High-reliability discrete products and engineering services since 1977 MCR2150(A) SERIES SILICON CONTROLLED RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS. Rating Symbol Value Unit Repetitive peak off-state voltage(1) Peak repetitive reverse voltage MCR2150(A)-4 MCR2150(A)-5 MCR2150(A)-6 MCR2150(A)-7 MCR2150(A)-8 MCR2150(A)-9 MCR2150(A)-10 VRRM VDRM Forward current RMS (all conduction angles) IT(RMS) 15 Amps ITSM 160 Amps Circuit fusing considerations (t = 8.3ms) 2 It 100 A2s Forward peak gate power PGM 5.0 Watts Forward average gate power Peak forward surge current (1/2 cycle, sine wave, 60 Hz) 200 300 400 500 600 700 800 Volts PG(AV) 0.5 Watts Forward peak gate current IGM 2.0 Amps Operating junction temperature range TJ -40 to +125 °C Storage temperature range Tstg -40 to +150 °C Note 1: VRRM for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltage. THERMAL CHARACTERISTICS Characteristic Thermal resistance, junction to case Symbol Maximum Unit RӨJC 1.5 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Peak forward blocking current (Rated VDRM @ TJ = 125°C) IDRM Peak reverse blocking current (Rated VRRM @ TJ = 125°C) IRRM Peak on-state voltage(2) (ITM = 10A peak) (ITM = 30A peak) VTM Gate trigger current (continuous dc) (VD = 7.0V, RL = 100Ω) IGT Gate trigger voltage (continuous dc) (VD = 7.0V, RL = 100Ω) VGT Holding current (VD = 7.0V, RL = 100Ω) IH Min Typ. Max - - 3.0 - - 3.0 - - 3.0 3.75 - - 50 - - 2.5 - - 100 Unit mA mA Volts mA Volts mA Rev. 20130128 High-reliability discrete products and engineering services since 1977 Turn-off time (VDRM = rated voltage) (ITM = 10, di/dt = 5.0A/µs, reapplied dv/dt = 50V/µs) MCR2150 MCR2150A Forward voltage application rate MCR2150(A) SERIES SILICON CONTROLLED RECTIFIERS tq dv/dt - 3.0 - 10 4.0 100 150 - µs V/µs Note 2: Pulse test: pulse width = 1.0ms, duty cycle ≤ 2%. MECHANICAL CHARACTERISTICS Case: TO-220AB Marking: Body painted, alpha-numeric Pin out: See below Rev. 20130128 High-reliability discrete products and engineering services since 1977 MCR2150(A) SERIES SILICON CONTROLLED RECTIFIERS Rev. 20130128