NTE2675 Silicon NPN Transistor High Voltage High Speed Switch TO3PN Type Package Features: D High Reliability D High Voltage, High Speed Switching Applications: D Switching Regulators D Ultrasonic Generators D High Frequency Inverters D General Purpose Power Amplifiers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Collector−Emitter Voltage (Open Base), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter−Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector−Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0 800 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 900 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 1mA, IB = 0 10 − − V Collector−Emitter Saturation Voltage VCE(sat) IC = 2A, IB = 400mA − − 1.0 V Base−Emitter Saturation Voltage VBE(sat) IC = 2A, IB = 400mA − − 1.5 V Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cut−Off Current ICBO VCB = 900V, IE = 0 − − 1.0 mA Emitter Cut−Off Current IEBO VEB = 10V, IC = 0 − − 1.0 mA DC Current Gain hFE IC = 2A, VCE = 5V 10 − − Turn−On Time ton − − 1.0 μs Storage Time tstg IC = 3A, IB1 = 600mA, IB2 = 1.2A, RL = 100Ω, PW = 20μs, Duty ≤ 2% − − 4.0 μs − − 0.8 μs Fall Time tf .614 (15.6) .189 (4.8) .787 (20.0) .590 (15.0) .138 (3.5) Dia .889 (22.6) B .215 (5.45) C E