万和兴电子有限公司 www.whxpcb.com AO4407A 30V P-Channel MOSFET General Description Product Summary The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. VDS = -30V ID = -12A (VGS = -20V) RDS(ON) < 11mΩ (VGS = -20V) RDS(ON) < 13mΩ (VGS = -10V) RDS(ON) < 17mΩ (VGS = -6V) * RoHS and Halogen-Free Complaint 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current A VGS TA=25°C Pulsed Drain Current B Avalanche Current G Repetitive avalanche energy L=0.3mH TA=25°C Power Dissipation A TA=70°C G Junction and Storage Temperature Range Maximum Junction-to-Lead C Rev.11.0 June 2013 Units V ±25 V -12 TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A -30 Maximum ID -10 IDM -60 IAR -26 EAR 101 mJ 3.1 PD W 2.0 TJ, TSTG Symbol t ≤ 10s Steady State Steady State A RθJA RθJL -55 to 150 Typ 32 60 17 Max 40 75 24 °C Units °C/W °C/W °C/W www.aosmd.com 万和兴电子有限公司 www.whxpcb.com Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID = -250µA, VGS = 0V -30 IGSS Gate-Body leakage current VDS = 0V, VGS = ±25V VGS(th) Gate Threshold Voltage VDS = VGS ID = -250µA -1.7 ID(ON) On state drain current VGS = -10V, VDS = -5V -60 TJ = 55°C VGS = -20V, ID = -12A TJ=125°C 21 DYNAMIC PARAMETERS Ciss Input Capacitance Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time -0.7 2060 VGS=0V, VDS=-15V, f=1MHz mΩ S -1 V -3 A 2600 pF 370 pF 295 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgs 11 17 Maximum Body-Diode Continuous Current Reverse Transfer Capacitance 8.5 12.7 IS Gate resistance A VGS = -6V, ID = -10A IS = -1A,VGS = 0V Rg V 13 Diode Forward Voltage Crss nA -3 15 VSD Output Capacitance ±100 10 VDS = -5V, ID = -10A Coss -2.3 11.5 Forward Transconductance µA -5 VGS = -10V, ID = -12A gFS Units -1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max V VDS = -30V, VGS = 0V IDSS RDS(ON) Typ VGS=-10V, VDS=-15V, ID=-12A pF 2.4 3.6 Ω 30 39 nC 4.6 nC Gate Drain Charge 10 nC Turn-On DelayTime 11 ns 9.4 ns 24 ns 12 ns VGS=-10V, VDS=-15V, RL=1.25Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=-12A, dI/dt=100A/µs 30 Qrr Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs 22 40 ns nC A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.11.0 June 2013 www.aosmd.com 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 -10V VDS= -5V -6V 60 -5V -ID(A) -ID (A) 60 -4.5V 40 40 125°C -4V 20 20 25°C VGS= -3.5V 0 0 0 1 2 3 4 5 0 0.5 -VDS (Volts) Figure 1: On-Region Characteristics 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 20 Normalized On On-Resistance 1.8 15 RDS(ON) (mΩ Ω) 1 VGS=-6V 10 VGS=-10V VGS=-20V 5 0 0 4 1.6 1.4 VGS=-10V ID=-12A 1.2 VGS=-6V ID=-10A 1.0 0.8 I12 dI/dt=100A/µs 20 F=-6.5A, 16 8 VGS=-20V ID=-12A 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 1E+01 ID=-12A 1E+00 25 20 -IS (A) RDS(ON) (mΩ Ω) 1E-01 125° 15 125°C 1E-02 1E-03 25°C 1E-04 10 25° 1E-05 5 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev.11.0 June 2013 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 Ciss Capacitance (pF) -VGS (Volts) 2500 VDS=-15V ID=-12A 8 6 4 2 2000 1500 1000 Coss 500 Crss 0 0 0 5 10 15 20 25 30 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 10000 100 10µs 10 1ms 1 10ms RDS(ON) limited 100mss 0.1 TJ(Max)=150°C TA=25°C 100 10 10s DC 0.01 0.1 TJ(Max)=150°C TA=25°C 1000 100µs Power (W) -ID (Amps) 20 1 10 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 100 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Zθ JA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 Rev.11.0 June 2013 0.001 T 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) 100 1000 www.aosmd.com 万和兴电子有限公司 www.whxpcb.com G ate C harge Test C ircuit & W aveform Vgs Qg -10V - - VD C + VD C Q gs Vds Qgd + DUT V gs Ig C harge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.11.0 June 2013 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com