TA=25°C
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient AF
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Rev.11.0 June 2013
Units
V
VGS
±25
V
ID
-14
IDM
-182
TA=25°C
Pulsed Drain Current B
Power Dissipation A
Maximum
-30
-17
3.1
PD
W
2
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
RθJA
RθJL
Typ
26
50
14
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
Conditions
Min
ID=-250µA, VGS=0V
-30
Typ
-1
TJ=55°C
-5
±1
µA
VDS=0V, VGS=±25V
±10
µA
-2.6
V
VGS(th)
Gate Threshold Voltage
On state drain current
VGS=-10V, VDS=-5V
-1.5
-182
VGS=-20V, ID=-15A
-2.1
A
5.1
6.2
7.4
9
VGS=-10V, ID=-15A
5.9
7.2
mΩ
9.5
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=-6V, ID=-10A
7.5
gFS
Forward Transconductance
VDS=-5V, ID=-15A
48
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
-0.71
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
2527
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
µA
VDS=0V, VGS=±20V
ID(ON)
Crss
Units
V
VDS=-30V, VGS=0V
VDS=VGS ID=-250µA
Coss
Max
VGS=-10V, VDS=-15V, ID=-15A
VGS=-10V, VDS=-15V, RL=1.0Ω,
RGEN=3Ω
IF=-15A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs
S
-1
V
-4.2
A
3033
pF
583
2.1
mΩ
pF
397
556
pF
4.3
6.4
Ω
47
57
nC
8
nC
14
nC
12
ns
8
ns
54
ns
87
ns
26.1
32
12.3
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Note *: This device is guaranteed RG 100% tested after date code 8V11 (Jan 1st 2008)
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Rev.11.0 June 2013
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
50
-4.5V
VDS=-5V
-4V
-10V
40
40
-6V
125°C
30
-ID(A)
-ID (A)
30
20
25°C
20
-3.5V
10
10
VGS=-3V
0
0
0
1
2
3
4
5
2
3
3.5
4
4.5
5
1.7
Normalized On-Resistance
RDS(ON) (mΩ
Ω)
10
VGS=-6V
8
VGS=-10V
6
VGS=-20V
1.6
VGS=-20V
ID = -15A
1.5
VGS=-10V
ID = -15A
1.4
1.3
1.2
VGS=-6V
ID = -10A
1.1
1.0
0.9
4
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-15
1.0E+01
16
-12.8
ID=-15A
1.0E+00
14
125°C
1.0E-01
12
-IS (A)
RDS(ON) (mΩ
Ω)
2.5
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
10
125°C
1.0E-02
1.0E-03
8
1.0E-04
6
25°C
1.0E-05
25°C
4
4
8
12
16
20
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev.11.0 June 2013
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4000
10
3000
Capacitance (pF)
-VGS (Volts)
3500
VDS=-15V
ID=-15A
8
6
4
Ciss
2500
2000
1500
Coss
1000
2
500
0
10
20
30
40
-Qg (nC)
Figure 7: Gate-Charge Characteristics
0
50
10
20
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
100.0
Crss
0
0
10000
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
10µs
1000
Power (W)
-ID (Amps)
100µs
10.0
1ms
10ms
1.0
0.1s
1s
0.1
100
10
10s
DC
TJ(Max)=150°C
TA=25°C
1
0.0
0.1
1
10
0.00001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
-15
Zθ JA Normalized Transient
Thermal Resistance
10
1
0.001
-12.8
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Ton
0.01
Single Pulse
T
0.001
0.00001
0.0001
Rev.11.0 June 2013
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
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G ate C harge Test C ircuit & W aveform
V gs
Qg
-10V
-
-
VDC
+
VDC
Q gs
V ds
Q gd
+
DUT
V gs
Ig
C harge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & W aveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.11.0 June 2013
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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