MCR2150(A) SERIES.aspx?ext=

High-reliability discrete products
and engineering services since 1977
MCR2150(A) SERIES
SILICON CONTROLLED RECTIFIERS
FEATURES


Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS.
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage(1)
Peak repetitive reverse voltage
MCR2150(A)-4
MCR2150(A)-5
MCR2150(A)-6
MCR2150(A)-7
MCR2150(A)-8
MCR2150(A)-9
MCR2150(A)-10
VRRM
VDRM
Forward current RMS (all conduction angles)
IT(RMS)
15
Amps
ITSM
160
Amps
Circuit fusing considerations (t = 8.3ms)
2
It
100
A2s
Forward peak gate power
PGM
5.0
Watts
Forward average gate power
Peak forward surge current (1/2 cycle, sine wave, 60 Hz)
200
300
400
500
600
700
800
Volts
PG(AV)
0.5
Watts
Forward peak gate current
IGM
2.0
Amps
Operating junction temperature range
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
Note 1: VRRM for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking capability
in a manner such that the voltage supplied exceeds the rated blocking voltage.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
Maximum
Unit
RӨJC
1.5
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Peak forward blocking current
(Rated VDRM @ TJ = 125°C)
IDRM
Peak reverse blocking current
(Rated VRRM @ TJ = 125°C)
IRRM
Peak on-state voltage(2)
(ITM = 10A peak)
(ITM = 30A peak)
VTM
Gate trigger current (continuous dc)
(VD = 7.0V, RL = 100Ω)
IGT
Gate trigger voltage (continuous dc)
(VD = 7.0V, RL = 100Ω)
VGT
Holding current
(VD = 7.0V, RL = 100Ω)
IH
Min
Typ.
Max
-
-
3.0
-
-
3.0
-
-
3.0
3.75
-
-
50
-
-
2.5
-
-
100
Unit
mA
mA
Volts
mA
Volts
mA
Rev. 20130128
High-reliability discrete products
and engineering services since 1977
Turn-off time (VDRM = rated voltage)
(ITM = 10, di/dt = 5.0A/µs, reapplied dv/dt = 50V/µs)
MCR2150
MCR2150A
Forward voltage application rate
MCR2150(A) SERIES
SILICON CONTROLLED RECTIFIERS
tq
dv/dt
-
3.0
-
10
4.0
100
150
-
µs
V/µs
Note 2: Pulse test: pulse width = 1.0ms, duty cycle ≤ 2%.
MECHANICAL CHARACTERISTICS
Case:
TO-220AB
Marking:
Body painted, alpha-numeric
Pin out:
See below
Rev. 20130128
High-reliability discrete products
and engineering services since 1977
MCR2150(A) SERIES
SILICON CONTROLLED RECTIFIERS
Rev. 20130128