ROHM RBQ30NS65A

Data Sheet
Schottky Barrier Diode
RBQ30NS65A
lApplications
General rectification
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
BQ30NS
65A
lFeatures
1)Cathode Common Dual type.(LPDS)
2)Low IR.
①
lConstruction
Silicon epitaxial planer
lStructure
ROHM : LPDS
JEITA : TO263S
①
Manufacture Year, Week and Day
①
②
③
lTaping dimensions (Unit : mm)
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive)
Reverse voltage (DC)
VR
Average rectified forward current (*1)
Io
IFSM
Forward current surge peak (60Hz・1cyc) (*2)
Junction temperature
Tj
Storage temperature
Limits
65
65
30
100
150
-40 to +150
Tstg
Unit
V
V
A
A
°C
°C
(*1) 60Hz half sin wave, 1/2 Io per diode.
(*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C.
lElectrical characteristics (Tj=25°C)
Parameter
Symbol
VF
Min.
Typ.
Max.
Unit
Forward voltage
-
-
0.69
V
Reverse current
IR
-
-
0.45
mA
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1/4
Conditions
IF=15A
VR=65V
2011.11 - Rev.A
Data Sheet
RBQ30NS65A
100000
100
Ta=150°C
Ta=125°C
10
REVERSE CURRENT:IR(mA)
FORWARD CURRENT:IF(A)
10000
Ta=150°C
1
Ta=75°C
Ta=25°C
0.1
1000
Ta=125°C
100
Ta=75°C
10
1
Ta=25°C
0.1
Ta=-25°C
Ta=-25°C
0.01
0.01
0
100
200
300
400
500
600
700
800
0
900
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
700
f=1MHz
Ta=25°C
IF=15A
n=30pcs
690
680
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
10000
1000
100
10
670
AVE:645.4mV
660
650
640
630
620
610
600
1
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
100
60
AVE:40.08mA
40
20
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1300
Ta=25°C
VR=65V
n=30pcs
80
REVERSE CURRENT:IR(mA)
5 10 15 20 25 30 35 40 45 50 55 60 65 70
1290
Ta=25°C
f=1MHz
VR=0V
n=10pcs
1280
1270
1260
1250
1240
AVE:1225.8pF
1230
1220
1210
1200
0
IR DISPERSION MAP
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Ct DISPERSION MAP
2/4
2011.11 - Rev.A
Data Sheet
RBQ30NS65A
500
30
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
450
IFSM
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
400
1cyc
8.3ms
350
AVE:271.0A
300
250
200
150
100
25
20
AVE:16.1ns
15
10
5
50
0
0
IFSM DISPERSION MAP
trr DISPERSION MAP
500
500
450
450
8.3ms
350
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
400
8.3ms
1cyc
300
250
200
150
100
IFSM
400
t
350
300
250
200
150
100
50
50
0
0
1
10
100
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
40
100
Rth(j-a)
10
1
30
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
35
Rth(j-c)
0.1
25
D=1/2
20
Sin(q＝180)
15
10
DC
5
0.01
0.001
0
0.01
0.1
1
10
100
1000
0
TIME:t(s)
Rth-t CHARACTERISTICS
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10
20
30
40
50
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
3/4
2011.11 - Rev.A
Data Sheet
RBQ30NS65A
7
60
0A
50
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
6
5
4
3
DC
2
Sin(q＝180)
t
DC
40
T
D=1/2
VR
D=t/T
VR=30V
Tj=150°C
30
20
Sin(q＝180)
D=1/2
10
1
0
0
0
10
20
30
40
50
60
70
0
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
25
50
75
100
125
150
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
80
30
Io
t
60
T
DC
No break at 30kV
25
VR
D=t/T
VR=30V
Tj=150℃
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
0A
0V
70
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io
0V
50
40
D=1/2
30
20
Sin(θ=180)
20
15
10
AVE:5.9kV
5
10
0
0
0
25
50
75
100
125
150
C=200pF
R=0W
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
C=100pF
R=1.5kW
ESD DISPERSION MAP
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4/4
2011.11 - Rev.A
Notice
Notes
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R1120A