NTE2954 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package Features: D Low Gate Charge: 147nC Typ D Low Reverse Transfer Capacitance: 300pF Typ D Fast Switching D 100% Avalanche Tested D Improved dv/dt Capability D G S Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Drain Current (Note 1), ID Continuous TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68A Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360A Drain−Source Diode Forward Current, IS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360A Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2430mJ Avalanche Current (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90A Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mJ Peak Diode Recovery (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.55W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Note Note Note Note 1. 2. 3. 4. Drain current limited by maximum junction temperature. Repetitive Rating: Pulse width limited by maximum junction temperature. L = 0.3mH, IAS = 90A, VDD = 50V, RG = 25, Starting TJ = +25C. ISD 90A, di/dt 200A/s, VDD BVDSS, Starting TJ = +25C. Rev. 9−14 Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 100 − − V − 0.1 − V/C VDS = 100V, VGS = 0 − − 1 A VDS = 80V, TC = +150C − − 10 A IGSS VGS = 20V, VDS = 0V − − 100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 − 4.0 V Static Drain−Source ON Resistance RDS(on) VGS = 10V, ID = 45A − 8.5 10.0 m gFS VDS = 40V, ID = 45A, Note 5 − 72 − S Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz − 4730 6150 pF Output Capacitance Coss − 1180 1530 pF Reverse Transfer Capacitance Crss − 300 390 pF − 52 114 ns − 492 944 ns td(off) − 304 618 ns tf − 355 720 ns − 147 191 nC − 28 − nC − 60 − nC VGS = 0V, IS = 90A − − 1.4 V VGS = 0V, IS = 90A, dIF/dt = 100A/s, Note 5 − 114 − ns − 0.54 − C OFF Characteristics Drain−Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A Breakdown Voltage Temperature Coefficient BVDSS/ ID = 250A, Referenced to +25C TJ Zero Gate Voltage Drain Current Gate−Body Leakage Current IDSS ON Characteristics Forward Transconductance Dynamic Characteristics Switching Characteristics Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr Total Gate Charge Qg Gate−Source Charge Qgs Gate−Drain Charge Qgd VDD = 50V, ID = 90A, RG = 25, Note5, Note 6 VDS = 80V, ID = 90A, VGS = 10V, Note5, Note 6 Drain−Source Diode Characteristics and Maximum Ratings Drain−Source Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Note 5. Pulse Test: Pulse width 300s, Duty cycle 2%. Note 6. Essentially independent of operating temperature. .114 (2.9) .181 (4.6) Max .126 (3.2) Dia Max .405 (10.3) Max Isol .252 (6.4) .622 (15.0) Max G D S .118 (3.0) Max .531 (13.5) Min .098 (2.5) .100 (2.54)