Reliability Report

AOS Semiconductor
Product Reliability Report
AOTF266L,
rev B
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
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This AOS product reliability report summarizes the qualification result for AOTF266L. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AOTF266L passes AOS quality
and reliability requirements. The released product will be categorized by the process family and
be monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I.
II.
III.
IV.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
I. Product Description:
The AOTF266L uses Trench MOSFET technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Both conduction and switching power losses are
minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal
for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
-RoHS Compliant
-Halogen Free
Details refer to the datasheet.
II. Die / Package Information:
Process
Package Type
Lead Frame
Die Attach
Bond wire
Mold Material
Moisture Level
AOTF266L
Standard sub-micron
60V N channel process
TO220F
Bare Cu
Soft solder
Al wire
Epoxy resin with silica filler
Up to Level 1
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III. Result of Reliability Stress for AOTF266L
Test Item
Test Condition
Time
Point
MSL
Precondition
168hr 85°c
/85%RH +3 cycle
reflow@260°c
Temp = 150°c ,
Vgs=100% of
Vgsmax
-
12 lots
2541pcs
0
JESD22A113
168hrs
500 hrs
1000 hrs
3 lots
4 lots
5 lots
924pcs
0
JESD22A108
HTRB
Temp = 150°c ,
Vds=80% of
Vdsmax
168hrs
500 hrs
1000 hrs
(Note A*)
3 lots
4 lots
5 lots
77 pcs / lot
924pcs
0
JESD22A108
HAST
130°c , 85%RH,
33.3 psi, Vgs =
100% of Vgs max
96 hrs
(Note A*)
9 lots
77 pcs / lot
693pcs
0
JESD22A110
Pressure Pot
121°c , 29.7psi,
RH=100%
96 hrs
(Note A*)
12 lots
77 pcs / lot
924pcs
0
JESD22A102
(Note A*)
77 pcs / lot
0
JESD22A104
HTGB
Temperature
Cycle
-65°c to 150°c ,
air to air,
250 / 500
cycles
Lot
Attribution
12 lots
(Note A*)
Total
Sample size
Number
of
Failures
924pcs
Reference
Standard
77 pcs / lot
Note A: The reliability data presents total of available generic data up to the published date.
IV. Reliability Evaluation
FIT rate (per billion): 3.05
MTTF = 37419 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size of the selected product (AOTF266L). Failure Rate Determination is based on JEDEC
Standard JESD 85. FIT means one failure per billion hours.
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9
Failure Rate = Chi x 10 / [2 (N) (H) (Af)]
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= 1.83 x 10 / [2x (6x77x168 +8x77x500 +10x77x1000) x259] = 3.05
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MTTF = 10 / FIT = 3.28 x 10 hrs = 37419 years
Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
Af
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
130 deg C
150 deg C
259
87
32
13
5.64
2.59
1
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
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