CPV364M4KPbF www.vishay.com Vishay Semiconductors IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) FEATURES • Short circuit rated ultrafast: optimized for high speed, and short circuit rated to 10 μs at 125 °C, VGE = 15 V • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses IMS-2 • HEXFRED® soft ultrafast diodes • UL approved file E78996 PRODUCT SUMMARY OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE VCES 600 V IRMS per phase (3.1 kW total) with TC = 90 °C 11 ARMS • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TJ 125 °C DESCRIPTION Supply voltage 360 VDC Power factor 0.8 Modulation depth (see fig. 1) 115 % VCE(on) (typical) at IC = 13 A, 25 °C 1.8 V Speed 8 kHz to 30 kHz The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. Package SIP Circuit Three phase inverter ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 600 V TC = 25 °C 24 TC = 100 °C 13 A Pulsed collector current ICM (1) 48 Clamped inductive load current ILM (2) 48 Short circuit withstand time Gate to emitter voltage Isolation voltage Maximum power dissipation, each IGBT Operating junction and storage temperature range tSC TC = 100 °C VGE VISOL PD t = 1 min, any terminal to case 9.3 ± 20 V 2500 VRMS TC = 25 °C 63 TC = 100 °C 25 TJ, TStg μs W -55 to +150 °C Soldering temperature For 10 s, (0.063" (1.6 mm) from case) Mounting torque 6-32 or M3 screw 300 5 to 7 (0.55 to 0.8) lbf in (N m) Notes (1) Repetitive rating; V GE = 20 V, pulse width limited by maximum junction temperature (see fig. 20) (2) V CC = 80 % (VCES), VGE = 20 V, L = 10 μH, RG = 10 (see fig. 19) Revision: 10-Jun-15 Document Number: 94488 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV364M4KPbF www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction to case, each IGBT, one IGBT in conduction Junction to case, each DIODE, one DIODE in conduction Case to sink, flat, greased surface SYMBOL TYP. MAX. UNITS RthJC (IGBT) - 2.2 RthJC (DIODE) - 3.7 RthCS (MODULE) 0.10 - 20 - g 0.7 - oz. °C/W Weight of module ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Temperature coeff. of breakdown voltage SYMBOL V(BR)CES (1) V(BR)CESTJ TEST CONDITIONS MIN. TYP. MAX. UNITS VGE = 0 V, IC = 250 μA 600 - - V VGE = 0 V, IC = 1.0 mA - 0.63 - V/°C - 1.80 2.3 - 1.80 - - 1.56 1.73 3.0 - 6.0 - -13 - mV/°C VCE = 100 V, IC = 10 A 11 18 - S VGE = 0 V, VCE = 600 V - - 250 VGE = 0 V, VCE = 600 V, TJ = 150 °C - - 3500 IC = 15 A - 1.3 1.7 IC = 15 A, TJ = 150 °C - 1.2 1.6 VGE = ± 20 V - - ± 100 IC = 13 A Collector to emitter saturation voltage VCE(on) IC = 24 A VGE = 15 V See fig. 2, 5 IC = 13 A, TJ = 150 °C Gate threshold voltage Temperature coeff. of threshold voltage VGE(th) VGE(th)/TJ (2) Forward transconductance gfe Zero gate voltage collector current ICES Diode forward voltage drop Gate to emitter leakage current VFM IGES VCE = VGE, IC = 250 μA V μA See fig. 13 V nA Notes (1) Pulse width 80 μs, duty factor 0.1 % (2) Pulse width 5.0 μs; single shot Revision: 10-Jun-15 Document Number: 94488 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV364M4KPbF www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IC = 13 A VCC = 400 V VGE = 15 V See fig. 8 MIN. TYP. MAX. - 110 170 - 14 21 - 49 74 Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on delay time td(on) - 50 - tr - 30 - - 110 170 - 91 140 - 0.56 - - 0.28 - - 0.84 1.1 10 - - Rise time Turn-off delay time Fall time td(off) tf Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Ets Short circuit withstand time tsc Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf Total switching loss Ets Internal emitter inductance LE Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Diode reverse recovery time trr Diode peak reverse recovery charge Irr Diode reverse recovery charge Qrr Diode peak rate of fall of recovery during tb dI(rec)M/dt TJ = 25 °C IC = 13 A, VCC = 480 V VGE = 15 V, RG = 10 Energy losses include “tail” and diode reverse recovery See fig. 9, 10, 18 VCC = 360 V,TJ = 125 °C VGE = 15 V, RG = 10 , VCPK < 500 V UNITS nC ns mJ μs - 47 - - 30 - - 250 - - 150 - - 1.28 - mJ Measured 5 mm from package - 7.5 - nH VGE = 0 V VCC = 30 V ƒ = 1.0 MHz See fig. 7 - 1600 - - 130 - - 55 - - 42 60 - 74 120 - 4.0 6.0 - 6.5 10 - 80 180 - 220 600 - 188 - - 160 - TJ = 150 °C, see fig. 9, 10, 11, 18 IC = 13 A, VCC = 480 V VGE = 15 V, RG = 10 Energy losses include “tail” and diode reverse recovery TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C See fig. 14 See fig. 15 See fig. 16 See fig. 17 IF = 15 A VR = 200 V dI/dt = 200 A/μs ns pF ns A nC A/μs Revision: 10-Jun-15 Document Number: 94488 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV364M4KPbF www.vishay.com Vishay Semiconductors 5.27 18 16 LOAD CURRENT (A) 14 4.68 4.10 12 3.51 10 2.93 8 2.34 6 1.76 4 1.17 2 0.59 0 0.1 0.00 1 10 Total Output Power (kW) Tc = 90°C Tj = 125°C Power Factor = 0.8 Modulation Depth = 1.15 Vcc = 50% of Rated Voltage 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of Fundamental) 160 Maximum DC Collector Current (A) I C , Collector-to-Emitter Current (A) 100 TJ = 150 °C 10 TJ = 25 °C 140 120 100 V GE = 15V 20µs PULSE WIDTH 1 1 80 60 20 10 0 VCE , Collector-to-Emitter Voltage(V) I C , Collector-to-Emitter Current (A) 4.0 TJ = 150 °C 10 TJ = 25 °C V CC = 50V 5µs PULSE WIDTH 7 8 9 VGE, Gate-to-Emitter Voltage (V) Fig. 3 - Typical Output Characteristics 5 10 15 20 25 TC, Case Temperature (°C) 30 Fig. 4 - Maximum Collector Current vs. Case Temperature 100 6 see note (2) 0 Fig. 2 - Typical Output Characteristics 5 Square wave (D=0.50) 80% rated Vr applied 40 VCE , Collector-to-Emitter Voltage (V) 1 DC 10 VGE = 15V 80 us PULSE WIDTH 3.0 IC = 26A 2.0 IC = 13A IC = 6.5A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig. 5 - Typical Collector to Emitter Voltage vs. Junction Temperature Revision: 10-Jun-15 Document Number: 94488 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV364M4KPbF www.vishay.com Vishay Semiconductors Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 P DM 0.05 0.1 t 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 /t 1 t2 2 2. Peak TJ = P DM x Z thJC + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction to Case 1.5 3000 C, Capacitance (pF) 2500 Total Switching Losses (mJ) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 2000 Cies 1500 1000 500 1.0 Coes Cres 0 1 10 0.5 100 0 VCE , Collector-to-Emitter Voltage (V) Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage Total Switching Losses (mJ) VGE , Gate-to-Emitter Voltage (V) 12 8 4 0 0 20 40 60 80 100 120 QG , Total Gate Charge (nC) Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage 20 30 40 50 Fig. 9 - Typical Switching Losses vs. Gate Resistance VCC = 400V I C = 13A 16 10 R G , Gate Resistance (Ω) 10 20 VCC = 480V VGE = 15V TJ = 25 ° C I C = 13A RG = 10Ω Ohm VGE = 15V VCC = 480V IC = 26 A IC = 13 A 1 IC = 6.5 A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature Revision: 10-Jun-15 Document Number: 94488 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV364M4KPbF www.vishay.com RG TJ VCC VGE 1000 10Ω = Ohm = 150 °C = 480V = 15V IC , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 4.0 Vishay Semiconductors 3.0 2.0 1.0 0.0 VGE = 20V T J = 125°C 100 SAFE OPERATING AREA 10 1 0 5 10 15 20 25 30 1 I C , Collector-to-emitter Current (A) 10 100 1000 VCE, Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector to Emitter Current Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) 100 10 TJ = 150°C TJ = 125°C TJ = 25°C 1 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Revision: 10-Jun-15 Document Number: 94488 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV364M4KPbF www.vishay.com Vishay Semiconductors 100 800 VR= 200V T J = 125°C T J = 25°C VR = 200V TJ = 125°C TJ = 25°C 80 600 Q RR - (nC) t rr - (ns) IF = 30A I F = 30A 60 I F = 15A 400 I F = 15A IF = 5.0A 40 200 I F = 5.0A 20 100 di f /dt - (A/µs) 0 100 1000 Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt 1000 VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/µs) VR = 200V TJ = 125°C TJ = 25°C I F = 30A I IRRM - (A) 1000 Fig. 16 - Typical Stored Charge vs. dIF/dt 100 10 di f /dt - (A/µs) IF = 15A I F = 5.0A I F = 15A I F = 30A I F = 5.0A 1 100 1000 di f /dt - (A/µs) Fig. 15 - Typical Recovery Current vs. dIF/dt 100 100 1000 di f /dt - (A/µs) Fig. 17 - Typical dI(rec)M/dt vs dIF/dt Revision: 10-Jun-15 Document Number: 94488 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV364M4KPbF www.vishay.com Vishay Semiconductors GATE VOLTAGE D.U.T. 10% +Vg +Vg Same type device as D.U.T. DUT VOLTAGE AND CURRENT Vce 80 % of VCE 430 µF Vcc 10% Ic Ipk 90% Ic Ic D.U.T. 5% Vce tr td(on) t2 Eon = Vce ie dt t1 ∫ t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t2 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr trr 90% Vge Qrr = Ic +Vge tx 10% Vcc Vce ∫ trr id dt tx 10% Irr Vcc Ic 90% Ic 10% Vce Vpk Irr Ic 5% Ic td(off) DIODE RECOVERY WAVEFORMS tf Eoff = ∫ t1+5µS Vce ic dt t1 DIODE REVERSE RECOVERY ENERGY t1 t3 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf t4 Erec = Vd id dt t3 ∫ t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit Revision: 10-Jun-15 Document Number: 94488 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV364M4KPbF www.vishay.com Vishay Semiconductors D.U.T. L 1000 V RL = VC 0 - 480 V 6000 µF 100 V 50 V 480 V 4 x IC at 25 °C Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit CIRCUIT CONFIGURATION 1 3 Q1 D1 9 Q3 D3 4 6 Q2 D2 7 12 15 Q5 D5 10 Q4 D4 13 18 16 Q6 D6 19 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95066 Revision: 10-Jun-15 Document Number: 94488 9 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors IMS-2 (SIP) DIMENSIONS in millimeters (inches) Ø 3.91 (0.154) 2x 62.43 (2.458) 7.87 (0.310) 53.85 (2.120) 5.46 (0.215) 21.97 (0.865) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 0.38 (0.015) 3.94 (0.155) 1.27 (0.050) 4.06 ± 0.51 (0.160 ± 0.020) 5.08 (0.200) 6x 1.27 (0.050) 13 x 2.54 (0.100) 6x 3.05 ± 0.38 (0.120 ± 0.015) 0.76 (0.030) 13 x 0.51 (0.020) 6.10 (0.240) IMS-2 Package Outline (13 Pins) Notes (1) Tolerance uless otherwise specified ± 0.254 mm (0.010") (2) Controlling dimension: inch (3) Terminal numbers are shown for reference only Document Number: 95066 Revision: 30-Jul-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000