2N6167 2N6170.aspx?ext=

High-reliability discrete products
and engineering services since 1977
2N6167-2N6170
SILICON CONTROLLED RECTIFIER
FEATURES

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Symbol
Value
Peak forward and reverse blocking voltage (1)
(TJ = -40 to 100°C)
2N6167
2N6168
2N6169
2N6170
Rating
VDRM
VRRM
100
200
400
600
Peak non-repetitive reverse blocking voltage
(t ≤ 5ms)
2N6167
2N6168
2N6169
2N6170
VRSM
Average forward current
(TC = -40 to +65°C)
(85°C)
IT(AV)
13
6.5
Amps
Peak surge current
(1 cycle, 60Hz, TC = 65°C)
(1.5ms pulse @ TJ = 100°C)
Preceded and followed by no current or voltage
ITSM
240
560
Amps
Circuit fusing (TJ = -40 to +100°C, t = 8.3ms)
I2t
235
A2s
Peak gate power
PGM
5
Watts
Average gate power
PG(AV)
0.5
Watts
IGM
2
Amps
Operating junction temperature range
TJ
-40 to 100
°C
Storage temperature range
Tstg
-40 to 150
°C
30
In. lb.
RӨJC
1.5
°C/W
Forward peak gate current
Stud torque
Thermal resistance, junction to case
150
250
450
650
Unit
Volts
Volts
Note 1: Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative
potential on the anode. Devices should not be tested with a constant source for forward or reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
Rev. 20150306
High-reliability discrete products
and engineering services since 1977
2N6167-2N6170
SILICON CONTROLLED RECTIFIER
ELECTRICAL CHARACTERSITICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
-
1
1
1
1
2.0
2.5
3.0
4.0
mA
mA
mA
mA
-
-
10
µA
-
1.5
1.7
OFF CHARACTERISTICS
Peak repetitive forward or reverse blocking current
(Rated VDRM or VRRM, gate open, TC = 100°C)
2N6167
2N6168
2N6169
2N6170
(Rated VDRM or VRRM, gate open, TC = 25°C)
All devices
Peak forward on-state voltage
(ITM = 41A peak)
IDRM, IRRM
VTM
Gate trigger current (continuous dc)
(VD = 12Vdc, RL = 24Ω)
TC = -40°C
TC = 25°C
IGT
Gate trigger voltage (continuous dc)
(VD = 12Vdc, RL = 24Ω)
TC = -40°C
TC = 25°C
VGT
Holding current
(VD = 12Vdc, gate open, IT = 200mA)
TC = -40°C
TC = 25°C
IH
Turn-on time
(ITM = 41A, VD = rated VDRM, IGT = 200mA, rise time ≤ 0.05µs, pulse width =
10µs)
ton
Turn-off time
(ITM = 10A, IR = 10A)
(ITM = 10A, IR = 10A, TJ = 100°C)
toff
Forward voltage application rate
(TJ = 100°C, VD = Rated VDRM)
Volts
mA
-
2.1
75
40
Volts
-
0.8
0.63
2.5
1.6
mA
-
3.5
90
50
-
-
1
-
25
40
-
-
50
-
µs
µs
dv/dt
V/µs
Rev. 20150306
High-reliability discrete products
and engineering services since 1977
2N6167-2N6170
SILICON CONTROLLED RECTIFIER
MECHANICAL CHARACTERISTICS
Case
TO-48 ISO
Marking
Alpha-numeric
Pin out
See below
Rev. 20150306