VS-GT105LA120UX Datasheet

VS-GT105LA120UX
www.vishay.com
Vishay Semiconductors
"Low Side Chopper" IGBT SOT-227
(Trench IGBT), 100 A
FEATURES
• Trench IGBT technology
• Very low VCE(on)
• Square RBSOA
• HEXFRED® clamping diode
• 10 μs short circuit capability
• Fully isolated package
• Speed 4 kHz to 30 kHz
SOT-227
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VCES
1200 V
IC DC
100 A at 71 °C
VCE(on) typical at 100 A, 25 °C
2.45 V
Package
SOT-227
Circuit
Chopper low side switch
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
TEST CONDITIONS
MAX.
UNITS
1200
V
TC = 25 °C
134
TC = 80 °C
92
Pulsed collector current
ICM
270
Clamped inductive load current
ILM
270
Diode continuous forward current
IF
Single pulse forward current
IFSM
Gate to emitter voltage
VGE
Power dissipation, IGBT
PD
Power dissipation, diode
RMS isolation voltage
PD
VISOL
TC = 25 °C
87
TC = 80 °C
59
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
360
± 30
TC = 25 °C
463
TC = 80 °C
260
TC = 25 °C
338
TC = 80 °C
190
Any terminal to case, t = 1 min
2500
A
V
W
V
Revision: 31-May-16
Document Number: 95805
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown
voltage
SYMBOL
VBR(CES)
Collector to emitter voltage
VCE(on)
Gate threshold voltage
VGE(th)
TEST CONDITIONS
MIN.
TYP.
MAX.
1200
-
-
VGE = 15 V, IC = 50 A
-
1.73
2.33
VGE = 15 V, IC = 100 A
-
2.26
-
VGE = 15 V, IC = 50 A, TJ = 125 °C
-
2.02
-
VGE = 0 V, IC = 250 μA
VGE = 15 V, IC = 100 A, TJ = 125 °C
Temperature coefficient of
threshold voltage
VGE(th)/TJ
Collector to emitter leakage current
ICES
Diode reverse breakdown voltage
VBR
VFM
Diode reverse leakage current
IRM
Gate to emitter leakage current
IGES
V
-
2.77
-
4.6
5.8
8.0
VCE = VGE, IC = 3.5 mA (25 °C to 125 °C)
-
-14.5
-
mV/°C
VGE = 0 V, VCE = 1200 V
-
0.5
75
μA
VCE = VGE, IC = 3.5 mA
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
IR = 1 mA
IF = 50 A, VGE = 0 V
Diode forward voltage drop
UNITS
-
0.12
-
mA
1200
-
-
V
-
2.65
3.55
IF = 100 A, VGE = 0 V
-
3.5
-
IF = 50 A, VGE = 0 V, TJ = 125 °C
-
2.82
-
V
IF = 100 A, VGE = 0 V, TJ = 125 °C
-
3.9
-
VR = 1200 V
-
4
50
μA
TJ = 125 °C, VR = 1200 V
-
0.8
-
mA
VGE = ± 30 V
-
-
± 600
nA
MIN.
TYP.
MAX.
UNITS
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Total gate charge (turn-on)
Qg
Gate to emitter charge (turn-on)
Qge
Gate to collector charge (turn-on)
Qgc
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
tr
TEST CONDITIONS
IC = 100 A, VCC = 600 V, VGE = 15 V
IC = 100 A, VCC = 600 V,
VGE = 15 V, Rg = 2.2 
L = 500 μH, TJ = 25 °C
IC = 100 A, VCC = 600 V,
VGE = 15 V, Rg = 2.2  
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode recovery
td(off)
tf
Reverse bias safe operating area
RBSOA
TJ = 150 °C, IC = 270 A, Rg = 22 
VGE = 15 V to 0 V, VCC = 900 V,
VP = 1200 V
Short circuit safe operating area
SCSOA
TJ = 150 °C, Rg = 22 
VGE = 15 V to 0 V, VCC = 900 V,
VP = 1200 V
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
-
400
-
-
120
-
-
170
-
-
4.76
-
-
3.64
-
-
8.4
-
-
6.88
-
-
5.66
-
-
12.54
-
-
150
-
-
55
-
-
164
-
-
167
-
IF = 50 A, dIF/dt = 200 A/μs, 
VR = 200 V, TJ = 125 °C
mJ
ns
Fullsquare
10
-
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
nC
129
μs
-
ns
-
11
-
A
-
710
-
nC
-
208
-
ns
-
17
-
A
-
1768
-
nC
Revision: 31-May-16
Document Number: 95805
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction and storage temperature range
SYMBOL
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-40
-
+150
°C
-
-
0.27
-
-
0.37
-
0.05
-
-
30
-
g
Nm (lbf.in)
IGBT
Junction to case
RthJC
Diode
Case to heatsink
RthCS
Flat, greased surface
Weight
Mounting torque
Torque to terminal
-
-
1.1 (9.7)
Torque to heatsink
-
-
1.3 (11.5) Nm (lbf.in)
Case style
SOT-227
200
Allowable Case Temperature (°C)
160
175
150
IC (A)
TJ = 150 °C
TJ = 25 °C
125
100
TJ = 125 °C
75
50
25
0
0
1.0
2.0
3.0
4.0
140
120
100
DC
80
60
40
20
0
5.0
0
20
40
60
80
100
120
140
160
VCE (V)
IC - Continuous Collector Current (A)
Fig. 1 - Typical IGBT Output Characteristics, VGE = 15 V
Fig. 3 - Maximum IGBT Continuous Collector Current vs.
Case Temperature
200
3.5
VGE = 12 V
VGE = 15 V
VGE = 18 V
175
150
3.0
100 A
2.5
VCE (V)
125
IC (A)
°C/W
100
75
VGE = 9 V
50 A
2.0
20 A
1.5
50
1.0
25
0
0.5
0
1.0
2.0
3.0
4.0
5.0
20
40
60
80
100
120
140
160
VCE (V)
TJ (°C)
Fig. 2 - Typical IGBT Output Characteristics, TJ = 125 °C
Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature
Revision: 31-May-16
Document Number: 95805
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1
100
VCE = 20 V
90
TJ = 150 °C
80
0.1
ICES (mA)
70
IC (A)
60
TJ = 125 °C
50
40
TJ = 125 °C
0.01
TJ = 25 °C
30
0.001
20
TJ = 25 °C
10
0.0001
0
4
5
6
7
8
9
100
10
300
500
900
1100
1300
VCES (V)
VGE (V)
Fig. 5 - Typical IGBT Transfer Characteristics
Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current
7.0
200
6.5
175
6.0
TJ = 150 °C
TJ = 25 °C
150
5.5
TJ = 25 °C
125
5.0
IF (A)
VGEth (V)
700
4.5
TJ = 125 °C
TJ = 125 °C
100
75
4.0
50
3.5
25
3.0
0
2.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
1.0
2.0
3.0
4.0
5.0
6.0
IC (mA)
VFM (V)
Fig. 6 - Typical IGBT Gate Threshold Voltage
Fig. 9 - Typical Diode Forward Characteristics
160
Allowable Case Temperature (°C)
1000
IC (A)
100
10
1
10
100
1000
10 000
140
120
100
DC
80
60
40
20
0
0
20
40
60
80
100
VCE (V)
IF - Continuous Forward Current (A)
Fig. 7 - IGBT Reverse BIAS SOA TJ = 150 °C, VGE = 15 V
Fig. 10 - Maximum Diode Continuous Forward Current vs.
Case Temperature
Revision: 31-May-16
Document Number: 95805
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8
1000
td(on)
7
td(off)
Switching Time (ns)
Energy (mJ)
6
5
4
Eoff
3
Eon
2
100
tf
tr
1
0
10
10
20
30
40
50
60
70
80
90
100
0
5
10
15
20
IC (A)
25
30
35
40
45
50
Rg (Ω)
Fig. 14 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, VCC = 600 V, IC = 100 A, VGE = 15 V, L = 500 μH
Fig. 11 - Typical IGBT Energy Loss vs. IC
TJ = 125 °C, VCC = 600 V, Rg = 2.2 , VGE = 15 V, L = 500 μH
270
1000
250
tf
210
td(off)
190
trr (ns)
Switching Time (ns)
230
td(on)
100
TJ = 125 °C
170
150
130
tr
TJ = 25 °C
110
90
10
70
20
30
40
50
60
70
80
90
100
100
1000
IC (A)
dIF/dt (A/μs)
Fig. 12 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, VCC = 600 V, Rg = 2.2 , VGE = 15 V, L = 500 μH
Fig. 15 - Typical Diode Reverse Recovery Time vs. dIF/dt
Vrr = 200 V, IF = 50 A
40
35
33
31
29
27
25
23
21
19
17
15
13
11
9
7
5
3
Eon
35
30
TJ = 125 °C
25
Irr (A)
Energy (mJ)
10
20
15
TJ = 25 °C
10
Eoff
5
0
0
5
10
15
20
25
30
35
40
45
50
100
1000
Rg (Ω)
dIF/dt (A/μs)
Fig. 13 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, VCC = 600 V, IC = 100 A, VGE = 15 V, L = 500 μH
Fig. 16 - Typical Diode Reverse Recovery Current vs. dIF/dt
Vrr = 200 V, IF = 50 A
Revision: 31-May-16
Document Number: 95805
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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2650
2400
2150
TJ = 125 °C
Qrr (nC)
1900
1650
1400
1150
900
TJ = 25 °C
650
400
100
1000
dIF/dt (A/μs)
Fig. 17 - Typical Diode Reverse Recovery Charge vs. dIF/dt
Vrr = 200 V, IF = 50 A
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics - (IGBT)
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics - (Diode)
Revision: 31-May-16
Document Number: 95805
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ORDERING INFORMATION TABLE
Device code
VS-
G
T
105
L
A
120
U
X
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
Insulated Gate Bipolar Transistor (IGBT)
3
-
T = trench IGBT
4
-
Current rating (105 = 100 A)
5
-
Circuit configuration (L = low side chopper)
6
-
Package indicator (A = SOT-227)
7
-
Voltage rating (120 = 1200 V)
8
-
Speed/type (U = ultrafast IGBT)
9
-
Diode (X = HEXFRED® diode)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
Lead Assignment
4
Low side chopper IGBT
4
3
1
2
3
L
2
1
Revision: 31-May-16
Document Number: 95805
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
25.70 (1.012)
24.70 (0.972)
-B-
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
R full 2.10 (0.083)
2.20 (0.087)
30.50 (1.200)
29.80 (1.173)
31.50 (1.240)
32.10 (1.264)
4x
2.20 (0.087)
1.90 (0.075)
8.30 (0.327)
7.70 (0.303)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
12.30 (0.484)
11.70 (0.460)
-C0.13 (0.005)
25.00 (0.984)
25.50 (1.004)
Note
• Controlling dimension: millimeter
PACKAGING INFORMATION SOT-227 GENERATION II
Revision: 31-May-16
Document Number: 95805
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Revision: 02-Oct-12
1
Document Number: 91000