UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT36P03 Power MOSFET -30V, -36A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT36P03 is a P-channel Power MOSFET, using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. The UTC UTT36P03 is suitable for low voltage ,high speed switching applications FEATURES * RDS(ON)<38mΩ @ VGS=-10V, ID=-36A * High Switching Speed ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UTT36P03L-TN3-R UTT36P03G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 G Pin Assignment 2 3 D S Packing Tape Reel 1 of 3 QW-R502-775.a UTT36P03 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT VDSS -30 V VGSS ±20 V -36 A Continuous ID Drain Current Pulsed IDM -144 A Avalanche Current IAR -36 A Avalanche Energy Single Pulsed EAS 36 mJ Power Dissipation PD 1.2 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55+~150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. 2. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 3. TJ=25°C, VDD=-25V, L=0.1mH, RG=25Ω, IAS=-36A. ELECTRICAL CHARACTERISTICS PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Static Drain-Source On-State Resistance RDS(ON) TEST CONDITIONS ID=-250µA, VGS=0V VDS=-30V VGS=+20V, VDS=0V VGS=-20V, VDS=0V -30 ID=-250µA VGS=-10V, ID=-36A VGS=-4.5V, ID=-10A -1 DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=-25V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=-10V, VDD=-25V, ID=-36A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=-25V, ID=-36A RG=25Ω, VGS=-10V Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=-36A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -1 +100 -100 -3 38 58 V μA nA nA V mΩ mΩ 3200 350 205 pF pF pF 17 5 3 6 16 26 10 nC nC nC ns ns ns ns -36 -144 -1.2 A A V 2 of 3 QW-R502-775.a UTT36P03 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-775.a