2SC5730K Transistors Medium power transistor (30V, 1A) 2SC5730K zExternal dimensions (Unit : mm) (2) (3) 0.4 1.9 (SC-59) <SOT-346> 2.9 (1) SMT3 0.95 0.95 zFeatures 1) High speed switching. (Tf : Typ. : 50ns at IC = 1.0A) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 500mA, IB = 50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2048K 1.6 1.1 0.8 (1) Emitter (2) Base (3) Collector 0.15 2.8 0.3Min. Each lead has same dimensions Abbreviated symbol : UM zApplications Small signal low frequency amplifier High speed switching zStructure NPN Silicon epitaxial planar transistor zPackaging specifications Package Type Taping Code T146 Basic ordering unit (pieces) 3000 2SC5730K zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Parameter VEBO 6 V DC IC 1.0 A Pulsed ICP 2.0 A Power dissipation PC 200 mW Junction temperature Tj 150 °C Tstg −55 to 150 °C Emitter-base voltage Collector current Range of storage temperature ∗1 ∗2 ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land 1/3 2SC5730K Transistors zElectrical characteristics (Ta=25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol BVCEO BVCBO BVEBO ICBO IEBO Min. 30 30 6 − − Typ. − − − − − Max. − − − 1.0 1.0 Unit V V V µA µA Collector-emitter saturation voltage VCE (sat) − 150 300 mV hFE 120 − 390 − fT − 280 − MHz Corrector output capacitance Cob − 7 − pF Turn-on time Storage time Fall time Ton Tstg Tf − − − 40 150 50 − − − ns ns ns DC current gain Transition frequency Condition IC=1mA IC=100µA IE=100µA VCB=20V VEB=4V IC=500mA IB=50mA VCE=2V IC=100mA VCE=10V IE= −100mA f=10MHz VCB=10V IE=0A f=1MHz IC=1.0A IB1=100mA IB2= −100mA VCC 25V ∗1 ∗2 ∗1 Non repetitive pulse ∗2 See Switching charactaristics measurement circuits zhFE RANK Q 120−270 R 180−390 zElectrical characteristic curves 1 100ms 10ms 0.1 DC 0.01 Single non repetitive Pulsed 0.001 0.1 1 10 100 Tstg Ton Tf 10 0.01 100 0.1 1 1000 100 Ta=100°C Ta=25°C Ta= −40°C 10 1 0.001 10 VCE=2V 0.01 0.1 1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Safe Operating Area Fig.2 Switching Time Fig.3 DC Current Gain vs. Collector Current (Ι) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 100 VCE=5V VCE=3V VCE=2V 10 1 0.001 10 Ta=25°C 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.4 DC Current Gain vs. Collector Current (ΙΙ) 10 1 Ta=100°C Ta=25°C Ta= −40°C 0.1 0.01 0.001 10 IC / IB=10 / 1 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1000 DC CURRENT GAIN : hFE SWITCHING TIME : (ns) COLLECTOR CURRENT : IC (A) 1ms Ta=25°C VCC=25V IC / IB=10 / 1 DC CURRENT GAIN : hFE 1000 10 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) 10 Ta=25°C 1 IC / IB=20 / 1 IC / IB=10 / 1 0.1 0.01 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) 2/3 2SC5730K Transistors 1 Ta=100°C Ta=25°C Ta= −40°C 0.1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=100°C Ta=25°C Ta= −40°C 0.1 0 0.5 1 1000 Ta=25°C VCE=10V 100 10 1.5 BASE TO EMITTER VOLTAGE : VBE (V) Fig.7 Base-Emitter Saturation Voltage vs. Collecter Current 100 1 0.01 10 VCE=2V TRANSITION FREQUENCY : fT (MHz) 10 IC / IB=10 / 1 COLLECTOR CURRENT : IC (A) BASE EMITTER SATURATION VOLTAGE : VBE (sat) (V) 10 1 0.001 0.01 0.1 1 10 EMITTER CURRENT : IE (A) Fig.8 Grounded Emitter Propagation Characteristics Fig.9 Transition Frequency Ta=25°C f=1MHz 10 1 0.1 1 10 100 BASE TO COLLECTOR VOLTAGE : VCB (V) Fig.10 Collector Output Capacitance zSwitching characteristics measurement circuits RL=25Ω VIN IB1 IC VCC 25V PW IB2 PW 50 S Duty cycle ≤ 1% IB1 IB2 Base current waveform 90% IC Collector current waveform 10% Ton Tstg Tf 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0