2954

NTE2954
MOSFET
N−Channel, Enhancement Mode
High Speed Switch
TO−220 Full Pack Type Package
Features:
D Low Gate Charge: 147nC Typ
D Low Reverse Transfer Capacitance: 300pF Typ
D Fast Switching
D 100% Avalanche Tested
D Improved dv/dt Capability
D
G
S
Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Drain Current (Note 1), ID
Continuous
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90A
TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68A
Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360A
Drain−Source Diode Forward Current, IS
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360A
Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2430mJ
Avalanche Current (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90A
Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mJ
Peak Diode Recovery (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns
Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83W
Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.55W/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
Note
Note
Note
Note
1.
2.
3.
4.
Drain current limited by maximum junction temperature.
Repetitive Rating: Pulse width limited by maximum junction temperature.
L = 0.3mH, IAS = 90A, VDD = 50V, RG = 25, Starting TJ = +25C.
ISD  90A, di/dt  200A/s, VDD  BVDSS, Starting TJ = +25C.
Rev. 9−14
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
100
−
−
V
−
0.1
−
V/C
VDS = 100V, VGS = 0
−
−
1
A
VDS = 80V, TC = +150C
−
−
10
A
IGSS
VGS = 20V, VDS = 0V
−
−
100
nA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250A
2.0
−
4.0
V
Static Drain−Source ON Resistance
RDS(on)
VGS = 10V, ID = 45A
−
8.5
10.0
m
gFS
VDS = 40V, ID = 45A, Note 5
−
72
−
S
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
−
4730
6150
pF
Output Capacitance
Coss
−
1180
1530
pF
Reverse Transfer Capacitance
Crss
−
300
390
pF
−
52
114
ns
−
492
944
ns
td(off)
−
304
618
ns
tf
−
355
720
ns
−
147
191
nC
−
28
−
nC
−
60
−
nC
VGS = 0V, IS = 90A
−
−
1.4
V
VGS = 0V, IS = 90A, dIF/dt = 100A/s,
Note 5
−
114
−
ns
−
0.54
−
C
OFF Characteristics
Drain−Source Breakdown Voltage
V(BR)DSS VGS = 0V, ID = 250A
Breakdown Voltage Temperature
Coefficient
BVDSS/ ID = 250A, Referenced to +25C
TJ
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
IDSS
ON Characteristics
Forward Transconductance
Dynamic Characteristics
Switching Characteristics
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
Total Gate Charge
Qg
Gate−Source Charge
Qgs
Gate−Drain Charge
Qgd
VDD = 50V, ID = 90A, RG = 25, Note5,
Note 6
VDS = 80V, ID = 90A, VGS = 10V, Note5,
Note 6
Drain−Source Diode Characteristics and Maximum Ratings
Drain−Source Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Note 5. Pulse Test: Pulse width  300s, Duty cycle  2%.
Note 6. Essentially independent of operating temperature.
.114 (2.9)
.181 (4.6)
Max
.126 (3.2) Dia Max
.405 (10.3)
Max
Isol
.252
(6.4)
.622
(15.0)
Max
G
D
S
.118
(3.0)
Max
.531
(13.5)
Min
.098 (2.5)
.100 (2.54)