5B WFJ5N6 5N65B Silicon N-Channel MOSFET Features � 4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Ultra-low Gate charge(Typical13.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction. Absolute Maximum Ratings Symbol VDSS Parameter Value Units Drain Source Voltage 650 V Continuous Drain Current(@Tc=25℃) 4.5 A Continuous Drain Current(@Tc=100℃) 3.1 A 16 A ±30 V ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 240 mJ EAR Repetitive Avalanche Energy (Note1) 10 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 5.5 V/ns Total Power Dissipation(@Tc=25℃) 100 W Derating Factor above 25℃ 0.80 W/℃ TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ TL Channel Temperature 300 ℃ PD Thermal Characteristics Symbol Parameter Value Min Typ Max Units RQJC Thermal Resistance , Junction -to -Case - - 1.25 ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W Rev.A May.2012 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. 5B WFJ5N6 5N65B Electrical Characteristics(Tc=25℃) Characteristics Symbol Gate leakage current Gate-source breakdown voltage Type Max Unit VGS=±30V,VDS=0V - - ±100 nA V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V VDS=650V,VGS=0V - - 10 µA VDS=500V,Tc=125℃ - - 100 µA - 0.65 - V/℃ IDSS △BVDSS/ △TJ coefficient Drain -source breakdown voltage Min IGSS Drain Cut -off current Breakdown voltage Temperature Test Condition ID=250 µA,Referenced to 25℃ V(BR)DSS ID=250 µA,VGS=0V 650 - - V Gate threshold voltage VGS(th) VDS=VGS,ID=250 µA 2 - 4 V Drain -source ON resistance RDS(ON) VGS=10V,ID=2.25A - 1.8 2.5 Ω Forward Transconductance gfs VDS=40V,ID=2.25A - 4.7 - S Input capacitance Ciss VDS=25V, - 490 642 Reverse transfer capacitance Crss VGS=0V, - 9 12 Output capacitance Coss f=1MHz - 95 124 VDD=300V, - 49 111 pF Turn-on Rise time tr Turn-on delay time Td(on) ID=4.5A - 16 42 tf RG=25Ω - 37 84 - 46 102 - 13.3 19 - 3.6 - - 4.9 - Min Type Max Unit Switching time ns Turn-off Fall time Turn-off delay time (Note4,5) Td(off) Total gate charge(gate-source VDD=480V, Qg plus gate-drain) VGS=10V, nC Gate-source charge Qgs Gate-drain("miller") Charge Qgd ID=4.5A (Note,5) Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Continuous drain reverse current IDR - - - 4.5 A Pulse drain reverse current IDRP - - - 16 A Forward voltage(diode) VDSF IDR=4.5A,VGS=0V - - 1.4 V Reverse recovery time trr IDR=4.5A,VGS=0V, - 330 - ns Reverse recovery charge Qrr dIDR /dt =100 A /µs - 2.67 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=25mH IAS=4.5A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤4.5A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, keep you advance 5B WFJ5N6 5N65B Fig.1 On-State characteristics Fig.2 Transfer Current characteristics Fig.3 On-Resistance Variation vs Drain Fig.4 Body Diode Forward Voltage Current and Gate Voltage Variation with Source Current and Temperature Fig.5 Capacitance Characteristics Fig.6 Gate Charge Characteristics 3/7 Steady, keep you advance 5B WFJ5N6 5N65B Fig.7 Breakdown Voltage Variation vs.Temperature Fig.8 On-Resistance Variation vs Junction Temperature Fig.9 Maximum Safe Operation Area Fig.10 Maximum Drain Current vs Case Temperature Fig.11 Transient Thermal Response Curve 4/7 Steady, keep you advance 5B WFJ5N6 5N65B Fig.12 Gate Test Circuit & Waveform Fig.13 Resistive Switching Test Circuit & Waveform Fig.14 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Steady, keep you advance 5B WFJ5N6 5N65B Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, keep you advance 5B WFJ5N6 5N65B 262 Package Dimension TOTO-262 Unit:mm 7/7 Steady, keep you advance