AOS Semiconductor Product Reliability Report AOT410L, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: (408) 830-9742 www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOT410L. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOT410L passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: TM The AOT410L is fabricated with SDMOS trench technology that combines excellent RDS(ON) with low gate charge & low Qrr. The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. -RoHS Compliant -Halogen Free 2 II. Die / Package Information: Process Package Type Lead Frame Die Attach Bond wire Mold Material Flammability Rating Backside Metallization Moisture Level AOT410L Standard sub-micron Low voltage N channel process 3 leads TO220 Bare Cu Soft solder Al 5&20mils Soft solder UL-94 V-0 Ti / Ni / Ag Up to Level 1 * Note * based on info provided by assembler and mold compound supplier III. Result of Reliability Stress for AOT410L Test Item Test Condition Time Point Solder Reflow Precondition HTGB 168hr 85°c /85%RH +3 cycle reflow@260°c Temp = 150°c , Vgs=100% of Vgsmax HTRB HAST Pressure Pot Temp = 150°c , Vds=80% of Vdsmax Lot Attribution Total Sample size - 8 lots 990pcs 0 168hrs 500 hrs 1000 hrs 738pcs 0 8 lots 1 lot 77+5 pcs / lot 738pcs 0 77+5 pcs / lot 275pcs 0 50+5 pcs / lot 275pcs 0 50+5 pcs / lot 440pcs 0 168hrs 500 hrs 1000 hrs 130°c , 85%RH, 33.3 psi, Vgs = 80% of Vgs max 100 hrs 121°c , 29.7psi, RH=100% 96 hrs (Note A*) 2 lots 7 lots (Note A*) 5 lots (Note B**) 5 lots (Note B**) Temperature Cycle -65°c to 150°c , air to air 250 / 500 cycles 8 lots (Note B**) Number of Failures 50+5 pcs / lot 3 III. Result of Reliability Stress for AOT410L Continues DPA Internal Vision Cross-section X-ray CSAM NA 5 5 5 5 5 5 0 NA 5 5 0 Bond Integrity Room Temp 150°c bake 150°c bake 0hr 250hr 500hr 40 40 40 40 wires 40 wires 40 wires 0 Solderability 245°c 5 sec 15 15 leads 0 Note A: The HTGB and HTRB reliability data presents total of available AOT410L burn-in data up to the published date. Note B: The pressure pot, temperature cycle and HAST reliability data for AOT410L comes from the AOS generic package qualification data. IV. Reliability Evaluation FIT rate (per billion): 5 MTTF = 23322 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AOT410L). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 109 / [2x (2x164x168+15x164x500+1x164x1000) x258] = 5 9 8 MTTF = 10 / FIT =2.04 x 10 hrs =23322 years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tjs = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tju =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV/K 4