2981

NTE2981
Logic Level MOSFET
N−Channel, Enhancement Mode
High Speed Switch
TO251 Type Package
Features:
D Dynamic dv/dt Rating
D Repetitive Avalanche rated
D Logic Level Gate Drive
D RDS(on) Specified at VGS = 4V & 5V
D TO251 Type Package
D
G
S
Absolute Maximum Ratings:
Drain Current, ID
Continuous (VGS = 5V)
TC = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.7A
TC = +1005C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.9A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31A
Total Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42W
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.33W/5C
Total Power Dissipation (PC Board Mount, TC = +255C, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . 2.5W
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.02W/5C
Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +10V
Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.7A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2mJ
Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +2605C
Maximum Thermal Resistance:
Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.05C/W
Junction−to−Ambient (PCB Mount, Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 505C/W
Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1105C/W
Note
Note
Note
Note
1.
2.
3.
4.
Repetitive Rating: Pulse width limited by maximum junction temperature.
When mounted on a 1” square PCB (FR−4 or G−10 material).
L = 5.3mH, VDD = 25V, RG = 253 , Starting TJ = +255C, IAS = 7.7A.
ISD 3 9.2A, di/dt 3 110A/5 s, VDD 3 V(BR)DSS, TJ 3 +1505C.
Rev. 10−13
Electrical Characteristics: (TJ = +255C unless otherwise specified)
Parameter
Drain−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain−Source ON Resistance
Gate Threshold Voltage
Forward Transconductance
Drain−to−Source Leakage Current
Symbol
BVDSS
Test Conditions
Min
Typ
Max
Unit
100
−
−
V
−
0.13
−
V/5C
VGS = 5V, ID = 4.6A, Note 5
−
−
0.27
3
VGS = 4V, ID = 3.9A, Note 4
−
−
0.38
3
VDS = VGS, ID = 2505 A
1.0
−
2.0
V
VDS = 50V, ID = 4.6A, Note 5
4.4
−
−
mhos
VDS = 100V, VGS = 0
−
−
25
5A
VDS = 80V, VGS = 0V, TC = +1255C
−
−
250
5A
VGS = 0V, ID = 2505 A
+V(BR)DSS/ Reference to +255C, ID = 1mA
+TJ
RDS(on)
VGS(th)
gfs
IDSS
Gate−Source Leakage Forward
IGSS
VGS = 10V
−
−
100
nA
Gate−Source Leakage Reverse
IGSS
VGS = −10V
−
−
−100
nA
VGS = 5V, ID = 9.2A, VDS = 80V, Note 5
−
−
12
nC
Total Gate Charge
Qg
Gate−Source Charge
Qgs
−
−
3.0
nC
Gate−Drain (“Miller”) Charge
Qgd
−
−
7.1
nC
Turn−On Delay Time
td(on)
−
9.8
−
ns
−
64
−
ns
td(off)
−
21
−
ns
tf
−
27
−
ns
Between lead, 6mm (0.25”) from
package and center of die contact
−
4.5
−
nH
−
7.5
−
nH
VGS = 0V, VDS = 25V, f = 1MHz
−
490
−
pF
Rise Time
Turn−Off Delay Time
Fall Time
tr
Internal Drain Inductance
LD
Internal Source Inductance
LS
VDD = 50V, ID = 9.2A, RG = 9.03 ,
RD = 5.23 , Note 5
Input Capacitance
Ciss
Output Capacitance
Coss
−
150
−
pF
Reverse Transfer Capacitance
Crss
−
30
−
pF
(Body Diode)
−
−
7.7
A
Source−Drain Diode Ratings and Characteristics
Continuous Source Current
IS
Pulse Source Current
ISM
(Body Diode) Note 1
−
−
31
A
Diode Forward Voltage
VSD
TJ = +255C, IS = 7.7A, VGS = 0V, Note 5
−
−
2.5
V
Reverse Recovery Time
trr
−
110
140
ns
Reverse Recovery Charge
Qrr
TJ = +255C, IF = 9.2A, di/dt = 100A/5 s,
Note 5
−
0.8
1.0
5C
Forward Turn−On Time
ton
Intrinsic turn−on time is neglegible
(turn−on is dominated by LS + LD)
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 5. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%.
.256 (6.5)
.090 (2.3)
.035 (0.9)
.197 (5.0)
.059
(1.5)
.275
(7.0)
G
D
S
.295
(7.5)
0.02 (0.5)
.090 (2.3)