ROHM RBQ30T45A

Data Sheet
Schottky Barrier Diode
RBQ30T45A
lApplications
General rectification
lDimensions (Unit : mm)
lStructure
4.5±0.3
0.1
2.8±0.2
0.1
8.0±0.2
12.0±0.2
lFeatures
1)Cathode common type.
2)Low IR
3)High reliability
5.0±0.2
①
lConstruction
Silicon epitaxial planer
15.0±0.4
0.2
8.0
10.0±0.3
0.1
13.5MIN
1.2
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM : TO220FN
①
Manufacture Date
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive)
Reverse voltage (DC)
VR
Average rectified forward current (*1)
Io
IFSM
Forward current surge peak (60Hz・1cyc)
Junction temperature
Tj
Storage temperature
Limits
45
45
30
100
150
Unit
V
V
A
A
°C
°C
-40 to +150
Tstg
(*1) Rating of per diode : Io/2
lElectrical characteristics (Tj=25°C)
Parameter
Symbol
VF
Min.
Typ.
Max.
Unit
Forward voltage
-
-
0.65
V
Reverse current
IR
-
-
450
mA
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1/4
Conditions
IF=15A
VR=45V
2011.11 - Rev.A
Data Sheet
RBQ30T45A
100000
100
Ta=150°C
Ta=125°C
10
REVERSE CURRENT:IR(μA)
FORWARD CURRENT:IF(A)
10000
Ta=150°C
1
Ta=75°C
Ta=25°C
0.1
Ta=-25°C
1000
Ta=125°C
100
Ta=75°C
10
1
Ta=25°C
0.1
Ta=-25°C
0.01
0.01
0
100
200
300
400
500
600
700
800
0
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
30
40
50
600
590
f=1MHz
580
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
20
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
10000
1000
100
10
AVE:564.4mV
Ta=25°C
IF=15A
n=30pcs
570
560
550
540
530
520
510
1
500
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
1600
90
Ta=25°C
VR=45V
n=30pcs
80
70
60
50
AVE:36.6mA
40
30
20
10
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
100
REVERSE CURRENT:IR(mA)
10
Ta=25°C
f=1MHz
VR=0V
n=10pcs
1590
1580
AVE:1562.4pF
1570
1560
1550
1540
1530
1520
1510
0
1500
IR DISPERSION MAP
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Ct DISPERSION MAP
2/4
2011.11 - Rev.A
500
30
1cyc
IFSM
400
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Data Sheet
RBQ30T45A
8.3ms
AVE265A
300
200
100
AVE:19.2ns
20
15
10
5
0
0
trr DISPERSION MAP
IFSM DISRESION MAP
500
500
450
450
400
8.3ms
350
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
8.3ms
1cyc
300
250
200
150
IFSM
400
t
350
300
250
200
150
100
100
50
50
0
0
1
10
100
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
35
30
100
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
Rth(j-a)
10
Rth(j-c)
1
25
D=1/2
20
Sin(q＝180)
15
10
DC
0.1
5
0.01
0.001
0
0.01
0.1
1
10
100
1000
0
TIME:t(s)
Rth-t CHARACTERISTICS
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10
20
30
40
50
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
3/4
2011.11 - Rev.A
Data Sheet
RBQ30T45A
6
60
5
50
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
0A
4
3
DC
2
D=1/2
Sin(θ＝180)
1
t
T
40
VR
D=t/T
VR=20V
Tj=150°C
DC
D=1/2
30
20
10
0
Io
0V
Sin(q＝180)
0
0
10
20
30
40
50
0
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
25
50
75
100
125
150
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
30
80
Io
0A
0V
No break at 30kV
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
t
60
DC
T
50
40
25
VR
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
70
D=t/T
VR=20V
Tj=150°C
D=1/2
30
20
Sin(q＝180)
20
15
AVE:16.2kV
10
5
10
0
0
0
25
50
75
100
125
150
C=200pF
R=0W
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
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© 2011 ROHM Co., Ltd. All rights reserved.
C=100pF
R=1.5kW
ESD DISPERSION MAP
4/4
2011.11 - Rev.A
Notice
Notes
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R1120A