Application Note 4 NJG1133MD7 1.9GHz / 900MHz /1.8GHz Bands Application 4-1 Summary The characterisitics of Band1, 8, 3 have evaluated as follows. The evaluation circuit structure and measured data are reviewed. 4-2-1 Measurement data of assembled evaluation board DC Characteristics General conditions : VDD=2.85V, Ta=+25oC Parameter Symbol Condition Measurement Data Units VDD 2.85 V Control Voltage 1 (High) VCTL1(H) 1.8 V Control Voltage 1 (Low) VCTL1(L) 0 V Control Voltage 2 (High) VCTL2(H) 1.8 V LNA Supply Voltage Control Voltage 2 (Low) VCTL2(L) 0 V Control Voltage 3 (High) VCTL3(H) 1.8 V Control Voltage 3 (Low) LNA Operating Current 1 (1.9GHz Band High Gain Mode) LNA Operating Current 2 (900MHz Band High Gain Mode) LNA Operating Current 3 (1.8GHz Band High Gain Mode) LNA Operating Current 4 (Low Gain Mode) Control Current 1 VCTL3(L) 0 V IDD1 VCTL1=0V, VCTL2=0V, VCTL3=1.8V 2.57 mA IDD2 VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V 2.27 mA IDD3 VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V 2.51 mA IDD4 VCTL3=0V 34.5 uA ICTL1 VCTL1=1.8V 5.5 uA Control Current 2 ICTL2 VCTL2=1.8V 5.6 uA Control Current 3 ICTL3 VCTL3=1.8V 5.6 uA 1／19 Application Note 4 NJG1133MD7 4-2-2 Measurement data of assembled evaluation board RF Characteristics 1 (1.9GHz Band High Gain Mode) General condition : VDD=2.85V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V, fRF=1920~1980MHz, Ta=+25oC, Zs=Zl=50ohm, with application circuit Parameter Condition Exclude Input&Output PCB, Connector Losses (0.45dB) Exclude PCB, Connector Losses (0.09dB) Small Signal Gain 1 Noise Figure 1 Input Power 1dB Compression 1 Input 3rd Order Intercept Point 1 RF IN VSWR 1 f1=fRF, f2=fRF+100kHz, Pin=-30dBm RF OUT VSWR 1 Symbol Measurement Data Units Gain 1 16.5 ~ 16.9 dB NF 1 1.13 ~ 1.39 dB P-1dB(IN)_1 -9.3 ~ -9.1 dBm IIP3_1 -1.3 ~ -0.9 dBm VSWRi_1 1.70 ~ 1.86 - VSWRo_1 2.17 ~ 2.44 - Symbol Measurement Data Units Gain 2 -3.9 ~ -3.6 dB NF 2 3.8 ~ 4.4 dB P-1dB(IN)_2 +15.2 ~ +15.7 dBm IIP3_2 +12.3 ~ +12.6 dBm VSWRi_2 1.09 ~ 1.27 - VSWRo_2 1.41 ~ 1.57 - RF Characteristics 2 (1.9GHz Band Low Gain Mode) General condition : VDD=2.85V, VCTL1=0V, VCTL2=0V, VCTL3=0V, fRF=1920~1980MHz, o Ta=+25 C, Zs=Zl=50ohm, with application circuit Parameter Small Signal Gain 2 Noise Figure 2 Input Power 1dB Compression 2 Input 3rd Order Intercept Point 2 RF IN VSWR 2 RF OUT VSWR 2 Condition Exclude Input&Output PCB, Connector Losses (0.45dB) Exclude PCB, Connector Losses (0.09dB) f1=fRF, f2=fRF+100kHz, Pin=-20dBm 2／19 Application Note 4 NJG1133MD7 4-2-3 Measurement data of assembled evaluation board RF Characteristics 3 (900MHz Band High Gain Mode) General condition : VDD=2.85V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V, fRF=925~960MHz, Ta=+25oC, Zs=Zl=50ohm, with application circuit Parameter Condition Exclude Input&Output PCB, Connector Losses (0.22dB) Exclude PCB, Connector Losses (0.06dB) Small Signal Gain 3 Noise Figure 3 Input Power 1dB Compression 3 Input 3rd Order Intercept Point 3 RF IN VSWR 3 f1=fRF, f2=fRF+100kHz, Pin=-30dBm RF OUT VSWR 3 Symbol Measurement Data Units Gain 3 16.1 ~ 16.2 dB NF 3 1.20 ~ 1.30 dB P-1dB(IN)_3 -7.8 ~ -7.3 dBm IIP3_3 +0.6 ~ +1.3 dBm VSWRi_3 1.78 ~ 1.96 - VSWRo_3 1.48 ~ 1.66 - Symbol Measurement Data Units Gain 4 -4.0 ~ -3.9 dB NF 4 2.7 ~ 4.9 dB P-1dB(IN)_4 +17.6 ~ +18.0 dBm IIP3_4 +11.6 ~ +13.3 dBm RF Characteristics 4 (900MHz Band Low Gain Mode) General condition : VDD=2.85V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V, fRF=925~960MHz, o Ta=+25 C, Zs=Zl=50ohm, with application circuit Parameter Small Signal Gain 4 Noise Figure 4 Input Power 1dB Compression 4 Input 3rd Order Intercept Point 4 RF IN VSWR 4 RF OUT VSWR 4 Condition Exclude Input&Output PCB, Connector Losses (0.22dB) Exclude PCB, Connector Losses (0.06dB) f1=fRF, f2=fRF+100kHz, Pin=-20dBm VSWRi_4 1.75 ~ 1.81 - VSWRo_4 2.72 ~ 2.81 - 3／19 Application Note 4 4-2-4 NJG1133MD7 Measurement data of assembled evaluation board RF Characteristics 5 (1.8GHz Band High Gain Mode) General condition : VDD=2.85V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V, fRF=1805~1880MHz, Ta=+25oC, Zs=Zl=50ohm, with application circuit Parameter Condition Exclude Input&Output PCB, Connector Losses (0.41dB) Exclude PCB, Connector Losses (0.10dB) Small Signal Gain 5 Noise Figure 5 Input Power 1dB Compression 5 Input 3rd Order Intercept Point 5 RF IN VSWR 5 f1=fRF, f2=fRF+100kHz, Pin=-30dBm RF OUT VSWR 5 Symbol Measurement Data Units Gain 5 15.7 ~ 15.9 dB NF 5 1.35 ~ 1.41 dB P-1dB(IN)_5 -7.8 ~ -7.1 dBm IIP3_5 +1.0 ~ +1.8 dBm VSWRi_5 1.76 ~ 1.93 - VSWRo_5 1.78 ~ 1.79 - Symbol Measurement Data Units Gain 6 -4.0 ~ -3.9 dB NF 6 3.9 ~ 4.7 dB P-1dB(IN)_6 +17.4 ~ +17.7 dBm IIP3_6 +13.3 ~ +14.1 dBm VSWRi_6 1.67 ~ 1.72 - VSWRo_6 2.14 ~ 2.24 - Symbol Measurement Data Units RF Characteristics 6 (1.8GHz Band Low Gain Mode) General condition : VDD=2.85V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V, fRF=1805~1880MHz, o Ta=+25 C, Zs=Zl=50ohm, with application circuit Parameter Small Signal Gain 6 Noise Figure 6 Input Power 1dB Compression 6 Input 3rd Order Intercept Point 6 RF IN VSWR 6 Condition Exclude Input&Output PCB, Connector Losses (0.41dB) Exclude PCB, Connector Losses (0.10dB) f1=fRF, f2=fRF+100kHz, Pin=-16dBm RF OUT VSWR 6 RF Characteristics 7 General condition : VDD=2.85V, Ta=+25oC, Zs=Zl=50ohm, with application circuit Parameter Condition Gain Dynamic Range1 (1.9GHz Band) (High Gain S21)-(Low Gain S21), f=1920~1950MHz, VCTL1=0V, VCTL2=0V, VCTL3=0V or 1.8V GDR_1 20.1 ~ 20.5 dB Gain Dynamic Range2 (900MHz Band) (High Gain S21)-(Low Gain S21), f=925~960MHz, VCTL1=1.8V, VCTL2=0V, VCTL3=0V or 1.8V GDR_2 20.0 ~ 20.2 dB Gain Dynamic Range3 (1.8GHz Band) (High Gain S21)-(Low Gain S21), f=1805~1880MHz, VCTL1=0V, VCTL2=1.8V, VCTL3=0V or 1.8V GDR_3 19.6 ~ 19.8 dB 4／19 Application Note 4 NJG1133MD7 4-3 Pin configuration (Top View) GND 11 RFIN3 10 9 GND GND 8 RFOUT3 RFIN2 13 12 7 1.8GHz Band Bias Circuit RFOUT2 RFIN1 13 6 1.9GHz Band Bias Circuit Logic Circuit 900MHz Band VCTL3 14 5 Bias Circuit GND 1 VCTL2 2 RFOUT1 VCTL1 3 GND 4 VCTL terminal function VCTL1, VCTL2：Band Select (1.9GHz Band or 900MHz Band or 1.8GHz Band) VCTL3：RX ATT Select (High Gain mode or Low Gain mode) 4-4 Truth table VCTL1 Control Voltage VCTL2 VCTL3 1.9GHz Band State 900MHz Band 1.8GHz Band (Band Sel1) (Band Sel2) (RX ATT) LNA IDD Bypass LNA IDD Bypass LNA IDD Bypass L L H H L L H H L L L L H H H H L H L H L H L H OFF ON OFF OFF OFF OFF OFF OFF ON OFF ON OFF ON OFF ON OFF OFF OFF OFF ON OFF OFF OFF OFF ON OFF ON OFF ON OFF ON OFF OFF OFF OFF OFF OFF ON OFF ON ON OFF ON OFF ON OFF ON OFF “L”=0～0.3V、“H”=1.36～1.9V 5／19 Application Note 4 NJG1133MD7 4-5-1 Typical characteristics (1.9GHz Band High Gain Mode) Condition: Ta=+25oC, VDD=2.85V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V Band1(1.9GHz) @High Gain Pout vs. Pin Band1(1.9GHz) @High Gain Gain, IDD vs. Pin (f=1950MHz) (f=1950MHz) 20 10 8 5 Gain (dB) Pout (dBm) 0 -5 -10 Pout -15 15 6 10 4 IDD 5 -20 IDD (mA) Gain 2 -25 P-1dB(IN)=-9.3dBm P-1dB(IN)=-9.3dBm -30 -40 -30 -20 -10 0 0 -40 10 -20 -10 0 10 Pin (dBm) Pin (dBm) Band1(1.9GHz) @High Gain Pout, IM3 vs. Pin Band1(1.9GHz) @High Gain OIP3, IIP3 vs. frequency (f1=1.9~2.0GHz, f2=f1+100kHz, Pin=-30dBm) (f1=1950MHz, f2=f1+100kHz) 20 18 5 17 4 0 Pout OIP3 16 3 -40 -60 IM3 15 2 14 1 13 0 IIP3 12 -1 11 -2 IIP3 (dBm) -20 OIP3 (dBm) Pout, IM3 (dBm) 0 -30 -80 IIP3=-1.2dBm -100 -40 -30 -20 -10 0 10 1.90 10 1.94 1.96 1.98 Pin (dBm) frequency (GHz) Band1(1.9GHz) @High Gain NF, Gain vs. frequency Band1(1.9GHz) @High Gain k factor vs. frequency 20 20 3.5 -3 2.00 (f=50MHz~20GHz) (f=1.8~2.1GHz) 4 18 Gain 16 2.5 14 2 12 NF 1.5 10 1 8 0.5 15 k factor 3 Gain (dB) Noise Figure (dB) 1.92 10 5 6 (Exclude PCB, Connector Losses) 0 1.80 1.85 1.90 1.95 2.00 frequency (GHz) 2.05 4 2.10 0 0 5 10 15 20 frequency (GHz) 6／19 Application Note 4 NJG1133MD7 4-5-2 Typical characteristics (1.9GHz Band High Gain Mode) Condition: Ta=+25oC, VDD=2.85V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 S21, S12 (f=50MHz~20GHz) (f=50MHz~20GHz) 7／19 Application Note 4 NJG1133MD7 4-5-3 Typical characteristics (1.9GHz Band Low Gain Mode) Condition: Ta=+25oC, VDD=2.85V, VCTL1=0V, VCTL2=0V, VCTL3=0V Band1(1.9GHz) @Low Gain Pout vs. Pin Band1(1.9GHz) @Low Gain Gain, IDD vs. Pin (f=1950MHz) (f=1950MHz) 20 0 100 Gain 10 -5 80 -10 60 -10 -20 IDD -15 40 IDD (uA) Gain (dB) Pout (dBm) 0 Pout -30 -20 20 -40 P-1dB(IN)=+15.4dBm -50 -40 -30 -20 -10 0 10 P-1dB(IN)=+15.4dBm -25 -40 20 0 -30 -20 Pin (dBm) -10 0 10 20 Pin (dBm) Band1(1.9GHz) @Low Gain OIP3, IIP3 vs. frequency Band1(1.9GHz) @Low Gain Pout, IM3 vs. Pin (f1=1.9~2.0GHz, f2=f1+100kHz, Pin=-20dBm) (f1=1950MHz, f2=f1+100kHz) 20 14 15 13 14 -20 Pout -40 -60 13 IIP3 11 12 10 11 OIP3 9 10 8 9 7 8 IM3 -80 IIP3 (dBm) 12 OIP3 (dBm) Pout, IM3 (dBm) 0 IIP3=+12.5dBm -100 -40 -30 -20 -10 0 10 6 1.9 20 1.94 1.96 1.98 Pin (dBm) frequency (GHz) Band1(1.9GHz) @Low Gain NF, Gain vs. frequency Band1(1.9GHz) @Low Gain k factor vs. frequency 20 0 12 2 (f=50MHz~20GHz) (f=1.8~2.1GHz) 14 Gain -2 -4 8 -6 6 -8 NF 4 -10 2 -12 k factor 15 10 Gain (dB) Noise Figure (dB) 7 1.92 10 5 (Exclude PCB, Connector Losses) 0 1.80 1.85 1.90 1.95 2.00 frequency (GHz) 2.05 -14 2.10 0 0 5 10 15 20 frequency (GHz) 8／19 Application Note 4 4-5-4 NJG1133MD7 Typical characteristics (1.9GHz Band Low Gain Mode) Condition: Ta=+25oC, VDD=2.85V, VCTL1=0V, VCTL2=0V, VCTL3=0V S11, S22 VSWR S11, S22 (f=50MHz~20GHz) S21, S12 Zin, Zout S21, S12 (f=50MHz~20GHz) 9／19 Application Note 4 Typical characteristics (900MHz Band High Gain Mode) Condition: Ta=+25oC, VDD=2.85V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V Band8(900MHz) @High Gain Pout vs. Pin Band8(900MHz) @High Gain Gain, IDD vs. Pin (f=942.5MHz) (f=942.5MHz) 10 20 8 5 Gain (dB) Pout (dBm) -5 -10 -15 Pout 15 6 10 4 IDD (mA) Gain 0 IDD -20 5 2 -25 P-1dB(IN)=-7.7dBm P-1dB(IN)=-7.7dBm -30 -40 -30 -20 -10 0 0 -40 10 0 -30 -20 -10 0 10 Pin (dBm) Pin (dBm) Band8(900MHz) @High Gain Pout, IM3 vs. Pin Band8(900MHz) @High Gain OIP3, IIP3 vs. frequency (f1=900~1000MHz, f2=f1+100kHz, Pin=-30dBm) (f1=942.5MHz, f2=f1+100kHz) 20 22 12 20 10 Pout -40 -60 16 6 14 4 12 2 IIP3 10 IM3 IIP3 (dBm) OIP3 -20 -80 8 18 OIP3 (dBm) Pout, IM3 (dBm) 0 0 -2 8 IIP3=+0.6dBm -100 -40 -30 -20 -10 0 6 900 10 920 940 960 980 Pin (dBm) frequency (MHz) Band8(900MHz) @High Gain NF, Gain vs. frequency Band8(900MHz) @High Gain k factor vs. frequency -4 1000 (f=50MHz~20GHz) (f=800~1100MHz) 5 18 4 16 20 15 3 14 2 12 NF 1 10 k factor Gain Gain (dB) Noise Figure (dB) 4-5-5 NJG1133MD7 10 5 (Exclude PCB, Connector Losses) 0 800 850 900 950 1000 frequency (GHz) 1050 8 1100 0 0 5 10 15 20 frequency (GHz) 10／19 Application Note 4 NJG1133MD7 4-5-6 Typical characteristics (900MHz Band High Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 S21, S12 (f=50MHz~20GHz) (f=50MHz~20GHz) 11／19 Application Note 4 NJG1133MD7 4-5-7 Typical characteristics (900MHz Band Low Gain Mode) Condition: Ta=+25oC, VDD=2.85V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V Band8(900MHz) @Low Gain Pout vs. Pin Band8(900MHz) @Low Gain Gain, IDD vs. Pin (f=942.5MHz) (f=942.5MHz) 20 0 300 Gain 10 -5 200 -10 100 -10 -20 IDD -15 0 IDD (uA) Gain (dB) Pout (dBm) 0 Pout -30 -20 -100 -40 P-1dB(IN)=+17.7dBm -50 -40 -30 -20 -10 0 P-1dB(IN)=+17.7dBm 10 -25 -40 20 -200 -30 -20 -10 0 10 Pin (dBm) Pin (dBm) Band8(900MHz) @Low Gain Pout, IM3 vs. Pin Band8(900MHz) @Low Gain OIP3, IIP3 vs. frequency 20 (f1=900~1000MHz, f2=f1+100kHz, Pin=-20dBm) (f1=942.5MHz, f2=f1+100kHz) 20 14 22 12 20 OIP3 -20 Pout -40 -60 18 8 16 6 14 4 12 IIP3 2 10 IM3 -80 IIP3 (dBm) 10 OIP3 (dBm) Pout, IM3 (dBm) 0 8 0 IIP3=+12.3dBm -100 -40 -30 -20 -10 0 10 -2 900 20 940 960 980 Pin (dBm) frequency (MHz) Band8(900MHz) @Low Gain NF, Gain vs. frequency Band8(900MHz) @Low Gain k factor vs. frequency 14 -2 12 -3 15 -5 6 -6 NF -7 2 k factor -4 8 4 20 Gain (dB) Gain 10 6 1000 (f=50MHz~20GHz) (f=800~1100MHz) Noise Figure (dB) 920 10 5 -8 (Exclude PCB, Connector Losses) 0 800 850 900 950 1000 frequency (MHz) 1050 -9 1100 0 0 5 10 15 20 frequency (GHz) 12／19 Application Note 4 NJG1133MD7 4-5-8 Typical characteristics (900MHz Band Low Gain Mode) Condition: Ta=+25oC, VDD=2.85V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 S21, S12 (f=50MHz~20GHz) (f=50MHz~20GHz) 13／19 Application Note 4 NJG1133MD7 4-5-9 Typical characteristics (1.8GHz Band High Gain Mode) Condition: Ta=+25oC, VDD=2.85V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V Band3(1.7GHz) @High Gain Pout vs. Pin Band3(1.7GHz) @High Gain Gain, IDD vs. Pin (f=1842.5MHz) (f=1842.5MHz) 10 20 8 5 Gain (dB) Pout (dBm) -5 -10 Pout -15 15 6 10 4 -20 IDD 5 IDD (mA) Gain 0 2 -25 P-1dB(IN)=-7.1dBm -30 -40 -30 -20 P-1dB(IN)=-7.1dBm -10 0 0 -40 10 0 -30 -20 -10 0 10 Pin (dBm) Pin (dBm) Band3(1.7GHz) @High Gain Pout, IM3 vs. Pin Band3(1.7GHz) @High Gain OIP3, IIP3 vs. frequency (f1=1.8~1.9GHz, f2=f1+100kHz, Pin=-30dBm) (f1=1842.5MHz, f2=f1+100kHz) 20 18 6 17 5 -20 -40 -60 IM3 -80 IIP3=+1.4dBm -100 -40 -30 -20 -10 0 3 14 2 13 12 0 11 -1 1.82 1.84 1.86 1.88 frequency (GHz) Band3(1.7GHz) @High Gain NF, Gain vs. frequency Band3(1.7GHz) @High Gain k factor vs. frequency 3.5 18 10 1 8 0.5 k factor 12 1.5 15 16 14 NF 20 Gain (dB) Gain 2.5 -2 1.90 (f=50MHz~20GHz) 20 3 1 IIP3 Pin (dBm) (f=1.7~2.0GHz) Noise Figure (dB) 4 15 10 1.80 10 4 2 OIP3 16 IIP3 (dBm) Pout OIP3 (dBm) Pout, IM3 (dBm) 0 10 5 6 (Exclude PCB, Connector Losses) 0 1.70 1.75 1.80 1.85 1.90 frequency (GHz) 1.95 4 2.00 0 0 5 10 15 20 frequency (GHz) 14／19 Application Note 4 NJG1133MD7 4-5-10 Typical characteristics (1.8GHz Band High Gain Mode) Condition: Ta=+25oC, VDD=2.85V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 S21, S12 (f=50MHz~20GHz) (f=50MHz~20GHz) 15／19 Application Note 4 NJG1133MD7 4-5-11 Typical characteristics (1.8GHz Band Low Gain Mode) Condition: Ta=+25oC, VDD=2.85V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V Band3(1.7GHz) @Low Gain Pout vs. Pin Band3(1.7GHz) @Low Gain Gain, IDD vs. Pin (f=1842.5MHz) (f=1842.5MHz) 20 0 200 Gain 10 -5 160 -10 120 -15 80 -10 -20 Pout -30 IDD -20 IDD (uA) Gain (dB) Pout (dBm) 0 40 -40 P-1dB(IN)=+17.6dBm -50 -40 -30 -20 -10 0 10 P-1dB(IN)=+17.6dBm -25 -40 20 0 -30 -20 -10 0 10 Pin (dBm) Pin (dBm) Band3(1.7GHz) @Low Gain Pout, IM3 vs. Pin Band3(1.7GHz) @Low Gain OIP3, IIP3 vs. frequency 20 (f1=1.8~1.9GHz, f2=f1+100kHz, Pin=-16dBm) (f1=1842.5MHz, f2=f1+100kHz) 20 15 17 14 16 13 15 Pout -40 -60 IIP3 12 14 13 11 OIP3 10 12 9 11 8 10 IIP3 (dBm) -20 OIP3 (dBm) Pout, IM3 (dBm) 0 IM3 -80 IIP3=+13.5dBm -100 -40 -30 -20 -10 0 10 7 1.8 20 1.82 1.84 1.88 Pin (dBm) frequency (GHz) Band3(1.7GHz) @Low Gain NF, Gain vs. frequency Band3(1.7GHz) @Low Gain k factor vs. frequency 9 1.9 (f=50MHz~20GHz) (f=1.7~2.0GHz) 14 20 0 12 -2 Gain -4 8 -6 NF 6 -8 4 -10 2 -12 15 k factor 10 Gain (dB) Noise Figure (dB) 1.86 10 5 (Exclude PCB, Connector Losses) 0 1.70 1.75 1.80 1.85 1.90 frequency (GHz) 1.95 -14 2.00 0 0 5 10 15 20 frequency (GHz) 16／19 Application Note 4 NJG1133MD7 4-5-12 Typical characteristics (1.8GHz Band Low Gain Mode) Condition: Ta=+25oC, VDD=2.85V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 S21, S12 (f=50MHz~20GHz) (f=50MHz~20GHz) 17／19 Application Note 4 NJG1133MD7 4-6 Block diagram, Application circuit RF IN3 (Band 3) (Top View) L8 1.1nH L7 3.3nH GND 11 RFIN3 10 9 GND GND 8 RF OUT3 (Band 3) RF IN2 (Band 1) L5 2.2nH 13 12 7 Band 3 (1.7GHz) L4 2.9nH RF IN1 (Band 8) L2 6.8nH C4 2.0pF L9 3.0nH RFOUT3 RFIN2 C5 0.01uF Bias Circuit C2 2.0pF RFOUT2 RFIN1 13 RF OUT2 (Band 1) 6 Band 1 (1.9GHz) L1 12nH VCTL3 L6 2.9nH Bias Circuit Logic Circuit C3 0.01uF Band 8 (900MHz) 14 C1 1.5pF 5 Bias Circuit VCTL3=0 or 1.8V (RX ATT) RF OUT1 (Band 8) RFOUT1 L3 10nH GND 1 VCTL2 2 VCTL2=0 or 1.8V (Band Sel2) VCTL1 3 GND 4 VDD=2.85V VCTL1=0 or 1.8V (Band Sel1) Parts List Parts ID L1, L2, L4 ~ L9 L3 C1 ~ C5 Comments MURATA (LQP03T Series) TDK (MLK0603 Series) MURATA (GRM03 Series) 18／19 Application Note 4 NJG1133MD7 4-7 Evaluation board (Top View) RF IN3 (1.8GHz Band) L7 L4 C5 C4 L8 RF IN2 (1.9GHzBand) RF OUT3 (1.8GHz Band) L5 L9 VDD L6 L3 L2 C2 C3 C1 VDD L1 VCTL3 RF IN1 (900MHz Band) VCTL2 RF OUT2 (1.9GHz Band) VCTL1 RF OUT1 (900MHz Band) PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH=0.4mm (Z0=50ohm) PCB SIZE=35.4mm x 17.0mm CAUTION In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC. 19／19