WFD830B Silicon N-Channel MOSFET Features � 5A,500V, RDS(on)(Max1.6Ω)@VGS=10V � Ultra-low Gate charge(Typical 18nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS Parameter Value Units 500 V Continuous Drain Current(@Tc=25℃) 5 A Continuous Drain Current(@Tc=100℃) 2.9 A 20 A ±30 V Drain Source Voltage ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 300 mJ EAR Repetitive Avalanche Energy (Note1) 7.3 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4.5 V/ ns 61 W 0.49 W/℃ -55~150 ℃ 300 ℃ Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ,Tstg TL Junction and Storage Temperature Channel Temperature Thermal Characteristics Symbol Parameter Value Min Typ Max Units RQJC Thermal Resistance , Junction -to -Case - - 2.05 ℃/W RQCS Thermal Resistance , Case-to-Sink - 0.5 - ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W Rev.A Feb.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WFD830B Electrical Characteristics(Tc=25℃) Characteristics Symbol Gate leakage current Gate-source breakdown voltage Test Condition Min Type Max Unit IGSS VGS=±30V,VDS=0V - - ±100 nA V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V VDS=500V,VGS=0V - - 1 µA 10 µA Drain cut -off current IDSS VDS=400V,TC=125℃ Drain -source breakdown voltage V(BR)DSS Breakdown voltage Temperature △BVDSS/ ID=250 µA,VGS=0V 500 - - V - 0.5 - V/℃ ID=250µA,Referenced Coefficient △TJ to 25℃ Gate threshold voltage VGS(th) VDS=VGS,ID=250 µA 3 - 4.5 V Drain -source ON resistance RDS(ON) VGS=10V,ID=2.5A - 1.43 1.6 Ω Forward Transconductance gfs VDS=40V,ID=2.5A - 5.2 - S Input capacitance Ciss VDS=25V, - 480 625 Reverse transfer capacitance Crss VGS=0V, - 15 20 Output capacitance Coss f=1MHz - 80 105 VDD=250V, - 46 100 ID=5A - 12 35 RG=25Ω - 48 105 - 50 110 - 18 24 - 2.2 - - 9.7 - Min Type Max Unit Rise time tr Turn-on time ton Switching time pF ns Fall time tf Turn-off time (Note4,5) toff Total gate charge(gate-source VDD=400V, Qg plus gate-drain) VGS=10V, nC Gate-source charge Qgs Gate-drain("miller") Charge Qgd ID=5A (Note4,5) Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Continuous drain reverse current IDR - - - 5 A Pulse drain reverse current IDRP - - - 20 A Forward voltage(diode) VDSF IDR=5A,VGS=0V - - 1.4 V Reverse recovery time trr IDR=5A,VGS=0V, - 263 - ns Reverse recovery charge Qrr dIDR / dt =100 A / µs - 1.9 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=21.5mH IAS=5A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤5A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, keep you advance WFD830B Fig.1 On State Characteristics Fig.3 On-Resistance Variation vs Drain Current And Gate Voltage Fig.5 Capacitance Characteristis Fig.2 Transfer Characteristics Fig.4 Body Diode Forward Voltage Variation with Source Current and Temperature Fig.6 Gate Charge Characteristics 3/7 Steady, keep you advance WFD830B Fig.7 Breakdown Voltage Variation Vs Temperature Fig.9 Maximum Safe Operation Area Fig.8 On-Resistance Variation vs.Temperature Fig.10 Maximum Drain Current vs Case temperature Fig.11 Transient thermal Response Curve 4/7 Steady, keep you advance WFD830B Fig.12 Gate Test circuit & Waveform Fig.13 Resistive Switching Test Circuit & Waveform Fig.14 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Steady, keep you advance WFD830B Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, keep you advance WFD830B DPAK Package Dimension Unit:mm 7/7 Steady, keep you advance