NTE2980 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO251 Type Package Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS(on) Specified at VGS = 4V & 5V D Fast Switching D TO251 Type Package D G S Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 5V) TC = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.7A TC = +1005C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.9A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31A Total Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.20W/5C Total Power Dissipation (PC Board Mount, TC = +255C, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . 2.5W Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.02W/5C Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +10V Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47mJ Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +2605C Maximum Thermal Resistance: Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.05C/W Junction−to−Ambient (PCB Mount, Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 505C/W Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1105C/W Note Note Note Note 1. 2. 3. 4. Repetitive Rating: Pulse width limited by maximum junction temperature. When mounted on a 1” square PCB (FR−4 or G−10 material). L = 9245 H, VDD = 25V, RG = 253 , Starting TJ = +255C, IAS = 7.7A. ISD 3 10A, di/dt 3 90A/5 s, VDD 3 V(BR)DSS, TJ 3 +1505C. Rev. 10−13 Electrical Characteristics: (TJ = +255C unless otherwise specified) Parameter Drain−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain−Source ON Resistance Gate Threshold Voltage Forward Transconductance Drain−to−Source Leakage Current Symbol BVDSS Test Conditions Min Typ Max Unit 60 − − V − 0.073 − V/5C VGS = 5V, ID = 4.6A, Note 5 − − 0.20 3 VGS = 4V, ID = 3.9A, Note 4 − − 0.28 3 VDS = VGS, ID = 2505 A 1.0 − 2.0 V VDS = 25V, ID = 4.6A, Note 5 3.4 − − mhos VDS = 60V, VGS = 0 − − 25 5A VDS = 48V, VGS = 0V, TC = +1255C − − 250 5A VGS = 0V, ID = 2505 A +V(BR)DSS/ Reference to +255C, ID = 1mA +TJ RDS(on) VGS(th) gfs IDSS Gate−Source Leakage Forward IGSS VGS = 10V − − 100 nA Gate−Source Leakage Reverse IGSS VGS = −10V − − −100 nA VGS = 5V, ID = 10A, VDS = 48V, Note 5 − − 8.4 nC Total Gate Charge Qg Gate−Source Charge Qgs − − 3.5 nC Gate−Drain (“Miller”) Charge Qgd − − 6.0 nC Turn−On Delay Time td(on) − 9.3 − ns − 110 − ns td(off) − 17 − ns tf − 26 − ns Between lead, 6mm (0.25”) from package and center of die contact − 4.5 − nH − 7.5 − nH VGS = 0V, VDS = 25V, f = 1MHz − 400 − pF Rise Time Turn−Off Delay Time Fall Time tr Internal Drain Inductance LD Internal Source Inductance LS VDD = 30V, ID = 10A, RG = 123 , RD = 2.83 , Note 5 Input Capacitance Ciss Output Capacitance Coss − 170 − pF Reverse Transfer Capacitance Crss − 42 − pF (Body Diode) − − 7.7 A Source−Drain Diode Ratings and Characteristics Continuous Source Current IS Pulse Source Current ISM (Body Diode) Note 1 − − 31 A Diode Forward Voltage VSD TJ = +255C, IS = 7.7A, VGS = 0V, Note 5 − − 1.6 V Reverse Recovery Time trr − 65 130 ns Reverse Recovery Charge Qrr TJ = +255C, IF = 10A, di/dt = 100A/5 s, Note 5 − 0.33 0.65 5C Forward Turn−On Time ton Intrinsic turn−on time is neglegible (turn−on is dominated by LS + LD) Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 5. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%. .256 (6.5) .090 (2.3) .035 (0.9) .197 (5.0) .059 (1.5) D .275 (7.0) G D S .295 (7.5) 0.02 (0.5) .090 (2.3)