High-reliability discrete products and engineering services since 1977 MCR3835 SERIES SILICON CONTROLLED RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS. Rating Peak repetitive forward and reverse blocking voltage(1) MCR3835-1 MCR3835-2 MCR3835-3 MCR3835-4 MCR3835-5 MCR3835-6 MCR3835-7 MCR3835-8 MCR3835-9 MCR3835-10 Peak non-repetitive blocking voltage(1) MCR3835-1 MCR3835-2 MCR3835-3 MCR3835-4 MCR3835-5 MCR3835-6 MCR3835-7 MCR3835-8 MCR3835-9 MCR3835-10 Symbol VRRM, VDRM VRRM, VDRM Forward on-state current RMS (all conduction angles) IT(RMS) Value 25 50 100 200 300 400 500 600 700 800 25 50 100 200 300 400 500 600 700 800 35 Unit Volts Volts Amps Peak surge current (one cycle, 60Hz, TJ = -40 to +125°C) ITSM Circuit fusing considerations (TJ = -40 to +100°C, t ≤ 8.3ms) I2t Peak gate power PGM 5 Watts Average gate power 35 510 Amps A2s PG(AV) 0.5 Watts Peak forward gate current IGM 2 Amps Peak gate voltage, forward or reverse VGM 10 Volts Operating junction temperature range TJ -40 to +125 °C Storage temperature range Tstg -40 to +150 °C 30 In. lb. Mounting torque Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Thermal resistance, junction to case Symbol Maximum Unit RӨJC 1.2 °C/W Rev. 20130118 MCR3835 SERIES SILICON CONTROLLED RECTIFIERS High-reliability discrete products and engineering services since 1977 ELECTRICAL CHARACTERISTICS (TJ = 25°) Characteristic Peak forward or reverse blocking current (Rated VDRM or VRRM, gate open) TJ = 25°C TJ = 100°C Forward “on” voltage (ITM = 35A peak) Gate trigger current (continuous dc) (VD = 7V, RL = 100Ω) Gate trigger voltage (continuous dc) (VD = 7V, RL = 100Ω) (VD = rated VDRM, RL = 100Ω, T J = 100°C) Symbol IDRM, IRRM VTM Typ. Max. Unit - 1 10 5 µA mA - 1.2 1.5 - 10 40 0.2 0.7 - 1.5 - - 10 50 - 1 - - 20 30 - - 50 - IGT Volts mA Volts VGT VGD Holding current (VD = 7Vdc, gate open) IH Turn-on time (td + tr) (ITM = 35A, IGT = 40mAdc) Ton Turn-off time (ITM = 10A, IR = 10A) (ITM = 10A, IR = 10A, TJ = 100°C) tq Forward voltage application rate (VD = rated VDRM, TJ = 100°C) Min. mA µs µs V/µs dv/dt MECHANICAL CHARACTERISTICS Case: Digi PF2 Marking: Alpha-numeric Rev. 20130118 High-reliability discrete products and engineering services since 1977 MCR3835 SERIES SILICON CONTROLLED RECTIFIERS Rev. 20130118