VS-GT120DA65U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 650 V, 120 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • FRED Pt® antiparallel diodes with ultrasoft reverse recovery • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL pending SOT-227 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY BENEFITS VCES 650 V IC DC 120 A at 90 °C VCE(on) typical at 100 A, 25 °C 1.71 V IF DC 76 A at 90 °C Speed 8 kHz to 30 kHz Package SOT-227 Circuit Single switch diode • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Easy to assemble and parallel • Direct mounting to heatsink • Plug-in compatible with other SOT-227 packages • Lower conduction losses and switching losses • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 650 V TC = 25 °C 167 TC = 90 °C 120 Pulsed collector current ICM 220 Clamped inductive load current ILM 220 Diode continuous forward current IF Single pulse forward current IFSM Gate-to-emitter voltage VGE Power dissipation, IGBT PD Power dissipation, diode Isolation voltage PD VISOL A TC = 25 °C 110 TC = 90 °C 76 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 550 A ± 20 V TC = 25 °C 577 TC = 90 °C 327 TC = 25 °C 238 TC = 90 °C 135 Any terminal to case, t = 1 min 2500 W V Revision: 31-May-16 Document Number: 95737 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT120DA65U www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage Collector to emitter leakage current Forward voltage drop, diode Gate to emitter leakage current SYMBOL VBR(CES) VCE(on) VGE(th) VGE(th)/TJ ICES VFM IGES MIN. TYP. MAX. VGE = 0 V, IC = 100 μA TEST CONDITIONS 650 - - VGE = 15 V, IC = 100 A - 1.71 2.00 VGE = 15 V, IC = 100 A, TJ = 125 °C - 2.00 - VGE = 15 V, IC = 100 A, TJ = 175 °C - 2.17 - 5.1 6.1 8.3 VCE = VGE, IC = 1 mA (25 °C to 125 °C) - -20 - VGE = 0 V, VCE = 650 V - 1.2 50 VGE = 0 V, VCE = 650 V, TJ = 125 °C - 80 - VCE = VGE, IC = 3.3 mA VGE = 0 V, VCE = 650 V, TJ = 175 °C - 2.0 - IC = 100 A, VGE = 0 V - 2.00 2.53 UNITS V mV/°C μA mA IC = 100 A, VGE = 0 V, TJ = 125 °C - 1.69 - IC = 100 A, VGE = 0 V, TJ = 175 °C - 1.55 - V VGE = ± 20 V - - ± 660 nA MIN. TYP. MAX. UNITS - 6600 - - 340 - - 180 - - 190 - - 65 - SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss TEST CONDITIONS VGE = 0 V, VCE = 30 V, f = 1.0 MHz Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc - 80 Turn-on switching loss Eon - 0.32 - Turn-off switching loss Eoff - 1.5 - Total switching loss Etot - 1.82 - Turn-on delay time td(on) - 114 - - 73 - - 107 - - 68 - - 0.52 - - 1.85 - - 2.37 - - 115 - - 74 - - 114 - - 89 - Rise time Turn-off delay time Fall time tr Eon Eoff Total switching loss Etot Turn-on delay time td(on) Fall time Energy losses include tail and diode recovery. tf Turn-on switching loss Turn-off delay time IC = 100 A, VCC = 325 V, VGE = 15 V, Rg = 4.7 L = 500 μH td(off) Turn-off switching loss Rise time IC = 100 A, VCC = 400 V, VGE = 15 V tr IC = 100 A, VCC = 325 V, VGE = 15 V, Rg = 4.7 L = 500 μH, TJ = 125 °C td(off) tf Reverse bias safe operating area RBSOA TJ = 175 °C, IC = 220 A, Rg = 10 VGE = 15 V to 0 V, VCC = 325 V, VP = 650 V, L = 500 μH Short circuit safe operating area SCSOA VGE = 15 V, VCC = 400 V, Rg = 4.7 VP 650 V, TJ = 150 °C Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V, TJ = 125 °C pF nC mJ ns mJ ns Fullsquare - - 5.5 μs - 72 - ns - 5.3 - A - 192 - nC - 149 - ns - 13 - A - 974 - nC Revision: 31-May-16 Document Number: 95737 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT120DA65U www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MAX. UNITS - 175 °C - 0.26 - - 0.63 - 0.1 - - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) TJ, TStg Junction and storage temperature range IGBT Junction to case TEST CONDITIONS MIN. TYP. -40 - RthJC Diode Case to heatsink RthCS Flat, greased surface Weight Mounting torque Case style SOT-227 180 Allowable Case Temperature (°C) 240 220 200 180 IC (A) 160 TJ = 175 °C 140 TJ = 25 °C 120 100 TJ = 125 °C 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 160 140 120 100 DC 80 60 40 20 0 0 4.0 20 40 60 80 100 120 140 160 180 200 VCE (V) IC - Continuous Collector Current (A) Fig. 1 - Typical IGBT Output Characteristics, VGE = 15 V Fig. 3 - Maximum IGBT Continuous Collector Current vs. Case Temperature 2.4 240 220 2.2 200 100 A 2.0 180 160 1.8 VGE = 12 V VGE = 15 V VGE = 18 V 140 120 VCE (V) IC (A) °C/W 100 80 1.6 50 A 1.4 1.2 60 20 A 1.0 40 VGE = 9 V 20 0.8 0 0.6 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 20 40 60 80 100 120 140 160 180 VCE (V) TJ (°C) Fig. 2 - Typical IGBT Output Characteristics, TJ = 125 °C Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature Revision: 31-May-16 Document Number: 95737 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT120DA65U www.vishay.com Vishay Semiconductors 100 10 VCE = 20 V 90 TJ = 175 °C 1 80 70 IC (A) ICES (mA) TJ = 125 °C 60 50 TJ = 25 °C 40 TJ = 125 °C 0.1 0.01 30 0.001 20 TJ = 25 °C 10 0.0001 0 5 6 7 8 9 10 11 12 0 100 200 300 400 500 600 700 VCES (V) VGE (V) Fig. 5 - Typical IGBT Transfer Characteristics Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current 7.0 240 TJ = 175 °C 220 6.5 200 6.0 180 TJ = 25 °C 160 5.0 IF (A) VGEth (V) 5.5 4.5 TJ = 125 °C 140 TJ = 25 °C 120 100 80 4.0 TJ = 125 °C 3.5 60 40 3.0 20 0 2.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0.5 1.0 1.5 2.0 2.5 3.0 IC (mA) VFM (V) Fig. 6 - Typical IGBT Gate Threshold Voltage Fig. 9 - Typical Diode Forward Characteristics 180 Allowable Case Temperature (°C) 1000 IC (A) 100 10 1 10 100 1000 VCE (V) Fig. 7 - IGBT Reverse BIAS SOA TJ = 175 °C, VGE = 15 V 160 140 120 DC 100 80 60 40 20 0 0 20 40 60 80 100 120 140 IF - Continuous Forward Current (A) Fig. 10 - Maximum Diode Continuous Forward Current vs. Case Temperature Revision: 31-May-16 Document Number: 95737 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT120DA65U www.vishay.com Vishay Semiconductors 3 1000 td(on) 2.5 Switching Time (ns) td(off) Energy (mJ) 2 1.5 Eoff 1 Eon 0.5 0 tr 100 tf 10 0 20 40 60 80 100 120 140 0 5 10 15 IC (A) 25 30 35 40 45 50 Rg (Ω) Fig. 14 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, VCC = 600 V, IC = 100 A, VGE = 15 V, L = 500 μH Fig. 11 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, VCC = 325 V, Rg = 4.7 , VGE = 15 V, L = 500 μH 180 1000 160 TJ = 125 °C 140 100 120 tf t d(off) trr (ns) Switching Time (ns) 20 t d(on) 100 80 60 tr TJ = 25 °C 40 20 10 0 0 20 40 60 80 100 120 100 140 300 400 dIF/dt (A/μs) Fig. 12 - Typical IGBT Switching Time vs. IC TJ = 125 °C, VCC = 325 V, Rg = 4.7 , VGE = 15 V, L = 500 μH Fig. 15 - Typical trr Diode vs. dIF/dt Vrr = 200 V, IF = 50 A 7 500 24 22 Eon 6 20 18 5 TJ = 125 °C 16 4 Irr (A) Energy (mJ) 200 IC (A) 3 Eoff 14 12 10 8 2 6 TJ = 25 °C 4 1 2 0 0 0 5 10 15 20 25 30 35 40 45 50 100 200 300 400 Rg (Ω) dIF/dt (A/μs) Fig. 13 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, VCC = 325 V, IC = 100 A, VGE = 15 V, L = 500 μH Fig. 16 - Typical Irr Diode vs. dIF/dt Vrr = 200 V, IF = 50 A 500 Revision: 31-May-16 Document Number: 95737 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT120DA65U www.vishay.com Vishay Semiconductors 1600 1400 TJ = 125 °C 1200 Qrr (nC) 1000 800 600 400 TJ = 25 °C 200 0 100 200 300 400 500 dIF/dt (A/μs) Fig. 17 - Typical Diode Reverse Recovery Charge vs. dIF/dt Vrr = 200 V, IF = 50 A ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 1 10 t1 - Rectangular Pulse Duration (s) Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics, IGBT ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t1 - Rectangular Pulse Duration (s) Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics, Diode Revision: 31-May-16 Document Number: 95737 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT120DA65U www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G T 120 D A 65 U 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor (IGBT) 3 - T = Trench IGBT 4 - Current rating (120 = 120 A) 5 - Circuit configuration (D = single switch with antiparallel diode) 6 - Package indicator (A = SOT-227) 7 - Voltage rating (65 = 650 V) 8 - Speed/type (U = ultrafast IGBT) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 3 (C) Single switch diode Lead Assignment 4 3 1 2 D 2 (G) 1, 4 (E) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 31-May-16 Document Number: 95737 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 12.30 (0.484) 11.70 (0.460) -C0.13 (0.005) 25.00 (0.984) 25.50 (1.004) Note • Controlling dimension: millimeter Revision: 02-Aug-12 Document Number: 95423 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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