PNP BCY70 – BCY71 – BCY72 SILICON PLANAR EPITAXIAL TRANSISTORS The BCY70 - BCY79 – BCY72 are PNP transistors mounted in TO-18 metal. General purpose industrial applications. Low current and low voltage. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value -40 -45 -25 -50 -45 -25 -5 -200 -200 -100 V mA mA mA 390 mW 200 °C Storage Temperature range -65 to +150 °C Operating ambient Temperature -65 to +150 °C Value Unit VCEO Collector-Emitter Voltage (IB =0) VCEB Collector-Emitter Voltage (IE =0) VEBO IC ICM IBM Emitter-Base Voltage (IC =0) Collector Current Peak Collector Current Peak Base Current PD Total Power Dissipation TJ Junction Temperature TStg Tamb BCY70 BCY71 BCY72 BCY70 BCY71 BCY72 Unit @ Tamb = 25°C V V THERMAL CHARACTERISTICS Symbol Ratings RthJ-a Thermal Resistance Junction-ambient 500 °C/W RthJ-c Thermal Resistance, Junction-case 150 °C/W COMSET SEMICONDUCTORS 1/4 PNP BCY70 – BCY71 – BCY72 ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specified Symbol ICES ICES IEBO Ratings Test Condition(s) Collector Cutoff Current VCB = -20 V, VBE = 0 V Collector Cutoff Current VCB = -50 V VBE = 0 V,Tj = 150 °C VCB = -45 V VBE = 0V,Tj = 150 °C VCB = -25 V VBE = 0 V,Tj = 150 °C Emitter Cutoff Current Collector-Emitter saturation Voltage IC = -50 mA, IB = -5 mA IC = -10 mA, IB = -1 mA VBE(SAT) Typ Max Unit BCY70 BCY71 BCY72 - - -10 -100 -100 nA BCY70 - - -0.5 BCY71 - - -10 BCY72 - - -10 - - -500 - - -0.25 - - -0.5 BCY70 BCY71 BCY72 BCY70 BCY71 BCY72 BCY70 BCY71 BCY72 BCY70 BCY71 BCY72 BCY70 BCY71 BCY78 VBE = -5.0 V, IC = 0 IC = -10 mA, IB = -1 mA VCE(SAT) Min Base-Emitter Saturation Voltage IC = -50 mA, IB = -5 mA BCY70 µA nA V -0.6 - -0.9 - - -1.2 BCY71 BCY72 Unit hFE DC Current Gain 16/11/2012 IC = -0.1mA VCE = -1 V IC = -1 mA VCE = -1 V IC = -10 mA VCE = -1 V IC = -50 mA VCE = -1 V Min Max Min Max Min Max 40 - 80 - - - 45 - 90 40 - 50 - 100 600 50 - 15 - 15 - - - COMSET SEMICONDUCTORS 2/4 PNP BCY70 – BCY71 – BCY72 ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specified Symbol hfe fT NF Ratings Small-Signal Current Gain Transition frequency Noise Figure Test Condition(s) IC = -1 mA, VC E= -10 V f = 1kHz IC = -0.1 mA, VCE = -20 V f = 10.7 MHz IC = -10 mA, VCE = -20 V f = 100 MHz IC = -0.1 mA, VCE = -5 V f = 10 to 10 kHz Rg= 2 kΩ td Delay time tr Rise time ts Storage time ICon = -10 mA IBon = -IBoff = -1mA VEE = 3 V tf Fall time ton Turn on time toff Turn off time CC Collector-Base capacitance IE = 0 ,VCB = -10 V f = 1MHz CE Emitter-Base capacitance IC = 0 ,VEB = -1 V f = 1MHz 16/11/2012 Min Typ Max Unit - BCY71 only 100 - 400 BCY71 15 - - BCY70 BCY71 BCY72 BCY71 BCY70 BCY72 BCY70 BCY72 BCY70 BCY72 BCY70 BCY72 BCY70 BCY72 BCY70 BCY72 BCY70 BCY72 BCY70 BCY71 BCY72 BCY70 BCY71 BCY72 250 - - 200 - - - - 2 - - 6 - - 35 - - 35 - - 350 COMSET SEMICONDUCTORS MHz dB ns - - 80 - - 65 - - 420 - - 8 pF - - 8 pF 3/4 PNP BCY70 – BCY71 – BCY72 ECHANICAL DATA CASE TO-18 (PNP) DIMENSIONS (mm) min A B C D E F G H I L max 12.7 0.9 2.54 45° Pin 1 : Pin 2 : Pin 3 : Case : 0.49 5.3 4.9 5.8 1.2 1.16 - emitter base Collector Collector Revised Ocobert 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 16/11/2012 [email protected] COMSET SEMICONDUCTORS 4/4