AOS Semiconductor Product Reliability Report AOI478, rev C Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOI478. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOI478 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AOI478 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. -RoHS Compliant -Halogen Free Details refer to the datasheet. II. Die / Package Information: AOI478 Standard sub-micron 100V N channel MOSFET Package Type TO251A Lead Frame Bare Cu Die Attach Soft solder Bond Al & Au wire Mold Material Epoxy resin with silica filler Moisture Level Up to Level 1 * Note * based on info provided by assembler and mold compound supplier Process 2 III. Result of Reliability Stress for AOI478 Test Item Test Condition Time Point MSL Precondition 168hr 85°c /85%RH +3 cycle reflow@260°c Temp = 150°c , Vgs=100% of Vgsmax - HTGB HTRB Temp = 150°c , Vds=80% of Vdsmax HAST Pressure Pot Temperature Cycle 168hrs 500 hrs 1000 hrs 168hrs 500 hrs 1000 hrs Lot Attribution Total Sample size Number of Failures Reference Standard 15 lots 2739pcs 0 JESD22A113 3 lots 6 lots 5 lots (Note A*) 1078pcs 0 JESD22A108 3 lots 6 lots 5 lots (Note A*) 1078pcs 0 JESD22A108 660pcs 0 JESD22A110 0 JESD22A102 0 JESD22A104 77 pcs / lot 77 pcs / lot 130 +/- 2°c , 85%RH, 33.3 psi, Vgs = 100% of Vgs max 121°c , 29.7psi, RH=100% 100 hrs 12 lots 96 hrs (Note A*) 12lots 55 pcs / lot 924pcs (Note A*) 77 pcs / lot -65°c to 150°c , air to air, 250 / 500 cycles 15 lots (Note A*) 1155pcs 77 pcs / lot Note A: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 3 MTTF = 42154 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AOI478). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 x 10 / [2x (6x77x168 +12x77x500 +10x77x1000) x258] = 3 9 8 MTTF = 10 / FIT = 3.69 x 10 hrs = 42154 years Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 3