RV1C001ZP RV1C001ZP Datasheet Pch -20V -100mA Small Signal MOSFET lOutline VDSS -20V RDS(on) (Max.) 3.8W ID -100mA PD 100mW lFeatures (3) VML0806 (2) (1) lInner circuit 1) The world smallest Package (0806size). (1) Source (2) Gate (3) Drain 2) Low voltage drive(-1.2V) makes this device ideal for partable equipment. 3) Drive circuits can be simple. *1 BODY DIODE *2 ESD PROTECTION DIODE 4) Built-in G-S Protection Diode. lPackaging specifications Packaging Taping Reel size (mm) lApplication 180 Tape width (mm) Switching 8 Type Basic ordering unit (pcs) 8,000 Taping code T2L Marking RX lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage VDSS -20 V Continuous drain current ID *1 100 mA ID,pulse *2 400 mA Gate - Source voltage VGSS 10 V Power dissipation PD *3 100 mW Tj 150 °C Tstg -55 to +150 °C Pulsed drain current Junction temperature Range of storage temperature lThermal resistance Values Parameter Symbol RthJA *3 Thermal resistance, junction - ambient www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/10 Unit Min. Typ. Max. - - 1250 °C/W 2012.08 - Rev.A Data Sheet RV1C001ZP lElectrical characteristics(Ta = 25°C) Values Parameter Drain - Source breakdown voltage Symbol Conditions Unit Min. Typ. Max. V(BR)DSS VGS = 0V, ID = -1mA -20 - - V Zero gate voltage drain current IDSS VDS = -20V, VGS = 0V - - -1 mA Gate - Source leakage current IGSS VGS = 10V, VDS = 0V - - 10 mA VDS = -10V, ID = -100mA -0.3 - -1 V VGS= -4.5V, ID= -100mA - 2.5 3.8 VGS= -2.5V, ID= -50mA - 3.4 5.1 VGS= -1.8V, ID= -20mA - 4.8 8.2 VGS= -1.5V, ID= -10mA - 6.0 13.2 VGS= -1.2V, ID= -1mA - 10.0 40.0 VGS= -4.5V, ID= -100mA, Tj=125°C - 3.3 6.6 VDS= -10V, ID= -100mA 120 - - Gate threshold voltage Static drain - source on - state resistance Transconductance VGS (th) RDS(on) *4 gfs *4 W mS *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Each therminal mounted on a recommended land *4 Pulsed www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/10 2012.08 - Rev.A Data Sheet RV1C001ZP lElectrical characteristics(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input capacitance Ciss VGS = 0V - 15.0 - Output capacitance Coss VDS = -10V - 4.0 - Reverse transfer capacitance Crss f = 1MHz - 1.5 - VDD ⋍ -10V, VGS = -4.5V - 46 - tr *4 ID = -50mA - 62 - td(off) *4 RL = 200W - 325 - tf *4 RG = 10W - 137 - Turn - on delay time Rise time Turn - off delay time Fall time td(on) *4 pF ns lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) Values Parameter Continuous source current Symbol IS *1 Pulsed source current ISM *2 Forward voltage VSD www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. *4 Conditions Unit Min. Typ. Max. - - -80 mA - - -400 mA - - -1.2 V Ta = 25°C VGS = 0V, Is = -100mA 3/10 2012.08 - Rev.A Data Sheet RV1C001ZP lElectrical characteristic curves Fig.2 Drain Current Derating Curve 120 1.2 100 1 Drain Current Dissipation : ID/ID max. (%) Power Dissipation : PD/PD max. [%] Fig.1 Power Dissipation Derating Curve 80 60 40 20 0.8 0.6 0.4 0.2 0 0 0 50 100 150 -25 200 Junction Temperature : Tj [°C] 0.1 Drain Current : -ID [A] Drain Current : -ID [A] 100 125 150 VGS= -1.5V 0.08 VGS= -2.5V VGS= -1.5V VGS= -1.8V 75 VGS= -4.5V VGS= -4.0V VGS= -4.5V VGS= -4.0V 0.04 50 Fig.4 Typical Output Characteristics(II) 0.1 0.06 25 Junction Temperature : Tj [°C] Fig.3 Typical Output Characteristics(I) 0.08 0 Ta=25ºC Pulsed 0.02 Ta=25ºC Pulsed VGS= -2.5V 0.06 VGS= -1.8V 0.04 0.02 VGS= -1.2V VGS= -1.2V 0 0 0 0.2 0.4 0.6 0.8 1 0 Drain - Source Voltage : -VDS [V] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2 4 6 8 10 Drain - Source Voltage : -VDS [V] 4/10 2012.08 - Rev.A Data Sheet RV1C001ZP lElectrical characteristic curves Fig.6 Typical Transfer Characteristics 1 50 VDS= -10V VGS = 0V ID = -1mA Pulsed 40 Drain Current : -ID [A] Drain - Source Breakdown Voltage : -V(BR)DSS [V] Fig.5 Breakdown Voltage vs. Junction Temperature 30 20 10 0 0.1 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.01 0.001 -50 0 50 100 150 0 0.5 1.5 2 2.5 Gate - Source Voltage : -VGS [V] Junction Temperature : Tj [°C] Fig.8 Transconductance vs. Drain Current Fig.7 Gate Threshold Voltage vs. Junction Temperature 1 1.5 VDS= -10V VDS = -10V ID = -100mA Pulsed 1.2 Transconductance : gfs [S] Gate Threshold Voltage : -VGS(th) [V] 1 0.9 0.6 0.3 0.01 0.01 0 -50 0 50 100 150 Junction Temperature : Tj [°C] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 0.1 Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC 0.1 1 Drain Current : -ID [A] 5/10 2012.08 - Rev.A Data Sheet RV1C001ZP lElectrical characteristic curves Fig.9 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.10 Static Drain - Source On - State Resistance vs. Drain Current(I) 100 Static Drain - Source On-State Resistance : RDS(on) [W] Static Drain - Source On-State Resistance : RDS(on) [W] 20 Ta=25ºC 18 16 ID= -1mA 14 12 ID= -100mA 10 8 6 4 2 0 0 2 4 6 8 10 10 1 0.1 0.0001 Gate - Source Voltage : -VGS [V] 0.001 0.01 0.1 1 Drain Current : -ID [A] Fig.11 Static Drain - Source On - State Resistance vs. Junction Temperature Fig.12 Static Drain - Source On - State Resistance vs. Drain Current(II) 100 4 3 2 VGS = -4.5V ID = -100mA Pulsed 1 0 -50 -25 0 25 50 75 100 125 150 Static Drain - Source On-State Resistance : RDS(on) [W] 5 Static Drain - Source On-State Resistance : RDS(on) [W] VGS= -1.2V VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V Ta=25ºC Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 10 1 0.1 0.0001 0.001 0.01 0.1 1 Drain Current : -ID [A] Junction Temperature : Tj [ºC] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. VGS = -4.5V 6/10 2012.08 - Rev.A Data Sheet RV1C001ZP lElectrical characteristic curves Fig.13 Static Drain-Source On-State Resistance vs. Drain Current(III) Fig.14 Static Drain - Source On - State Resistance vs. Drain Current(IV) 100 VGS = -2.5V Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 10 1 0.1 0.0001 0.001 0.01 0.1 1 Static Drain - Source On-State Resistance : RDS(on) [W] Static Drain - Source On-State Resistance : RDS(on) [W] 100 VGS = -1.8V 10 1 0.1 0.0001 Drain Current : -ID [A] 0.001 0.01 0.1 1 Static Drain - Source On-State Resistance : RDS(on) [W] Static Drain - Source On-State Resistance : RDS(on) [W] Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 1 0.1 0.0001 0.1 1 100 VGS = -1.2V 10 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 1 0.1 0.0001 0.001 0.01 0.1 1 Drain Current : -ID [A] Drain Current : -ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 0.01 Fig.16 Static Drain - Source On - State Resistance vs. Drain Current(VI) 100 10 0.001 Drain Current : -ID [A] Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(V) VGS = -1.5V Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 7/10 2012.08 - Rev.A Data Sheet RV1C001ZP lElectrical characteristic curves Fig.18 Switching Characteristics Fig.17 Typical Capacitance vs. Drain - Source Voltage 100 10000 Ta=25ºC f=1MHz VGS=0V 10 Switching Time : t [ns] Capacitance : C [pF] 1000 Ciss Coss 1 0.1 0.01 Crss td(off) tf Ta=25ºC VDD= -10V VGS= -10V RG=10W 100 tr 10 td(on) 1 0.1 1 10 0.01 100 0.1 1 Drain Current : -ID [A] Drain - Source Voltage : -VDS [V] Fig.19 Source Current vs. Source Drain Voltage 1 Source Current : -IS [A] VGS=0V 0.1 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.01 0.0 0.5 1.0 1.5 Source-Drain Voltage : -VSD [V] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 8/10 2012.08 - Rev.A Data Sheet RV1C001ZP lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Fig.1-2 Switching Waveforms 9/10 2012.08 - Rev.A Data Sheet RV1C001ZP lDimensions (Unit : mm) b1 D E e1 L VML0806 L b e l1 A1 l2 A l1 b3 b2 Patterm of terminal position areas DIM A A1 b b1 D E e e1 L DIM b2 b3 l1 l2 MILIMETERS MIN MAX 0.33 0.39 0.00 0.05 0.10 0.20 0.45 0.55 0.55 0.65 0.75 0.85 0.35 0.50 0.15 0.25 MILIMETERS MIN MAX 0.25 0.70 0.30 0.90 INCHES MIN 0.013 0.000 0.004 0.018 0.022 0.030 MAX 0.015 0.002 0.008 0.022 0.026 0.033 0.014 0.020 0.006 0.010 INCHES MIN - MAX 0.010 0.028 0.012 0.035 Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 10/10 2012.08 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. 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