2N4199 2N4204.aspx?ext=

High-reliability discrete products
and engineering services since 1977
2N4199-2N4204
SILICON CONTROLLED RECTIFIER
FEATURES


Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRRM
50
Volts
VDRM
300
400
500
600
700
800
Volts
ITRM
100
Amps
Peak Reverse Blocking Voltage, Note 1 (TJ = 105°C)
Peak Forward Blocking Voltage, Note 1 (TC = 105°C)
2N4199
2N4200
2N4201
2N4202
2N4203
2N4204
Repetitive Peak On-State Current
(PW = 3 µs, Duty Cycle = 0.6%, TC = 85°C)
Continuous On-State Current (TC = 65°C)
IT
5
Amps
Current Application Rate, Note 2
di/dt
5000
A/µs
Peak Forward Gate Power
PGFM
20
Watt
Average Forward Gate Power
PGF(AV)
1
Watt
Peak Forward Gate Current
IGFM
5
Amps
Peak Gate Voltage – Forward
Reverse, Note 3
VGFM
VGRM
10
10
Volts
Operating Junction Temperature Range
Blocking State
Conducting State
TJ
-65 to +105
-65 to +200
Storage Temperature Range
Tstg
-65 to +200
°C
-
15
In. lb.
RӨJC
3
°C/W
Stud Torque
Thermal resistance, junction to case
°C
Note 1: Characterized for unilateral applications where reverse blocking capability is not important. V DRM and VRRM may be applied as a continuous dc voltage for zero or negative gate voltage
but positive gate voltage must not be applied concurrently with a negative potential on the anode. When checking blocking capability, do not permit the applied voltage to exceed the rated
voltage.
Note 2: Minimum Gate Trigger Pulse: IG = 200 mA, PW = 1 µs, tr = 20 ns.
Note 3: Do not reverse bias gate during forward conduction if anode current exceeds 10 amperes.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristics
Symbol
Min
Max
Unit
IDRM, IRRM
-
2
mA
Gate Trigger Current (Continuous dc)
(Anode Voltage = 7 Vdc, RL = 100 ohms, TC = 25°C)
(Anode Voltage = 7 Vdc, RL = 100 ohms, TC = -65°C)
IGT
-
50
100
mA
Gate Trigger Voltage (Continuous dc)
(Anode Voltage = rated VDRM, RL = 100 ohms, TC = 105°C)
(Anode Voltage = 7 Vdc, RL = 100 ohms, TC = 25°C)
(Anode Voltage = 7 Vdc, RL = 100 ohms, TC = -65°C)
VGT
0.2
-
1.5
2
Peak Forward or Reverse Blocking Current
(Rated VDRM or VRRM, gate open) TC = 105°C)
Volts
Rev. 20150604
High-reliability discrete products
and engineering services since 1977
2N4199-2N4204
SILICON CONTROLLED RECTIFIER
Symbol
Min
Max
Unit
Holding Current
(Anode Voltage = 7 Vdc, gate open, TC = 105°C)
Characteristics
IH
3
-
mA
Forward “on” Voltage
(ITM = 5 Adc, PW = 1 ms max, Duty Cycle ≤ 1%)
VTM
2.6
-
Volts
Dynamic Forward “on” Voltage
(0.5 µs after 50% decay point on dynamic forward voltage waveform)
Forward Current: 30 A pulse
Gate Pulse: at 200 mA, PW = 1 µs, tr = 20 ns
VTM
-
25
Volts
td
tr
-
200
200
150
130
100
tq
-
20
µs
dv/dt
250
-
V/µs
Turn-on Time ITM = 30 A
Delay Time
Rise Time
All Types
2N4199 & 2N4200
2N4201
2N4202
2N4203 & 2N4204
Pulse Turn-off Time
Test Conditions: PFN discharge; Forward Current = 30 A pulse;
Reverse Current = 5 A, TC = 85°C, dv/dt = 250V/µs to Rated VDRM;
Reverse Anode Voltage during turn-off interval = 0 V;
Reverse gate bias during turn-off interval = 6 V
Forward Voltage Application Rate (Linear Rise of Voltage)
(TC = 105°, gate open, VD = Rated VDRM
ns
Rev. 20150604
High-reliability discrete products
and engineering services since 1977
2N4199-2N4204
SILICON CONTROLLED RECTIFIER
MECHANICAL CHARACTERISTICS
Case
TO-64
Marking
Alpha-numeric
Pin out
See below
Rev. 20150604
High-reliability discrete products
and engineering services since 1977
2N4199-2N4204
SILICON CONTROLLED RECTIFIER
Rev. 20150604
High-reliability discrete products
and engineering services since 1977
2N4199-2N4204
SILICON CONTROLLED RECTIFIER
Rev. 20150604