ROHM RV1C001ZP

RV1C001ZP
RV1C001ZP
Datasheet
Pch -20V -100mA Small Signal MOSFET
lOutline
VDSS
-20V
RDS(on) (Max.)
3.8W
ID
-100mA
PD
100mW
lFeatures
(3)
VML0806
(2)
(1)
lInner circuit
1) The world smallest Package (0806size).
(1) Source
(2) Gate
(3) Drain
2) Low voltage drive(-1.2V) makes this
device ideal for partable equipment.
3) Drive circuits can be simple.
*1 BODY DIODE
*2 ESD PROTECTION DIODE
4) Built-in G-S Protection Diode.
lPackaging specifications
Packaging
Taping
Reel size (mm)
lApplication
180
Tape width (mm)
Switching
8
Type
Basic ordering unit (pcs)
8,000
Taping code
T2L
Marking
RX
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-20
V
Continuous drain current
ID *1
100
mA
ID,pulse *2
400
mA
Gate - Source voltage
VGSS
10
V
Power dissipation
PD *3
100
mW
Tj
150
°C
Tstg
-55 to +150
°C
Pulsed drain current
Junction temperature
Range of storage temperature
lThermal resistance
Values
Parameter
Symbol
RthJA *3
Thermal resistance, junction - ambient
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© 2012 ROHM Co., Ltd. All rights reserved.
1/10
Unit
Min.
Typ.
Max.
-
-
1250
°C/W
2012.08 - Rev.A
Data Sheet
RV1C001ZP
lElectrical characteristics(Ta = 25°C)
Values
Parameter
Drain - Source breakdown
voltage
Symbol
Conditions
Unit
Min.
Typ.
Max.
V(BR)DSS
VGS = 0V, ID = -1mA
-20
-
-
V
Zero gate voltage drain current
IDSS
VDS = -20V, VGS = 0V
-
-
-1
mA
Gate - Source leakage current
IGSS
VGS = 10V, VDS = 0V
-
-
10
mA
VDS = -10V, ID = -100mA
-0.3
-
-1
V
VGS= -4.5V, ID= -100mA
-
2.5
3.8
VGS= -2.5V, ID= -50mA
-
3.4
5.1
VGS= -1.8V, ID= -20mA
-
4.8
8.2
VGS= -1.5V, ID= -10mA
-
6.0
13.2
VGS= -1.2V, ID= -1mA
-
10.0
40.0
VGS= -4.5V, ID= -100mA, Tj=125°C
-
3.3
6.6
VDS= -10V, ID= -100mA
120
-
-
Gate threshold voltage
Static drain - source
on - state resistance
Transconductance
VGS (th)
RDS(on) *4
gfs *4
W
mS
*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 Each therminal mounted on a recommended land
*4 Pulsed
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2/10
2012.08 - Rev.A
Data Sheet
RV1C001ZP
lElectrical characteristics(Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Input capacitance
Ciss
VGS = 0V
-
15.0
-
Output capacitance
Coss
VDS = -10V
-
4.0
-
Reverse transfer capacitance
Crss
f = 1MHz
-
1.5
-
VDD ⋍ -10V, VGS = -4.5V
-
46
-
tr *4
ID = -50mA
-
62
-
td(off) *4
RL = 200W
-
325
-
tf *4
RG = 10W
-
137
-
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on) *4
pF
ns
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Values
Parameter
Continuous source current
Symbol
IS *1
Pulsed source current
ISM *2
Forward voltage
VSD
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*4
Conditions
Unit
Min.
Typ.
Max.
-
-
-80
mA
-
-
-400
mA
-
-
-1.2
V
Ta = 25°C
VGS = 0V, Is = -100mA
3/10
2012.08 - Rev.A
Data Sheet
RV1C001ZP
lElectrical characteristic curves
Fig.2 Drain Current Derating Curve
120
1.2
100
1
Drain Current Dissipation
: ID/ID max. (%)
Power Dissipation : PD/PD max. [%]
Fig.1 Power Dissipation Derating Curve
80
60
40
20
0.8
0.6
0.4
0.2
0
0
0
50
100
150
-25
200
Junction Temperature : Tj [°C]
0.1
Drain Current : -ID [A]
Drain Current : -ID [A]
100
125
150
VGS= -1.5V
0.08
VGS= -2.5V
VGS= -1.5V
VGS= -1.8V
75
VGS= -4.5V
VGS= -4.0V
VGS= -4.5V
VGS= -4.0V
0.04
50
Fig.4 Typical Output Characteristics(II)
0.1
0.06
25
Junction Temperature : Tj [°C]
Fig.3 Typical Output Characteristics(I)
0.08
0
Ta=25ºC
Pulsed
0.02
Ta=25ºC
Pulsed
VGS= -2.5V
0.06
VGS= -1.8V
0.04
0.02
VGS= -1.2V
VGS= -1.2V
0
0
0
0.2
0.4
0.6
0.8
1
0
Drain - Source Voltage : -VDS [V]
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2
4
6
8
10
Drain - Source Voltage : -VDS [V]
4/10
2012.08 - Rev.A
Data Sheet
RV1C001ZP
lElectrical characteristic curves
Fig.6 Typical Transfer Characteristics
1
50
VDS= -10V
VGS = 0V
ID = -1mA
Pulsed
40
Drain Current : -ID [A]
Drain - Source Breakdown Voltage : -V(BR)DSS [V]
Fig.5 Breakdown Voltage
vs. Junction Temperature
30
20
10
0
0.1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.01
0.001
-50
0
50
100
150
0
0.5
1.5
2
2.5
Gate - Source Voltage : -VGS [V]
Junction Temperature : Tj [°C]
Fig.8 Transconductance vs. Drain Current
Fig.7 Gate Threshold Voltage
vs. Junction Temperature
1
1.5
VDS= -10V
VDS = -10V
ID = -100mA
Pulsed
1.2
Transconductance : gfs [S]
Gate Threshold Voltage : -VGS(th) [V]
1
0.9
0.6
0.3
0.01
0.01
0
-50
0
50
100
150
Junction Temperature : Tj [°C]
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0.1
Ta= -25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
0.1
1
Drain Current : -ID [A]
5/10
2012.08 - Rev.A
Data Sheet
RV1C001ZP
lElectrical characteristic curves
Fig.9 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.10 Static Drain - Source On - State
Resistance vs. Drain Current(I)
100
Static Drain - Source On-State Resistance
: RDS(on) [W]
Static Drain - Source On-State Resistance
: RDS(on) [W]
20
Ta=25ºC
18
16
ID= -1mA
14
12
ID= -100mA
10
8
6
4
2
0
0
2
4
6
8
10
10
1
0.1
0.0001
Gate - Source Voltage : -VGS [V]
0.001
0.01
0.1
1
Drain Current : -ID [A]
Fig.11 Static Drain - Source On - State
Resistance vs. Junction Temperature
Fig.12 Static Drain - Source On - State
Resistance vs. Drain Current(II)
100
4
3
2
VGS = -4.5V
ID = -100mA
Pulsed
1
0
-50 -25
0
25
50
75
100 125 150
Static Drain - Source On-State Resistance
: RDS(on) [W]
5
Static Drain - Source On-State Resistance
: RDS(on) [W]
VGS= -1.2V
VGS= -1.5V
VGS= -1.8V
VGS= -2.5V
VGS= -4.5V
Ta=25ºC
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
10
1
0.1
0.0001
0.001
0.01
0.1
1
Drain Current : -ID [A]
Junction Temperature : Tj [ºC]
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VGS = -4.5V
6/10
2012.08 - Rev.A
Data Sheet
RV1C001ZP
lElectrical characteristic curves
Fig.13 Static Drain-Source On-State
Resistance vs. Drain Current(III)
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
100
VGS = -2.5V
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
10
1
0.1
0.0001
0.001
0.01
0.1
1
Static Drain - Source On-State Resistance
: RDS(on) [W]
Static Drain - Source On-State Resistance
: RDS(on) [W]
100
VGS = -1.8V
10
1
0.1
0.0001
Drain Current : -ID [A]
0.001
0.01
0.1
1
Static Drain - Source On-State Resistance
: RDS(on) [W]
Static Drain - Source On-State Resistance
: RDS(on) [W]
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
1
0.1
0.0001
0.1
1
100
VGS = -1.2V
10
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
1
0.1
0.0001
0.001
0.01
0.1
1
Drain Current : -ID [A]
Drain Current : -ID [A]
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0.01
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(VI)
100
10
0.001
Drain Current : -ID [A]
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(V)
VGS = -1.5V
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
7/10
2012.08 - Rev.A
Data Sheet
RV1C001ZP
lElectrical characteristic curves
Fig.18 Switching Characteristics
Fig.17 Typical Capacitance
vs. Drain - Source Voltage
100
10000
Ta=25ºC
f=1MHz
VGS=0V
10
Switching Time : t [ns]
Capacitance : C [pF]
1000
Ciss
Coss
1
0.1
0.01
Crss
td(off)
tf
Ta=25ºC
VDD= -10V
VGS= -10V
RG=10W
100
tr
10
td(on)
1
0.1
1
10
0.01
100
0.1
1
Drain Current : -ID [A]
Drain - Source Voltage : -VDS [V]
Fig.19 Source Current
vs. Source Drain Voltage
1
Source Current : -IS [A]
VGS=0V
0.1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.01
0.0
0.5
1.0
1.5
Source-Drain Voltage : -VSD [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
8/10
2012.08 - Rev.A
Data Sheet
RV1C001ZP
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
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Fig.1-2 Switching Waveforms
9/10
2012.08 - Rev.A
Data Sheet
RV1C001ZP
lDimensions (Unit : mm)
b1
D
E
e1
L
VML0806
L
b
e
l1
A1
l2
A
l1
b3
b2
Patterm of terminal position areas
DIM
A
A1
b
b1
D
E
e
e1
L
DIM
b2
b3
l1
l2
MILIMETERS
MIN
MAX
0.33
0.39
0.00
0.05
0.10
0.20
0.45
0.55
0.55
0.65
0.75
0.85
0.35
0.50
0.15
0.25
MILIMETERS
MIN
MAX
0.25
0.70
0.30
0.90
INCHES
MIN
0.013
0.000
0.004
0.018
0.022
0.030
MAX
0.015
0.002
0.008
0.022
0.026
0.033
0.014
0.020
0.006
0.010
INCHES
MIN
-
MAX
0.010
0.028
0.012
0.035
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
10/10
2012.08 - Rev.A
Notice
Notes
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The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
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R1120A