MCR3935 SERIES.aspx?ext=

MCR3935 SERIES
SILICON CONTROLLED RECTIFIER
High-reliability discrete products
and engineering services since 1977
FEATURES

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
(1)
Peak repetitive forward and reverse blocking voltage
MCR3935-1
MCR3935-2
MCR3935-3
MCR3935-4
MCR3935-5
MCR3935-6
MCR3935-7
MCR3935-8
MCR3935-9
MCR3935-10
25
50
100
200
300
400
500
600
700
800
VRRM, VDRM
Peak non-repetitive reverse blocking voltage (t ≤ 5ms)
MCR3935-1
MCR3935-2
MCR3935-3
MCR3935-4
MCR3935-5
MCR3935-6
MCR3935-7
MCR3935-8
MCR3935-9
MCR3935-10
VRSM
Forward on-state current RMS (all conduction angles)
IT(RMS)
Volts
25
50
100
200
300
400
500
600
700
800
Volts
35
Amps
Peak surge current
(one cycle, 60Hz, TJ = -40 to +125°C)
ITSM
Circuit fusing considerations
(TJ = -40 to +100°C, t ≤ 8.3ms)
I2t
Peak gate power
PGM
5
Watts
Average gate power
PG(AV)
0.5
Watts
Amps
35
A2s
510
Peak forward gate current
IGM
2
Amps
Peak gate voltage, forward or reverse
VGM
10
Volts
Operating junction temperature range
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
30
In. lb.
Mounting torque
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum
Unit
Thermal resistance, junction to case
RӨJC
1.2
°C/W
Rev. 20150306
MCR3935 SERIES
SILICON CONTROLLED RECTIFIER
High-reliability discrete products
and engineering services since 1977
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Peak forward or reverse blocking current
(Rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 100°C
Forward “on” voltage
(ITM = 35A peak)
Gate trigger current (continuous dc)
(VD = 7V, RL = 100Ω)
Gate trigger voltage (continuous dc)
(VD = 7V, RL = 100Ω)
(VD = rated VDRM, RL = 100Ω, T J = 100°C)
Symbol
IDRM, IRRM
VTM
Typ.
Max.
Unit
-
1
10
5
µA
mA
-
1.2
1.5
-
10
40
0.2
0.7
-
1.5
-
-
10
50
-
1
-
-
20
30
-
-
50
-
IGT
Volts
mA
Volts
VGT
VGD
Holding current
(VD = 7Vdc, gate open)
IH
Turn-on time (td + tr)
(ITM = 35A, IGT = 40mAdc)
Ton
Turn-off time
(ITM = 10A, IR = 10A)
(ITM = 10A, IR = 10A, TJ = 100°C)
tq
Forward voltage application rate
(VD = rated VDRM, TJ = 100°C)
Min.
mA
µs
µs
V/µs
dv/dt
Rev. 20150306
High-reliability discrete products
and engineering services since 1977
MCR3935 SERIES
SILICON CONTROLLED RECTIFIER
MECHANICAL CHARACTERISTICS
Case
TO-48
Marking
Body painted, alpha-numeric
Polarity
Cathode is stud
Rev. 20150306
High-reliability discrete products
and engineering services since 1977
MCR3935 SERIES
SILICON CONTROLLED RECTIFIER
Rev. 20150306