AOS Semiconductor Product Reliability Report AOT500, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: (408) 830-9742 www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOT500. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOT500 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under over voltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET. The built in resistor guarantees proper clamp operation under all circuit conditions, and the MOSFET never goes into avalanche breakdown. Advanced trench technology provides excellent low Rdson, gate charge and body diode characteristics, making this device ideal for motor and inductive load control applications. Standard Product AOT500 is Pb-free (meets ROHS & Sony 259 specifications). 2 II. Die / Package Information: Process Package Type Lead Frame Die Attach Bond wire Mold Material Flammability Rating Backside Metallization Moisture Level AOT500 Standard sub-micron Low voltage N channel process 3 leads TO220 Cu, Ni pad, Ni lead Soft solder Al 5&15mils Soft solder UL-94 V-0 Ti / Ni / Ag Up to Level 1 * Note * based on info provided by assembler and mold compound supplier III. Result of Reliability Stress for AOT500 Test Item Test Condition Time Point Solder Reflow Precondition HTGB 168hr 85°c /85%RH +3 cycle reflow@260°c Temp = 150°c , Vgs=100% of Vgsmax - 168hrs 500 hrs 1000 hrs Lot Attribution Total Sample size 8 lots 990pcs 0 164pcs 0 77+5 pcs / lot 164pcs 0 77+5 pcs / lot 275pcs 0 50+5 pcs / lot 275pcs 0 50+5 pcs / lot 440pcs 0 2 lots (Note A*) HTRB HAST Pressure Pot 168hrs 500 hrs 1000 hrs 2 lots 130°c , 85%RH, 33.3 psi, Vgs = 80% of Vgs max 100 hrs (Note A*) 5 lots 121°c , 29.7psi, RH=100% 96 hrs Temp = 150°c , Vds=80% of Vdsmax (Note B**) 5 lots (Note B**) Temperature Cycle -65°c to 150°c , air to air 250 / 500 cycles Number of Failures 8 lots (Note B**) 50+5 pcs / lot 3 III. Result of Reliability Stress for AOT500 Continues DPA Internal Vision Cross-section X-ray CSAM NA 5 5 5 5 5 5 0 NA 5 5 0 Bond Integrity Room Temp 150°c bake 150°c bake 0hr 250hr 500hr 40 40 40 40 wires 40 wires 40 wires 0 Solderability 245°c 5 sec 15 15 leads 0 Note A: The HTGB and HTRB reliability data presents total of available AOT500 burn-in data up to the published date. Note B: The pressure pot, temperature cycle and HAST reliability data for AOT500 comes from the AOS generic package qualification data. IV. Reliability Evaluation FIT rate (per billion): 11 MTTF = 10558 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AOT500). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10 9 7 MTTF = 10 / FIT = 9.25 x 10 hrs =10558 years / [2x 2x164x1000x258] = 11 Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tjs = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tju =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV/K 4