ROHM RBE2EA20A

Data Sheet
Schottky Barrier Diode
RBE2EA20A
lApplications
Low current rectification
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
2.9±0.1
＋0.1
0.16±0.1
0.06
0.4　－0.05 各リードとも同寸法
Each lead has
same dimensions
(4)
(1)
(2)
0.95
(3)
0～0.1
0.33±0.03
0.7±0.1
0.95
0.95
0.3～0.6
＋0.2
1.6 －0.1
0.450.35
2.8±0.2
(5)
lFeatures
1)Small mold type.(TSMD5)
2)High reliability
2.4
1.0 min.
0.8
0.7
0.35 0.45
0.95
1.9
TSMD5
0.85±0.1
1.9±0.2
1.0Max
lStructure
ROHM : TSMD5
dot (year week factory)
lTaping dimensions (Unit : mm)
φ 1.55±0.05
2.0±0.05
0.3±0.1
Reverse current
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IR
3.2±0.08
8.0±0.2
1.1±0.08
Unit
V
V
A
A
C
C
Min.
Typ.
Max.
-
-
0.39
V
-
-
700
μA
1/4
0～0.5
3.2±0.08
lAbsolute maximum ratings (Tc=25C)
Parameter
Limits
Symbol
VRM
Reverse voltage (repetitive)
30
VR
Reverse voltage (DC)
20
Average rectified forwarfd current (*1)
2
Io
IFSM
Forward current surge peak (60Hz・1cyc)(*2)
5
Junction temperature
125
Tj
Storage temperature
-40 to +125
Tstg
(*1) Business frequencies, Rating of per diode : Io/2
(*2) Rating of per diode
lElectrical characteristics (Tj=25C)
Parameter
Symbol
VF
Forward voltage
φ 1.1±0.1
4.0±0.1
3.2±0.08
5.5±0.2
3.5±0.05
1.75±0.1
4.0±0.1
Unit
Conditions
IF=1A
VR=20V
2011.10 - Rev.A
Data Sheet
RBE2EA20A
100000
10
Ta=125°C
REVERSE CURRENT:IR(μA)
FORWARD CURRENT:IF(A)
10000
Ta=125°C
1
Ta=75°C
0.1
Ta=25°C
Ta=75°C
1000
Ta=25°C
100
Ta=-25°C
10
Ta=-25°C
1
0.01
0
100
200
300
400
0
500
5
10
15
20
30
375
1000
FORWARD VOLTAGE:VF(mV)
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
25
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
100
10
Ta=25°C
IF=1A
n=30pcs
365
355
AVE:343.3mV
345
335
1
325
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
250
Ta=25°C
VR=20V
n=30pcs
250
200
AVE:223.9μA
150
100
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(μA)
300
Ta=25°C
f=1MHz
VR=0V
n=10pcs
240
230
220
AVE:211pF
210
50
200
0
Ct DISPERSION MAP
IR DISPERSION MAP
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2/4
2011.10 - Rev.A
Data Sheet
RBE2EA20A
30
30
1cyc
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
8.3ms
20
AVE:13.85A
10
20
15
AVE:9.2ns
10
5
0
0
IFSM DISRESION MAP
trr DISPERSION MAP
30
30
IFSM
25
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
25
8.3ms
1cyc
20
15
10
IFSM
t
20
15
10
5
5
0
0
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1
100
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
2
10000
1000
Rth(j-a)
100
Rth(j-c)
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
Mounted on epoxy board
10
1.5
1
D=1/2
Sin(θ＝180)
0.5
DC
1
0.001
0
0.01
0.1
1
10
100
1000
0
TIME:t(s)
Rth-t CHARACTERISTICS
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3/4
0.5
1
1.5
2
2.5
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
3
3.5
2011.10 - Rev.A
Data Sheet
RBE2EA20A
5
5
0A
4.5
4
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
Io
0V
4
3
2
DC
D=1/2
1
VR
t
3.5
T
D=t/T
VR=10V
Tj=125°C
3
DC
2.5
D=1/2
2
1.5
1
Sin(θ＝180)
0.5
0
Sin(θ＝180)
0
0
10
20
30
0
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
5
30
Io
0A
0V
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
4
No break at 30kV
t
DC
3.5
T
25
VR
D=t/T
VR=10V
Tj=125°C
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
4.5
3
D=1/2
2.5
2
1.5
Sin(θ＝180)
1
20
15
10
AVE:4.4kV
5
0.5
0
0
0
25
50
75
100
125
C=200pF
R=0Ω
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
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C=100pF
R=1.5kΩ
ESD DISPERSION MAP
4/4
2011.10 - Rev.A
Notice
Notes
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R1120A