CPV364M4KPbF Datasheet

CPV364M4KPbF
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Vishay Semiconductors
IGBT SIP Module
(Short Circuit Rated Ultrafast IGBT)
FEATURES
• Short circuit rated ultrafast: optimized for high
speed, and short circuit rated to 10 μs at 125 °C,
VGE = 15 V
• Fully isolated printed circuit board mount
package
• Switching-loss rating includes all “tail” losses
IMS-2
• HEXFRED® soft ultrafast diodes
• UL approved file E78996
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
VCES
600 V
IRMS per phase (3.1 kW total)
with TC = 90 °C
11 ARMS
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TJ
125 °C
DESCRIPTION
Supply voltage
360 VDC
Power factor
0.8
Modulation depth (see fig. 1)
115 %
VCE(on) (typical)
at IC = 13 A, 25 °C
1.8 V
Speed
8 kHz to 30 kHz
The IGBT technology is the key to Vishay’s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules. These modules are more efficient than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.
Package
SIP
Circuit
Three phase inverter
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
TEST CONDITIONS
MAX.
UNITS
600
V
TC = 25 °C
24
TC = 100 °C
13
A
Pulsed collector current
ICM
(1)
48
Clamped inductive load current
ILM (2)
48
Short circuit withstand time
Gate to emitter voltage
Isolation voltage
Maximum power dissipation, each IGBT
Operating junction and storage temperature range
tSC
TC = 100 °C
VGE
VISOL
PD
t = 1 min, any terminal to case
9.3
± 20
V
2500
VRMS
TC = 25 °C
63
TC = 100 °C
25
TJ, TStg
μs
W
-55 to +150
°C
Soldering temperature
For 10 s, (0.063" (1.6 mm) from case)
Mounting torque
6-32 or M3 screw
300
5 to 7
(0.55 to 0.8)
lbf  in
(N m)
Notes
(1) Repetitive rating; V
GE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)
(2) V
CC = 80 % (VCES), VGE = 20 V, L = 10 μH, RG = 10  (see fig. 19)
Revision: 10-Jun-15
Document Number: 94488
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, each IGBT, one IGBT in conduction
Junction to case, each DIODE, one DIODE in conduction
Case to sink, flat, greased surface
SYMBOL
TYP.
MAX.
UNITS
RthJC (IGBT)
-
2.2
RthJC (DIODE)
-
3.7
RthCS (MODULE)
0.10
-
20
-
g
0.7
-
oz.
°C/W
Weight of module
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Temperature coeff. of breakdown
voltage
SYMBOL
V(BR)CES
(1)
V(BR)CESTJ
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
VGE = 0 V, IC = 250 μA
600
-
-
V
VGE = 0 V, IC = 1.0 mA
-
0.63
-
V/°C
-
1.80
2.3
-
1.80
-
-
1.56
1.73
3.0
-
6.0
-
-13
-
mV/°C
VCE = 100 V, IC = 10 A
11
18
-
S
VGE = 0 V, VCE = 600 V
-
-
250
VGE = 0 V, VCE = 600 V, TJ = 150 °C
-
-
3500
IC = 15 A
-
1.3
1.7
IC = 15 A, TJ = 150 °C
-
1.2
1.6
VGE = ± 20 V
-
-
± 100
IC = 13 A
Collector to emitter saturation voltage
VCE(on)
IC = 24 A
VGE = 15 V
See fig. 2, 5
IC = 13 A, TJ = 150 °C
Gate threshold voltage
Temperature coeff. of threshold voltage
VGE(th)
VGE(th)/TJ
(2)
Forward transconductance
gfe
Zero gate voltage collector current
ICES
Diode forward voltage drop
Gate to emitter leakage current
VFM
IGES
VCE = VGE, IC = 250 μA
V
μA
See fig. 13
V
nA
Notes
(1) Pulse width  80 μs, duty factor  0.1 %
(2) Pulse width 5.0 μs; single shot
Revision: 10-Jun-15
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SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IC = 13 A
VCC = 400 V
VGE = 15 V
See fig. 8
MIN.
TYP.
MAX.
-
110
170
-
14
21
-
49
74
Total gate charge (turn-on)
Qg
Gate to emitter charge (turn-on)
Qge
Gate to collector charge (turn-on)
Qgc
Turn-on delay time
td(on)
-
50
-
tr
-
30
-
-
110
170
-
91
140
-
0.56
-
-
0.28
-
-
0.84
1.1
10
-
-
Rise time
Turn-off delay time
Fall time
td(off)
tf
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Ets
Short circuit withstand time
tsc
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
Total switching loss
Ets
Internal emitter inductance
LE
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Diode reverse recovery time
trr
Diode peak reverse recovery charge
Irr
Diode reverse recovery charge
Qrr
Diode peak rate of fall of recovery
during tb
dI(rec)M/dt
TJ = 25 °C
IC = 13 A, VCC = 480 V
VGE = 15 V, RG = 10 
Energy losses include “tail” and diode 
reverse recovery
See fig. 9, 10, 18
VCC = 360 V,TJ = 125 °C
VGE = 15 V, RG = 10 , VCPK < 500 V
UNITS
nC
ns
mJ
μs
-
47
-
-
30
-
-
250
-
-
150
-
-
1.28
-
mJ
Measured 5 mm from package
-
7.5
-
nH
VGE = 0 V
VCC = 30 V
ƒ = 1.0 MHz
See fig. 7
-
1600
-
-
130
-
-
55
-
-
42
60
-
74
120
-
4.0
6.0
-
6.5
10
-
80
180
-
220
600
-
188
-
-
160
-
TJ = 150 °C, see fig. 9, 10, 11, 18
IC = 13 A, VCC = 480 V
VGE = 15 V, RG = 10
Energy losses include “tail” and 
diode reverse recovery
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
See fig. 14
See fig. 15
See fig. 16
See fig. 17
IF = 15 A
VR = 200 V
dI/dt = 200 A/μs
ns
pF
ns
A
nC
A/μs





















Revision: 10-Jun-15
Document Number: 94488
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5.27
18
16
LOAD CURRENT (A)
14
4.68
4.10
12
3.51
10
2.93
8
2.34
6
1.76
4
1.17
2
0.59
0
0.1
0.00
1
10
Total Output Power (kW)
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of Fundamental)
160
Maximum DC Collector Current (A)
I C , Collector-to-Emitter Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
140
120
100
V GE = 15V
20µs PULSE WIDTH
1
1
80
60
20
10
0
VCE , Collector-to-Emitter Voltage(V)
I C , Collector-to-Emitter Current (A)
4.0
TJ = 150 °C
10
TJ = 25 °C
V CC = 50V
5µs PULSE WIDTH
7
8
9
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Output Characteristics
5
10
15
20
25
TC, Case Temperature (°C)
30
Fig. 4 - Maximum Collector Current vs.
Case Temperature
100
6
see note (2)
0
Fig. 2 - Typical Output Characteristics
5
Square wave (D=0.50)
80% rated Vr applied
40
VCE , Collector-to-Emitter Voltage (V)
1
DC
10
VGE = 15V
80 us PULSE WIDTH
3.0
IC = 26A
2.0
IC = 13A
IC = 6.5A
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Revision: 10-Jun-15
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Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
P
DM
0.05
0.1
t
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/t
1
t2
2
2. Peak TJ = P DM x Z thJC + T C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t 1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction to Case
1.5
3000
C, Capacitance (pF)
2500
Total Switching Losses (mJ)
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
2000
Cies
1500
1000
500
1.0
Coes
Cres
0
1
10
0.5
100
0
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
Total Switching Losses (mJ)
VGE , Gate-to-Emitter Voltage (V)
12
8
4
0
0
20
40
60
80
100
120
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
20
30
40
50
Fig. 9 - Typical Switching Losses vs. Gate Resistance
VCC = 400V
I C = 13A
16
10
R G , Gate Resistance (Ω)
10
20
VCC = 480V
VGE = 15V
TJ = 25 ° C
I C = 13A
RG = 10Ω
Ohm
VGE = 15V
VCC = 480V
IC = 26 A
IC = 13 A
1
IC = 6.5 A
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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RG
TJ
VCC
VGE
1000
10Ω
= Ohm
= 150 °C
= 480V
= 15V
IC , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
4.0
Vishay Semiconductors
3.0
2.0
1.0
0.0
VGE = 20V
T J = 125°C
100
SAFE OPERATING AREA
10
1
0
5
10
15
20
25
30
1
I C , Collector-to-emitter Current (A)
10
100
1000
VCE, Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs.
Collector to Emitter Current
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current - I F (A)
100
10
TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
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100
800
VR= 200V
T J = 125°C
T J = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
80
600
Q RR - (nC)
t rr - (ns)
IF = 30A
I F = 30A
60
I F = 15A
400
I F = 15A
IF = 5.0A
40
200
I F = 5.0A
20
100
di f /dt - (A/µs)
0
100
1000
Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt
1000
VR = 200V
TJ = 125°C
TJ = 25°C
di(rec)M/dt - (A/µs)
VR = 200V
TJ = 125°C
TJ = 25°C
I F = 30A
I IRRM - (A)
1000
Fig. 16 - Typical Stored Charge vs. dIF/dt
100
10
di f /dt - (A/µs)
IF = 15A
I F = 5.0A
I F = 15A
I F = 30A
I F = 5.0A
1
100
1000
di f /dt - (A/µs)
Fig. 15 - Typical Recovery Current vs. dIF/dt
100
100
1000
di f /dt - (A/µs)
Fig. 17 - Typical dI(rec)M/dt vs dIF/dt
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GATE VOLTAGE D.U.T.
10% +Vg
+Vg
Same type
device as
D.U.T.
DUT VOLTAGE
AND CURRENT
Vce
80 %
of VCE
430 µF
Vcc
10% Ic
Ipk
90% Ic
Ic
D.U.T.
5% Vce
tr
td(on)
t2
Eon = Vce ie dt
t1
∫
t1
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr,
Irr, td(on), tr, td(off), tf
t2
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
trr
90% Vge
Qrr =
Ic
+Vge
tx
10% Vcc
Vce
∫
trr
id dt
tx
10% Irr
Vcc
Ic
90% Ic
10% Vce
Vpk
Irr
Ic
5% Ic
td(off)
DIODE RECOVERY
WAVEFORMS
tf
Eoff =
∫
t1+5µS
Vce ic dt
t1
DIODE REVERSE
RECOVERY ENERGY
t1
t3
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a,
Defining Eoff, td(off), tf
t4
Erec = Vd id dt
t3
∫
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Vg GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit
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D.U.T.
L
1000 V
RL =
VC
0 - 480 V
6000 µF
100 V
50 V
480 V
4 x IC at 25 °C
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
CIRCUIT CONFIGURATION
1
3
Q1
D1
9
Q3
D3
4
6
Q2
D2
7
12
15
Q5
D5
10
Q4
D4
13
18
16
Q6
D6
19
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95066
Revision: 10-Jun-15
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Outline Dimensions
Vishay Semiconductors
IMS-2 (SIP)
DIMENSIONS in millimeters (inches)
Ø 3.91 (0.154)
2x
62.43 (2.458)
7.87 (0.310)
53.85 (2.120)
5.46 (0.215)
21.97 (0.865)
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
0.38 (0.015)
3.94 (0.155)
1.27 (0.050)
4.06 ± 0.51
(0.160 ± 0.020)
5.08 (0.200)
6x
1.27 (0.050)
13 x
2.54 (0.100)
6x
3.05 ± 0.38
(0.120 ± 0.015)
0.76 (0.030)
13 x
0.51 (0.020)
6.10 (0.240)
IMS-2 Package Outline (13 Pins)
Notes
(1) Tolerance uless otherwise specified ± 0.254 mm (0.010")
(2) Controlling dimension: inch
(3) Terminal numbers are shown for reference only
Document Number: 95066
Revision: 30-Jul-07
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Revision: 02-Oct-12
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