Application Note 5 NJG1133MD7 2.1GHz / 800MHz / 1.8GHz Bands Application 5-1 Summary The characterisitics of 2.1GHz/800MHz/1.8GHz bands have evaluated as follows. The evaluation circuit structure and measured data are reviewed. 5-2-1 Measurement data of assembled evaluation board DC Characteristics General conditions : VDD=2.8V, Ta=+25oC Measurement data Units VDD 2.8 V Control Voltage 1 (High) VCTL1(H) 1.8 V Control Voltage 1 (Low) VCTL1(L) 0 V Control Voltage 2 (High) VCTL2(H) 1.8 V Control Voltage 2 (Low) VCTL2(L) 0 V Control Voltage 3 (High) VCTL3(H) 1.8 V Control Voltage 3 (Low) LNA Operating Current 1 (2.1GHz High Gain Mode) LNA Operating Current 2 (800MHz High Gain Mode) LNA Operating Current 3 (1.9GHz High Gain Mode) 1.8 LNA Operating Current 4 (Low Gain Mode) Control Current 1 VCTL3(L) 0 V Parameter LNA Supply Voltage Symbol Condition IDD1 VCTL1=0V, VCTL2=0V, VCTL3=1.8V 2.51 mA IDD2 VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V 2.54 mA IDD3 VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V 2.43 2.51 mA IDD4 VCTL3=0V 32.2 uA ICTL1 VCTL1=1.8V 5.0 uA Control Current 2 ICTL2 VCTL2=1.8V 4.9 uA Control Current 3 ICTL3 VCTL3=1.8V 5.0 uA 1/19 5-2-2 Measurement data of assembled evaluation board RF Characteristics 1 (2.1GHz Band High Gain Mode) General condition : VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V, fRF=2110~2170MHz, Ta=+25oC, Zs=Zl=50ohm, with application circuit Parameter Small Signal Gain 1 Isolation 1 Noise Figure 1 Symbol Measurement Data Units Gain 1 15.7~16.0 dB ISO 1 -29.9~-29.3 dB NF 1 1.29~1.30 dB P-1dB(IN)_1 -9.6~-9.2 dBm IIP3H1_1 -0.3~-0.1 dBm VSWRi_1 1.38~1.63 - VSWRo_1 1.86~1.92 - Symbol Measurement Data Units Gain 2 -3.6~-3.5 dB ISO 2 -3.6~-3.5 dB NF 2 3.4~4.1 dB P-1dB(IN)_2 +14.0~+14.3 dBm IIP3_2 +10.8~+11.8 dBm VSWRi_2 1.21~1.43 - VSWRo_2 1.62~1.76 - Condition Exclude Input&Output PCB, Connector Losses (0.45dB) Exclude Input&Output PCB, Connector Losses (0.45dB) Exclude PCB, Connector Losses (0.09dB) Input Power 1dB Compression 1 Input 3rd Order f1=fRF, f2=fRF+100kHz, Intercept Point 1 Pin=-30dBm RF IN VSWR 1 RF OUT VSWR 1 RF Characteristics 2 (2.1GHz Band Low Gain Mode) General condition : VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V, fRF=2110~2170MHz, Ta=+25oC, Zs=Zl=50ohm, with application circuit Parameter Small Signal Gain 2 Isolation 2 Noise Figure 2 Condition Exclude Input&Output PCB, Connector Losses (0.45dB) Exclude Input&Output PCB, Connector Losses (0.45dB) Exclude PCB, Connector Losses (0.09dB) Input Power 1dB Compression 2 Input 3rd Order f1=fRF, f2=fRF+100kHz, Intercept Point 2 Pin=-16dBm RF IN VSWR 2 RF OUT VSWR 2 2 Application Note 5 NJG1133MD7 5-2-3 Measurement data of assembled evaluation board RF Characteristics 3 (800MHz Band High Gain Mode) General condition : VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V, fRF=869~900MHz, Ta=+25oC, Zs=Zl=50ohm, with application circuit Parameter Small Signal Gain 3 Isolation 3 Noise Figure 3 Symbol Measurement Data Units Gain 3 15.9~16.0 dB ISO 3 -34.7~-34.4 dB NF 3 1.31~1.44 dB P-1dB(IN)_3 -9.4~-9.3 dBm IIP3H1_3 -2.8~-2.1 dBm VSWRi_3 1.62~1.73 - VSWRo_3 2.21~2.34 - Symbol Measurement Data Units Gain 4 -3.1~-3.0 dB ISO 4 -3.1~-3.0 dB NF 4 3.0~3.9 dB P-1dB(IN)_4 +17.1~+17.7 dBm IIP3_4 +13.8~+14.5 dBm VSWRi_4 1.26~1.38 - VSWRo_4 1.66~1.75 - Condition Exclude Input&Output PCB, Connector Losses (0.22dB) Exclude Input&Output PCB, Connector Losses (0.22dB) Exclude PCB, Connector Losses (0.06dB) Input Power 1dB Compression 3 Input 3rd Order f1=fRF, f2=fRF+100kHz, Intercept Point 3 Pin=-30dBm RF IN VSWR 3 RF OUT VSWR 3 RF Characteristics 4 (800MHz Band Low Gain Mode) General condition : VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V, fRF=869~900MHz, Ta=+25oC, Zs=Zl=50ohm, with application circuit Parameter Small Signal Gain 4 Isolation 4 Noise Figure 4 Condition Exclude Input&Output PCB, Connector Losses (0.22dB) Exclude Input&Output PCB, Connector Losses (0.22dB) Exclude PCB, Connector Losses (0.06dB) Input Power 1dB Compression 4 Input 3rd Order f1=fRF, f2=fRF+100kHz, Intercept Point 4 Pin=-20dBm RF IN VSWR 4 RF OUT VSWR 4 3/19 5-2-4 Measurement data of assembled evaluation board RF Characteristics 5 (1.8GHz Band High Gain Mode) General condition : VDD=2.85V, 2.7 VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V, fRF=1805~1880MHz, Ta=+25oC, Zs=Zl=50ohm, with application circuit Parameter Small Signal Gain 5 Noise Figure 5 Input Power 1dB Compression 5 Input 3rd Order Intercept Point 5 RF IN VSWR 5 Condition Exclude Input&Output PCB, Connector Losses (0.41dB) Exclude PCB, Connector Losses (0.10dB) f1=fRF, f2=fRF+100kHz, Pin=-30dBm RF OUT VSWR 5 Symbol Measurement Data Units Gain 5 15.7 ~ 15.9 dB NF 5 1.35 ~ 1.41 dB P-1dB(IN)_5 -7.8 ~ -7.1 dBm IIP3_5 +1.0 ~ +1.8 dBm VSWRi_5 1.76 ~ 1.93 - VSWRo_5 1.78 ~ 1.79 - Symbol Measurement Data Units Gain 6 -4.0 ~ -3.9 dB NF 6 3.9 ~ 4.7 dB P-1dB(IN)_6 +17.4 ~ +17.7 dBm IIP3_6 +13.3 ~ +14.1 dBm VSWRi_6 1.67 ~ 1.72 - VSWRo_6 2.14 ~ 2.24 - RF Characteristics 6 (1.8GHz Band Low Gain Mode) 2.7 VCTL1=0V, VCTL2=1.8V, VCTL3=0V, fRF=1805~1880MHz, General condition : VDD=2.85V, Ta=+25oC, Zs=Zl=50ohm, with application circuit Parameter Small Signal Gain 6 Noise Figure 6 Input Power 1dB Compression 6 Input 3rd Order Intercept Point 6 RF IN VSWR 6 RF OUT VSWR 6 Condition Exclude Input&Output PCB, Connector Losses (0.41dB) Exclude PCB, Connector Losses (0.10dB) f1=fRF, f2=fRF+100kHz, Pin=-16dBm 4 Application Note 5 NJG1133MD7 5-3 Pin configuration GND 11 RFIN3 10 9 GND GND 8 RFOUT3 RFIN2 13 12 7 1.8GHz Band Bias Circuit RFOUT2 RFIN1 13 6 2.1GHz Band Bias Circuit Logic Circuit VCTL3 800MHz Band 14 5 Bias Circuit GND 1 VCTL2 2 RFOUT1 VCTL1 3 GND 4 VCTL terminal function VCTL1, VCTL2：Band Select (2.1GHz or 800MHz or 1.8GHz) VCTL3：RX ATT Select (High Gain mode or Low Gain mode) 5-4 Truth table VCTL1 Control Voltage VCTL2 VCTL3 2.1GHz Band State 800MHz Band 1.8 1.9GHz Band (Band Sel1) (Band Sel2) (RX ATT) LNA IDD Bypass LNA IDD Bypass LNA IDD Bypass L L H H L L H H L L L L H H H H L H L H L H L H OFF ON OFF OFF OFF OFF OFF OFF ON OFF ON OFF ON OFF ON OFF OFF OFF OFF ON OFF OFF OFF OFF ON OFF ON OFF ON OFF ON OFF OFF OFF OFF OFF OFF ON OFF ON ON OFF ON OFF ON OFF ON OFF 5/19 5-5-1 Typical characteristics (2.1GHz Band High Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V 2.1GHz @High Gain Gain, IDD vs. Pin 2.1GHz @High Gain Pout vs. Pin (f=2140MHz) 10 (f=2140MHz) 20 5 Gain (dB) -5 Pout -10 -15 15 6 10 4 5 -20 2 IDD -25 P-1dB(IN)=-9.3dBm P-1dB(IN)=-9.3dBm -30 -20 -10 0 0 -40 10 -30 -20 0 10 0 Pin (dBm) Pin (dBm) 2.1GHz @High Gain OIP3, IIP3 vs. frequency 2.1GHz @High Gain Pout, IM3 vs. Pin (f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-30dBm) (f1=2140MHz, f2=f1+100kHz) 20 -10 0 Pout, IM3 (dBm) Pout OIP3 (dBm) -20 -40 -60 IM3 -80 20 6 19 5 18 4 3 17 OIP3 16 2 15 1 14 0 IIP3 13 IIP3 (dBm) -30 -40 IDD (mA) Gain 0 Pout (dBm) 8 -1 IIP3=-0.1dBm -100 -40 -30 -20 -10 0 2.12 2.14 2.16 2.18 Pin (dBm) frequency (GHz) 2.1GHz @High Gain NF, Gain vs. frequency 2.1GHz @High Gain k factor vs. frequency (f=2.0~2.3GHz) 4 -2 2.2 (f=50MHz~20GHz) 20 20 18 Gain 2.5 14 2 12 1.5 10 NF 1 15 16 8 k factor 3 Gain (dB) 3.5 NF (dB) 12 2.1 10 10 5 6 0.5 (Exclude PCB, Connector Losses) 0 2 2.05 2.1 2.15 2.2 frequency (GHz) 2.25 4 2.3 0 0 5 10 15 20 frequency (GHz) 6 Application Note 5 NJG1133MD7 5-5-2 Typical characteristics (2.1GHz Band High Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 S21, S12 (f=50MHz~20GHz) (f=50MHz~20GHz) 7/19 5-5-3 Typical characteristics (2.1GHz Band Low Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V 2.1GHz @Low Gain Pout vs. Pin 2.1GHz @Low Gain Gain, IDD vs. Pin (f=2140MHz) 0 10 55 -2 0 50 Gain Gain (dB) -10 -20 Pout 45 -6 40 -8 35 -30 -10 -40 30 IDD P-1dB(IN)=+14.1dBm P-1dB(IN)=+14.1dBm -50 -40 -30 -20 -10 0 10 -12 -40 20 -30 -20 Pin (dBm) 0 10 25 2.1GHz @Low Gain OIP3, IIP3 vs. frequency (f1=2140MHz, f2=f1+100kHz) 14 (f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-16dBm) 12 12 IIP3 OIP3 (dBm) -20 Pout -40 -60 IM3 11 11 10 10 9 9 OIP3 8 -80 14 13 13 0 Pout, IM3 (dBm) 20 Pin (dBm) 2.1GHz @Low Gain Pout, IM3 vs. Pin 20 -10 IIP3 (dBm) Pout (dBm) -4 IDD (uA) (f=2140MHz) 20 8 7 7 IIP3=+11.2dBm -100 -40 -30 -20 -10 0 10 2.12 2.14 2.16 2.18 Pin (dBm) frequency (GHz) 2.1GHz @Low Gain NF, Gain vs. frequency 2.1GHz @Low Gain k factor vs. frequency (f=2.0~2.3GHz) 14 0 6 2.2 (f=50MHz~20GHz) 20 -2 10 8 -6 6 -8 NF -10 4 15 -4 k factor Gain Gain (dB) 12 NF (dB) 6 2.1 20 10 5 -12 2 (Exclude PCB, Connector Losses) 0 2 2.05 2.1 2.15 2.2 frequency (GHz) 2.25 -14 2.3 0 0 5 10 15 20 frequency (GHz) 8 Application Note 5 NJG1133MD7 5-5-4 Typical characteristics (2.1GHz Band Low Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 S21, S12 (f=50MHz~20GHz) (f=50MHz~20GHz) 9/19 5-5-5 Typical characteristics (800MHz Band High Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V 800MHz @High Gain Pout vs. Pin 800MHz @High Gain Gain, IDD vs. Pin (f=885MHz) 10 (f=885MHz) 20 5 Gain (dB) -5 Pout -10 -15 15 6 10 4 5 -20 IDD (mA) Gain 0 Pout (dBm) 8 2 IDD -25 P-1dB(IN)=-9.3dBm -30 -20 P-1dB(IN)=-9.3dBm -10 0 0 -40 10 -30 -20 Pin (dBm) 0 10 0 Pin (dBm) 800MHz @High Gain Pout, IM3 vs. Pin 800MHz @High Gain OIP3, IIP3 vs. frequency (f1=885MHz, f2=f1+100kHz) 20 -10 17 0 Pout, IM3 (dBm) Pout OIP3 (dBm) -20 -40 -60 (f1=860~910MHz, f2=f1+100kHz, Pin=-30dBm) 16 3 15 2 1 14 OIP3 13 0 12 -1 -2 11 IM3 4 IIP3 (dBm) -30 -40 IIP3 -80 -3 10 IIP3=-2.1dBm -100 -40 -30 -20 -10 0 9 860 10 870 880 Pin (dBm) (f=750~1000MHz) (f=50MHz~20GHz) 20 18 16 2.5 14 2 12 1.5 10 8 NF 15 k factor Gain Gain (dB) 3 NF (dB) -4 910 800MHz @High Gain k factor vs. frequency 20 3.5 1 900 frequency (MHz) 800MHz @High Gain NF, Gain vs. frequency 4 890 10 5 6 0.5 (Exclude PCB, Connector Losses) 0 750 800 850 900 frequency (MHz) 950 4 1000 0 0 5 10 15 20 frequency (GHz) 10 Application Note 5 NJG1133MD7 5-5-6 Typical characteristics (800MHz Band High Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 S21, S12 (f=50MHz~20GHz) (f=50MHz~20GHz) 11/19 5-5-7 Typical characteristics (800MHz Band Low Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V 800MHz @Low Gain Pout vs. Pin 800MHz @Low Gain Gain, IDD vs. Pin (f=885MHz) 20 10 50 -10 Pout -4 45 -6 40 -8 35 IDD (uA) Gain Gain (dB) Pout (dBm) 55 -2 0 -20 (f=885MHz) 0 -30 -10 -40 30 IDD P-1dB(IN)=+17.7dBm -30 -20 -10 0 10 -12 -40 20 -10 0 800MHz @Low Gain Pout, IM3 vs. Pin 800MHz @Low Gain OIP3, IIP3 vs. frequency 17 25 20 10 Pin (dBm) (f1=860~910MHz, f2=f1+100kHz, Pin=-20dBm) 15 15 OIP3 (dBm) -20 Pout -40 -60 IIP3 14 14 13 13 12 12 11 IM3 -80 17 16 16 0 Pout, IM3 (dBm) -20 Pin (dBm) (f1=885MHz, f2=f1+100kHz) 20 -30 IIP3 (dBm) -50 -40 P-1dB(IN)=+17.7dBm 11 OIP3 10 10 IIP3=+14.5dBm -100 -40 -30 -20 -10 0 10 9 860 20 870 880 890 900 Pin (dBm) frequency (MHz) 800MHz @Low Gain NF, Gain vs. frequency 800MHz @Low Gain k factor vs. frequency (f=750~1000MHz) 14 0 12 -2 10 -4 9 910 (f=50MHz~20GHz) 20 15 6 -8 4 -10 2 NF k factor -6 Gain (dB) NF (dB) Gain 8 10 5 -12 (Exclude PCB, Connector Losses) 0 750 800 850 900 frequency (MHz) 950 -14 1000 0 0 5 10 15 20 frequency (GHz) 12 Application Note 5 NJG1133MD7 5-5-8 Typical characteristics (800MHz Band Low Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 S21, S12 (f=50MHz~20GHz) (f=50MHz~20GHz) 13/19 5-5-9 Typical characteristics (1.8GHz Band High Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V Band3(1.7GHz) @High Gain Pout vs. Pin Band3(1.7GHz) @High Gain Gain, IDD vs. Pin (f=1842.5MHz) (f=1842.5MHz) 10 20 8 5 Gain (dB) Pout (dBm) -5 -10 Pout -15 15 6 10 4 -20 IDD 5 IDD (mA) Gain 0 2 -25 P-1dB(IN)=-7.1dBm -30 -40 -30 -20 P-1dB(IN)=-7.1dBm -10 0 0 -40 10 0 -30 -20 -10 0 10 Pin (dBm) Pin (dBm) Band3(1.7GHz) @High Gain Pout, IM3 vs. Pin Band3(1.7GHz) @High Gain OIP3, IIP3 vs. frequency (f1=1.8~1.9GHz, f2=f1+100kHz, Pin=-30dBm) (f1=1842.5MHz, f2=f1+100kHz) 20 18 6 17 5 -20 -40 -60 IM3 -80 IIP3=+1.4dBm -100 -40 -30 -20 -10 0 3 14 2 13 12 0 11 -1 1.82 1.84 1.86 1.88 frequency (GHz) Band3(1.7GHz) @High Gain NF, Gain vs. frequency Band3(1.7GHz) @High Gain k factor vs. frequency 3.5 18 10 1 8 0.5 k factor 12 1.5 15 16 14 NF 20 Gain (dB) Gain 2.5 -2 1.90 (f=50MHz~20GHz) 20 3 1 IIP3 Pin (dBm) (f=1.7~2.0GHz) Noise Figure (dB) 4 15 10 1.80 10 4 2 OIP3 16 IIP3 (dBm) Pout OIP3 (dBm) Pout, IM3 (dBm) 0 10 5 6 (Exclude PCB, Connector Losses) 0 1.70 1.75 1.80 1.85 1.90 frequency (GHz) 1.95 4 2.00 0 0 5 10 15 20 frequency (GHz) 14 Application Note 5 NJG1133MD7 5-5-10 Typical characteristics (1.8GHz Band High Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (f=50MHz~20GHz) S21, S12 (f=50MHz~20GHz) 15/19 5-5-11 Typical characteristics (1.8GHz Band Low Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V Band3(1.7GHz) @Low Gain Pout vs. Pin Band3(1.7GHz) @Low Gain Gain, IDD vs. Pin (f=1842.5MHz) (f=1842.5MHz) 20 0 200 Gain 10 -5 160 -10 120 -15 80 -10 -20 Pout -30 IDD -20 IDD (uA) Gain (dB) Pout (dBm) 0 40 -40 P-1dB(IN)=+17.6dBm -50 -40 -30 -20 -10 0 10 P-1dB(IN)=+17.6dBm -25 -40 20 0 -30 -20 -10 0 10 Pin (dBm) Pin (dBm) Band3(1.7GHz) @Low Gain Pout, IM3 vs. Pin Band3(1.7GHz) @Low Gain OIP3, IIP3 vs. frequency 20 (f1=1.8~1.9GHz, f2=f1+100kHz, Pin=-16dBm) (f1=1842.5MHz, f2=f1+100kHz) 20 15 17 14 16 13 15 Pout -40 -60 IIP3 12 14 13 11 OIP3 10 12 9 11 8 10 IIP3 (dBm) -20 OIP3 (dBm) Pout, IM3 (dBm) 0 IM3 -80 IIP3=+13.5dBm -100 -40 -30 -20 -10 0 10 7 1.8 20 1.82 1.84 1.88 Pin (dBm) frequency (GHz) Band3(1.7GHz) @Low Gain NF, Gain vs. frequency Band3(1.7GHz) @Low Gain k factor vs. frequency 9 1.9 (f=50MHz~20GHz) (f=1.7~2.0GHz) 14 20 0 12 -2 Gain -4 8 -6 NF 6 -8 4 -10 2 -12 15 k factor 10 Gain (dB) Noise Figure (dB) 1.86 10 5 (Exclude PCB, Connector Losses) 0 1.70 1.75 1.80 1.85 1.90 frequency (GHz) 1.95 -14 2.00 0 0 5 10 15 20 frequency (GHz) 16 Application Note 5 NJG1133MD7 5-5-12 Typical characteristics (1.8GHz Band Low Gain Mode) Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (f=50MHz~20GHz) S21, S12 (f=50MHz~20GHz) 17/19 5-6 Application circuit RF IN3 (1.8GHz) (Top View) L8 1.1nH L7 3.3nH GND 11 RFIN3 10 9 GND GND 8 RF OUT3 (1.8GHz ) RF IN2 (2.1GHz ) L5 1.6nH 13 12 7 1.8GHz Band L4 2.4nH RF IN1 (800MHz) L2 8.2nH C4 2.0pF L9 3.0nH RFOUT3 RFIN2 C5 0.01uF Bias Circuit C2 2.0pF RFOUT2 RFIN1 13 RF OUT2 (2.1GHz) 6 2.1GHz Band L1 12nH Logic Circuit VCTL3 L6 2.4nH Bias Circuit C3 0.01uF 800MHz Band 14 C1 2.0pF 5 Bias Circuit VCTL3=0 or 1.8V (RX ATT) RF OUT1 (800MHz) RFOUT1 L3 10nH GND 1 VCTL2 2 VCTL1 3 VCTL2=0 or 1.8V (Band Sel2) GND 4 VDD=2.7V VCTL1=0 or 1.8V (Band Sel1) Parts List Parts ID Comments L1, L2, L4 ~L9 MURATA (LQP03T Series) L3 TDK (MLK0603 Series) C1~C5 MURATA (GRM03 Series) 18 Application Note 5 NJG1133MD7 5-7 Evaluation board (Top View) RF IN3 RF OUT3 (1.8GHz) (1.8GHz) L7 C4 L8 RF IN2 (2.1GHz) L4 L5 L9 C5 VDD L6 C2 L3 C3 L2 VDD C1 RF OUT2 (2.1GHz) L1 VCTL3 VCTL2 VCTL1 RF IN1 RF OUT1 (800MHz) (800MHz) PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH=0.4mm (Z0=50ohm) PCB SIZE=35.4mm x 17.0mm CAUTION In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC. 19/19