ROHM 2SA2091S

2SA2091S
Transistors
Medium power transistor (−60V, −1A)
2SA2091S
!External dimensions (Unit : mm)
SPT
(SC-72)
2.0
3Min.
3.0
4.0
(15Min.)
!Features
1) High speed switching. (Tf : Typ. : 30ns at IC = −1A)
2) Low saturation voltage, typically
(Typ. : −200mV at IC = −0.5A, IB = −50mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SC5879S
0.45
2.5
!Applications
Small signal low frequency amplifier
High speed switching
0.5
0.45
5.0
(1) Emitter
(2) Collector
(3) Base
(1) (2) (3)
Taping specifications
Abbreviated symbol : A2091S
!Structure
PNP Silicon epitaxial planar transistor
!Packaging specifications
Package
Type
Taping
TP
Code
Basic ordering unit (pieces)
5000
2SA2091S
!Absolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
−60
V
Collector-emitter voltage
VCEO
−60
V
Emitter-base voltage
VEBO
−6
V
DC
IC
−1.0
A
Pulsed
ICP
−2.0
A
Power dissipation
PC
300
mW
Junction temperature
Tj
150
°C
Tstg
−55 to 150
°C
Parameter
Collector current
Range of storage temperature
∗
∗Pw=100ms
1/3
2SA2091S
Transistors
!Electrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
Min.
−60
−60
−6
−
−
Typ.
−
−
−
−
−
Max.
−
−
−
−1.0
−1.0
Unit
V
V
V
µA
µA
Collector-emitter saturation voltage
VCE (sat)
−
−200
−500
mV
hFE
120
−
270
−
fT
−
300
−
MHz
Corrector output capacitance
Cob
−
15
−
pF
Turn-on time
Storage time
Fall time
Ton
Tstg
Tf
−
−
−
30
100
30
−
−
−
ns
ns
ns
DC current gain
Transition frequency
Condition
IC= −1mA
IC= −100µA
IE= −100µA
VCB= −40V
VEB= −4V
IC= −500mA
IB= −50mA
VCE= −2V
IC= −100mA
VCE= −10V
IE=100mA
f=10MHz
VCB= −10V
IE=0mA
f=1MHz
IC= −1.0A
IB1= −100mA
IB2=100mA
VCC −25V
∗1
∗2
∗1 Non repetitive pulse
∗2 See Switching charactaristics measurement circuits
!hFE RANK
Q
120−270
!Electrical characteristic curves
100ms
10ms
1ms
−0.1
DC
−0.01
Single
non repetitive
Pulsed
−0.1
−1
−10
Tstg
100
10
−0.01
−100
Ta=25°C
VCC= −25V
IC / IB=10 / 1
Tf
Ton
−0.1
−1
1000
DC CURRENT GAIN : hFE
−1
0.001
−0.01
100
VCE= −2V
Ta=125°C
Ta=25°C
Ta= −40°C
10
1
−0.001
−10
−0.01
−0.1
−1
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 Safe Operating Area
Fig.2 Switching Time
Fig.3 DC Current Gain vs.
Collector Current (Ι)
VCE= −5V
VCE= −3V
VCE= −2V
100
10
1
−0.001
−10
Ta=25°C
−0.01
−0.1
−1
COLLECTOR CURRENT : IC (A)
Fig.4 DC Current Gain vs.
Collector Current (ΙΙ)
−10
−1
−0.1
−0.01
−0.001
−10
IC / IB=10 / 1
COLLECTOR SATURATION
VOLTAGE : VCE (sat)
1000
DC CURRENT GAIN : hFE
SWITCHING TIME : SW(ns)
1000
COLLECTOR SATURATION
VOLTAGE : VCE (sat)
COLLECTOR CURRENT : IC (A)
−10
Ta=125°C
Ta=25°C
Ta= −40°C
−0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)
−10
Ta=25°C
−1
IC / IB=100/1
IC / IB=20/1
IC / IB=10/1
−0.1
−0.01
−0.001
−0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-Emitter Saturation
Voltage vs. Collector Current (ΙΙ)
2/3
2SA2091S
Transistors
−1
Ta=125°C
Ta=25°C
Ta= −40°C
−0.1
−0.01
−0.001
−0.01
−0.1
−1
−1
−1
−1.5
Ta=25°C
VCE= −10V
100
10
1
0.001
0.01
0.1
1
10
EMITTER CURRENT : IE (A)
Fig.9 Transition Frequency
Fig.8 Grounded Emitter
Propagation Characteristics
Fig.7 Base-Emitter Saturation
Voltage vs. Collecter Current
COLLECTOR OUTPUT
CAPACITANCE : Cob (pF)
−0.5
0
1000
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (A)
100
Ta=125°C
Ta=25°C
Ta= −40°C
−0.1
−0.01
−10
VCE= −2V
TRANSITION FREQUENCY : fT (MHz)
−10
IC / IB=10 / 1
COLLECTOR CURRENT : IC (A)
BASE EMITTER SATURATION
VOLTAGE : VBE (sat) (V)
−10
Ta=25°C
f=1MHz
10
1
−0.1
−1
−10
−100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.10 Collector Output Capacitance
!Switching characteristics measurement circuits
RL=12.5Ω
IC
IB1
VIN
PW
VCC −25V
IB2
PW 50µs
DUTY CYCLE ≤ 1%
IB2
IB1
BASE CURRENT
WAVEFORM
90%
COLLECTOR CURRENT
WAVEFORM
Ton
Tstg
Tf
IC
10%
3/3
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0