UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT80P06 Power MOSFET 80A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. The UTC UTT80P06 is suitable for low voltage and high speed switching applications FEATURES * RDS(ON)=0.021Ω @ VGS=-10V, ID=-64A * High Switching Speed ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT80P06L-TA3-T UTT80P06G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube 1 of 3 QW-R502-672.a UTT80P06 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT -60 V ±20 V -80 A TC=25°C ID Continuous Drain Current TC=100°C -64 A Pulsed TC=25°C IDM -320 A 823 mJ Single Pulsed EAS Avalanche Energy Repetitive EAR 34 mJ Power Dissipation TC=25°C PD 313 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS THERMAL DATA PARAMETER Junction to Case Junction to Ambient SYMBOL θJC θJA RATINGS 0.4 62 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS ID=-250µA, VGS=0V VDS=-60V, VGS=0V, TJ=25°C VDS=-60V, TC=150°C VGS=+20V, VDS=0V VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-5.5mA Static Drain-Source On-State Resistance RDS(ON) ID=-64A, VGS=-10V DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=-25V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDD=-48V, ID=-80A, VGS= -10V Gate to Source Charge QGS VDD=-48V, ID=-80A Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=-30V, ID=-64A, RG=1Ω, VGS=-10V Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS TC=25°C Maximum Body-Diode Pulsed Current ISM TC=25°C Drain-Source Diode Forward Voltage VSD IF=-80A, VGS=0V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -0.1 -10 -1 -100 +100 -100 V µA µA nA nA -3 -4 0.021 0.023 V Ω 4026 5033 1252 1565 437 546 pF pF pF 115 27.4 50 24 18 56 30 173 41 75 36 27 84 45 nC nC nC ns ns ns ns -1.2 -80 -320 -1.6 A A V -60 -2.1 2 of 3 QW-R502-672.a UTT80P06 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-672.a