AOSMD AO6409AL

AO6409AL
P-Channel Enhancement Mode
Field Effect Transistor
General Description
Product Summary
The AO6409AL uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.8V. This device is suitable
for use as a load switch applications.
Parameter
VDS
ID (at VGS=-4.5V)
-20V
-5.5A
RDS(ON) (at VGS= -4.5V)
< 44mΩ
RDS(ON) (at VGS= -2.5V)
< 53mΩ
RDS(ON) (at VGS= -1.8V)
< 68mΩ
- RoHS Compliant
- Halogen Free
ESD Protected
TSOP6
Bottom View
Top View
D
Top View
D
D
D
D
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 0: January 2009
Steady-State
Steady-State
A
2.1
W
1.3
TJ, TSTG
Symbol
t ≤ 10s
V
-30
PD
TA=70°C
±8
-4
IDM
TA=25°C
Power Dissipation B
Units
V
-5.5
ID
TA=70°C
Maximum
-20
RθJA
RθJL
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°C
-55 to 150
Typ
48
75
37
Max
60
90
45
Units
°C/W
°C/W
°C/W
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AO6409AL
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
VDS=-20V, VGS=0V
-20
-5
±10
µA
-0.85
V
36
44
51
61
VGS=-2.5V, ID=-5A
44
53
mΩ
VGS=-1.8V, ID=-4A
53
68
mΩ
VDS=-5V, ID=-5.5A
20
VDS=0V, VGS= ±8V
VDS=VGS ID=-250µA
-0.35
VGS=-4.5V, VDS=-5V
-30
VGS=-4.5V, ID=-5.5A
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
µA
-0.57
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Output Capacitance
Units
V
TJ=55°C
VGS(th)
ID(ON)
Coss
Max
-1
IGSS
IS
Typ
VGS=0V, VDS=-10V, f=1MHz
VGS=-4.5V, VDS=-10V, ID=-5.5A
A
-0.64
mΩ
S
-1
V
-2
A
620
780
940
pF
80
115
150
pF
50
80
110
pF
7.4
9.3
11
nC
1.2
1.5
1.8
nC
1
1.8
2.5
nC
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-5.5A, dI/dt=500A/µs
11
14
17
Qrr
Body Diode Reverse Recovery Charge IF=-5.5A, dI/dt=500A/µs
24
30
36
VGS=-4.5V, VDS=-10V, RL=1.8Ω,
RGEN=3Ω
120
ns
240
2.8
ns
µs
2
µs
ns
nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 0: January 2009
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: January 2009
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Page 2 of 5
AO6409AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
-8V
35
15
-4.5V
-3.0V
VDS=-5V
12
30
-2.5V
9
ID(A)
ID (A)
25
20
6
-2.0V
15
10
3
5
125°C
0
0
0
1
2
3
4
0
5
0.5
80
1.5
2
Normalized On-Resistance
1.6
70
RDS(ON) (mΩ)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=-1.8V
60
VGS=-2.5V
50
VGS=-4.5V
40
30
ID=-5.5A, VGS=-4.5V
1.4
ID=-5A, VGS=-2.5V
17
5
ID=-4A, VGS=-1.8V
2
10
1.2
1
0.8
20
0
2
4
6
8
0
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+01
120
ID=-5.5A
1.0E+00
100
40
1.0E-01
80
IS (A)
RDS(ON) (mΩ)
25°C
VGS=-1.5V
125°C
60
125°C
25°C
1.0E-02
1.0E-03
40
1.0E-04
25°C
20
0
2
4
1.0E-05
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: January 2009
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO6409AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1400
VDS=-10V
ID=-5.5A
1200
Capacitance (pF)
VGS (Volts)
4
3
2
1
800
600
Coss
400
200
0
Crss
0
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
12
0
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
1000
100
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
100µ
Power (W)
10
ID (Amps)
Ciss
1000
1m
1
10ms
100ms
10s
TJ(Max)=150°C
TA=25°C
0.1
0.01
0.01
0.1
100
10
DC
1
VDS (Volts)
10
1
0.00001
100
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
PD
0.01
0.001
0.00001
Single Pulse
0.0001
0.001
Ton
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: January 2009
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Page 4 of 5
AO6409AL
Gate Charge Test Circuit & W aveform
Vgs
Qg
-10V
+
VDC
-
Qgs
Vds
Qgd
+
VDC
DUT
Vgs
Ig
Charge
R esistive S w itching T est C ircuit & W avefo rm s
RL
V ds
t off
t on
V gs
VDC
-
DUT
V gs
Rg
td(on)
t d(o ff)
tr
tf
90%
V dd
+
V gs
10%
V ds
D io de R ec overy T est C ircuit & W aveform s
Q rr = -
V ds +
DUT
Vds -
Isd
V gs
Ig
Rev 0: January 2009
Idt
Vg s
L
-Isd
+
VD C
-
-I F
t rr
d I/d t
-I R M
V dd
V dd
-V d s
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Page 5 of 5