High-reliability discrete products and engineering services since 1977 S2800 SERIES SILICON CONTROLLED RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating (1) Peak repetitive forward and reverse blocking voltage (TJ = 25 to 100°C, gate open) S2800F S2800A S2800B S2800D S2800M S2800N (1) Peak non-repetitive reverse voltage and non-repetitive off state voltage (TJ = 25 to 100°C, gate open) S2800F S2800A S2800B S2800D S2800M S2800N Forward on-state current RMS (all conduction angles) TC = 75°C Peak forward surge current (one cycle, sine wave, 60Hz, TC = 80°C) Circuit fusing considerations (t = 8.3ms) Forward peak gate power (t ≤ 10µs) Forward average gate power Operating junction temperature range Storage temperature range Symbol Value Unit 50 100 200 400 600 800 VRRM, VDRM Volts IT(RMS) 75 125 250 500 700 900 10 Amps ITSM 100 Amps It 2 40 As PGM PG(AV) TJ Tstg 16 0.5 -40 to +100 -40 to +150 Watts Watts °C °C VRSM, VDSM Volts 2 Note 1: VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Thermal resistance, junction to case Symbol RѲJC ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Peak forward or reverse blocking current (VAK = VDRM or VRRM, gate open) TC = 25°C TC = 100°C Instantaneous on-state voltage (ITM = 30A peak, pulse width ≤ 1ms, duty cycle ≤ 2%) Gate trigger current (continuous dc) (VD = 12V, RL = 30Ω) Gate trigger current (continuous dc) (VD = 12V, RL = 30Ω) Maximum value 2 Symbol Unit °C/W Min Typ Max Unit - - 10 2 µA mA VT - 1.7 2 Volts IGT - 8 15 mA VGT - 0.9 1.5 volts IDRM Rev. 20130128 High-reliability discrete products and engineering services since 1977 S2800 SERIES SILICON CONTROLLED RECTIFIERS Characteristic Holding current (VD = 12V, gate open, IT = 150mA) Gate controlled turn-on time (VD = rated VDRM, ITM = 2A, IGR = 80A) Circuit commutate turn off time (VD = VDRM, ITM = 2A, pulse width ≤ 50µs, dv/dt = 200V/µs, di/dt = 10A/µs, TC = 75°C) Critical rate of rise of off-state voltage (VC = Rated VDRM, exponential rise, TC = 100°C) Symbol Min Typ Max Unit IH - 10 20 mA tgt - 1.6 - µs tq - 25 - µs Dv/dt - 100 - V/µs MECHANICAL CHARACTERISTICS Case TO-220AB Marking Alpha numeric Pin out See below Rev. 20130128 High-reliability discrete products and engineering services since 1977 S2800 SERIES SILICON CONTROLLED RECTIFIERS Rev. 20130128