Data Sheet Schottky Barrier Diode RB751VM-40 lApplications High speed switching lDimensions (Unit : mm) 0.1±0.1 0.05 0.9MIN. 0.8MIN. 1.25±0.1 lLand size figure (Unit : mm) 2.5±0.2 1.7±0.1 2.1 lFeatures 1)Ultra small mold type. (UMD2) 2)Low IR 3)High reliability UMD2 lConstruction Silicon epitaxial lStructure 0.7±0.2 0.1 0.3±0.05 ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-901A dot (year week factory) lTaping specifications (Unit : mm) 2.0±0.05 φ 1.55±0.05 0.3±0.1 φ 1.05 4.0±0.1 1.40±0.1 2.8±0.1 2.75 8.0±0.2 3.5±0.05 1.75±0.1 4.0±0.1 1.0±0.1 lAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg lElectrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Limits 40 30 30 200 150 Unit V V mA mA °C °C -40 to +150 Min. Typ. Max. Unit Conditions - - 0.37 V IF=1mA Reverse current IR - - 0.5 μA Capacitance between terminals Ct - 2 - pF VR=30V VR=1V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.A Data Sheet RB751VM-40 10 1000 REVERSE CURRENT:IR(uA) 10 Ta=75℃ 1 Ta=-25℃ Ta=25℃ 0.1 Ta=75℃ 10 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 0.001 0.01 0 0 100 200 300 400 500 600 700 800 900 1000 10 0 300 290 280 AVE:282.4mV 270 800 700 600 500 400 AVE:245.0nA 300 200 260 4 AVE:2.1pF 3 2 0 Ct DISPERSION MAP 8.3ms 10 AVE:3.24A 10 IF=0.1A IR=0.1A 25 Irrr=0.1*IR 20 15 AVE:7.7ns 10 5 0 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) REVERSE RECOVERY TIME:trr(ns) 1cyc 15 1cyc 5 1 20 10 5 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) t 0 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 100 0.05 1000 Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP IFSM DISPERSION MAP 15 8.3ms 8.3ms 0 0 1 5 IR DISPERSION MAP Ifsm 0.1 6 1 30 5 Ta=25℃ f=1MHz VR=1V n=10pcs 7 0 VF DISPERSION MAP 20 30 8 100 250 20 9 Ta=25℃ VR=30V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=1mA n=30pcs 310 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 10 900 REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 0.1 30 1000 320 PEAK SURGE FORWARD CURRENT:IFSM(A) 20 1 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz Ta=125℃ 100 Mounted on epoxy board Rth(j-a) 0.04 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) FORWARD CURRENT:IF(mA) Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 100 10 D=1/2 0.03 Sin(θ＝180) 0.02 DC 0.01 1 0.001 0.00 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 1000 0.00 0.01 0.02 0.03 0.04 0.05 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS 2011.06 - Rev.A 0.1 0.008 0.08 0.006 D=1/2 DC 0.004 Sin(θ＝180) 0.002 0.10 Io 0A 0V t 0.06 DC 0.04 T VR D=t/T VR=15V Tj=150℃ D=1/2 0.02 Sin(θ＝180) 0 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.01 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) Data Sheet RB751VM-40 Io 0A 0.08 0V T VR D=t/T VR=15V Tj=150℃ 100 125 t 0.06 DC 0.04 D=1/2 0.02 Sin(θ＝180) 0.00 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) DERATING CURVE (Io-Ta) 150 0 25 50 75 150 CASE TEMPARATURE:Tc(℃) DERATING CURVE (Io-Tc) ELECTROSTATIC DISCHARGE TEST ESD(KV) 5 4.5 4 3.5 3 AVE:3.34kV 2.5 2 1.5 AVE:0.418kV 1 0.5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A