VS-GT105LA120UX www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED® clamping diode • 10 μs short circuit capability • Fully isolated package • Speed 4 kHz to 30 kHz SOT-227 • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VCES 1200 V IC DC 100 A at 71 °C VCE(on) typical at 100 A, 25 °C 2.45 V Package SOT-227 Circuit Chopper low side switch BENEFITS • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Easy to assemble and parallel • Direct mounting on heatsink • Plug-in compatible with other SOT-227 packages • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 1200 V TC = 25 °C 134 TC = 80 °C 92 Pulsed collector current ICM 270 Clamped inductive load current ILM 270 Diode continuous forward current IF Single pulse forward current IFSM Gate to emitter voltage VGE Power dissipation, IGBT PD Power dissipation, diode RMS isolation voltage PD VISOL TC = 25 °C 87 TC = 80 °C 59 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 360 ± 30 TC = 25 °C 463 TC = 80 °C 260 TC = 25 °C 338 TC = 80 °C 190 Any terminal to case, t = 1 min 2500 A V W V Revision: 31-May-16 Document Number: 95805 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT105LA120UX www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage SYMBOL VBR(CES) Collector to emitter voltage VCE(on) Gate threshold voltage VGE(th) TEST CONDITIONS MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 50 A - 1.73 2.33 VGE = 15 V, IC = 100 A - 2.26 - VGE = 15 V, IC = 50 A, TJ = 125 °C - 2.02 - VGE = 0 V, IC = 250 μA VGE = 15 V, IC = 100 A, TJ = 125 °C Temperature coefficient of threshold voltage VGE(th)/TJ Collector to emitter leakage current ICES Diode reverse breakdown voltage VBR VFM Diode reverse leakage current IRM Gate to emitter leakage current IGES V - 2.77 - 4.6 5.8 8.0 VCE = VGE, IC = 3.5 mA (25 °C to 125 °C) - -14.5 - mV/°C VGE = 0 V, VCE = 1200 V - 0.5 75 μA VCE = VGE, IC = 3.5 mA VGE = 0 V, VCE = 1200 V, TJ = 125 °C IR = 1 mA IF = 50 A, VGE = 0 V Diode forward voltage drop UNITS - 0.12 - mA 1200 - - V - 2.65 3.55 IF = 100 A, VGE = 0 V - 3.5 - IF = 50 A, VGE = 0 V, TJ = 125 °C - 2.82 - V IF = 100 A, VGE = 0 V, TJ = 125 °C - 3.9 - VR = 1200 V - 4 50 μA TJ = 125 °C, VR = 1200 V - 0.8 - mA VGE = ± 30 V - - ± 600 nA MIN. TYP. MAX. UNITS SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr TEST CONDITIONS IC = 100 A, VCC = 600 V, VGE = 15 V IC = 100 A, VCC = 600 V, VGE = 15 V, Rg = 2.2 L = 500 μH, TJ = 25 °C IC = 100 A, VCC = 600 V, VGE = 15 V, Rg = 2.2 L = 500 μH, TJ = 125 °C Energy losses include tail and diode recovery td(off) tf Reverse bias safe operating area RBSOA TJ = 150 °C, IC = 270 A, Rg = 22 VGE = 15 V to 0 V, VCC = 900 V, VP = 1200 V Short circuit safe operating area SCSOA TJ = 150 °C, Rg = 22 VGE = 15 V to 0 V, VCC = 900 V, VP = 1200 V Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr - 400 - - 120 - - 170 - - 4.76 - - 3.64 - - 8.4 - - 6.88 - - 5.66 - - 12.54 - - 150 - - 55 - - 164 - - 167 - IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V, TJ = 125 °C mJ ns Fullsquare 10 - IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V nC 129 μs - ns - 11 - A - 710 - nC - 208 - ns - 17 - A - 1768 - nC Revision: 31-May-16 Document Number: 95805 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT105LA120UX www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction and storage temperature range SYMBOL MIN. TYP. MAX. UNITS TJ, TStg -40 - +150 °C - - 0.27 - - 0.37 - 0.05 - - 30 - g Nm (lbf.in) IGBT Junction to case RthJC Diode Case to heatsink RthCS Flat, greased surface Weight Mounting torque Torque to terminal - - 1.1 (9.7) Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) Case style SOT-227 200 Allowable Case Temperature (°C) 160 175 150 IC (A) TJ = 150 °C TJ = 25 °C 125 100 TJ = 125 °C 75 50 25 0 0 1.0 2.0 3.0 4.0 140 120 100 DC 80 60 40 20 0 5.0 0 20 40 60 80 100 120 140 160 VCE (V) IC - Continuous Collector Current (A) Fig. 1 - Typical IGBT Output Characteristics, VGE = 15 V Fig. 3 - Maximum IGBT Continuous Collector Current vs. Case Temperature 200 3.5 VGE = 12 V VGE = 15 V VGE = 18 V 175 150 3.0 100 A 2.5 VCE (V) 125 IC (A) °C/W 100 75 VGE = 9 V 50 A 2.0 20 A 1.5 50 1.0 25 0 0.5 0 1.0 2.0 3.0 4.0 5.0 20 40 60 80 100 120 140 160 VCE (V) TJ (°C) Fig. 2 - Typical IGBT Output Characteristics, TJ = 125 °C Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature Revision: 31-May-16 Document Number: 95805 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT105LA120UX www.vishay.com Vishay Semiconductors 1 100 VCE = 20 V 90 TJ = 150 °C 80 0.1 ICES (mA) 70 IC (A) 60 TJ = 125 °C 50 40 TJ = 125 °C 0.01 TJ = 25 °C 30 0.001 20 TJ = 25 °C 10 0.0001 0 4 5 6 7 8 9 100 10 300 500 900 1100 1300 VCES (V) VGE (V) Fig. 5 - Typical IGBT Transfer Characteristics Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current 7.0 200 6.5 175 6.0 TJ = 150 °C TJ = 25 °C 150 5.5 TJ = 25 °C 125 5.0 IF (A) VGEth (V) 700 4.5 TJ = 125 °C TJ = 125 °C 100 75 4.0 50 3.5 25 3.0 0 2.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 1.0 2.0 3.0 4.0 5.0 6.0 IC (mA) VFM (V) Fig. 6 - Typical IGBT Gate Threshold Voltage Fig. 9 - Typical Diode Forward Characteristics 160 Allowable Case Temperature (°C) 1000 IC (A) 100 10 1 10 100 1000 10 000 140 120 100 DC 80 60 40 20 0 0 20 40 60 80 100 VCE (V) IF - Continuous Forward Current (A) Fig. 7 - IGBT Reverse BIAS SOA TJ = 150 °C, VGE = 15 V Fig. 10 - Maximum Diode Continuous Forward Current vs. Case Temperature Revision: 31-May-16 Document Number: 95805 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT105LA120UX www.vishay.com Vishay Semiconductors 8 1000 td(on) 7 td(off) Switching Time (ns) Energy (mJ) 6 5 4 Eoff 3 Eon 2 100 tf tr 1 0 10 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 IC (A) 25 30 35 40 45 50 Rg (Ω) Fig. 14 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, VCC = 600 V, IC = 100 A, VGE = 15 V, L = 500 μH Fig. 11 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, VCC = 600 V, Rg = 2.2 , VGE = 15 V, L = 500 μH 270 1000 250 tf 210 td(off) 190 trr (ns) Switching Time (ns) 230 td(on) 100 TJ = 125 °C 170 150 130 tr TJ = 25 °C 110 90 10 70 20 30 40 50 60 70 80 90 100 100 1000 IC (A) dIF/dt (A/μs) Fig. 12 - Typical IGBT Switching Time vs. IC TJ = 125 °C, VCC = 600 V, Rg = 2.2 , VGE = 15 V, L = 500 μH Fig. 15 - Typical Diode Reverse Recovery Time vs. dIF/dt Vrr = 200 V, IF = 50 A 40 35 33 31 29 27 25 23 21 19 17 15 13 11 9 7 5 3 Eon 35 30 TJ = 125 °C 25 Irr (A) Energy (mJ) 10 20 15 TJ = 25 °C 10 Eoff 5 0 0 5 10 15 20 25 30 35 40 45 50 100 1000 Rg (Ω) dIF/dt (A/μs) Fig. 13 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, VCC = 600 V, IC = 100 A, VGE = 15 V, L = 500 μH Fig. 16 - Typical Diode Reverse Recovery Current vs. dIF/dt Vrr = 200 V, IF = 50 A Revision: 31-May-16 Document Number: 95805 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT105LA120UX www.vishay.com Vishay Semiconductors 2650 2400 2150 TJ = 125 °C Qrr (nC) 1900 1650 1400 1150 900 TJ = 25 °C 650 400 100 1000 dIF/dt (A/μs) Fig. 17 - Typical Diode Reverse Recovery Charge vs. dIF/dt Vrr = 200 V, IF = 50 A ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics - (IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics - (Diode) Revision: 31-May-16 Document Number: 95805 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT105LA120UX www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G T 105 L A 120 U X 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor (IGBT) 3 - T = trench IGBT 4 - Current rating (105 = 100 A) 5 - Circuit configuration (L = low side chopper) 6 - Package indicator (A = SOT-227) 7 - Voltage rating (120 = 1200 V) 8 - Speed/type (U = ultrafast IGBT) 9 - Diode (X = HEXFRED® diode) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment 4 Low side chopper IGBT 4 3 1 2 3 L 2 1 Revision: 31-May-16 Document Number: 95805 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT105LA120UX www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 12.30 (0.484) 11.70 (0.460) -C0.13 (0.005) 25.00 (0.984) 25.50 (1.004) Note • Controlling dimension: millimeter PACKAGING INFORMATION SOT-227 GENERATION II Revision: 31-May-16 Document Number: 95805 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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