VS-GT120DA65U Datasheet

VS-GT120DA65U
www.vishay.com
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 650 V, 120 A
FEATURES
• Trench IGBT technology
temperature coefficient
with
positive
• Square RBSOA
• FRED Pt® antiparallel diodes with ultrasoft
reverse recovery
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL pending
SOT-227
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
BENEFITS
VCES
650 V
IC DC
120 A at 90 °C
VCE(on) typical at 100 A, 25 °C
1.71 V
IF DC
76 A at 90 °C
Speed
8 kHz to 30 kHz
Package
SOT-227
Circuit
Single switch diode
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
TEST CONDITIONS
MAX.
UNITS
650
V
TC = 25 °C
167
TC = 90 °C
120
Pulsed collector current
ICM
220
Clamped inductive load current
ILM
220
Diode continuous forward current
IF
Single pulse forward current
IFSM
Gate-to-emitter voltage
VGE
Power dissipation, IGBT
PD
Power dissipation, diode
Isolation voltage
PD
VISOL
A
TC = 25 °C
110
TC = 90 °C
76
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
550
A
± 20
V
TC = 25 °C
577
TC = 90 °C
327
TC = 25 °C
238
TC = 90 °C
135
Any terminal to case, t = 1 min
2500
W
V
Revision: 31-May-16
Document Number: 95737
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of threshold
voltage
Collector to emitter leakage current
Forward voltage drop, diode
Gate to emitter leakage current
SYMBOL
VBR(CES)
VCE(on)
VGE(th)
VGE(th)/TJ
ICES
VFM
IGES
MIN.
TYP.
MAX.
VGE = 0 V, IC = 100 μA
TEST CONDITIONS
650
-
-
VGE = 15 V, IC = 100 A
-
1.71
2.00
VGE = 15 V, IC = 100 A, TJ = 125 °C
-
2.00
-
VGE = 15 V, IC = 100 A, TJ = 175 °C
-
2.17
-
5.1
6.1
8.3
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
-
-20
-
VGE = 0 V, VCE = 650 V
-
1.2
50
VGE = 0 V, VCE = 650 V, TJ = 125 °C
-
80
-
VCE = VGE, IC = 3.3 mA
VGE = 0 V, VCE = 650 V, TJ = 175 °C
-
2.0
-
IC = 100 A, VGE = 0 V
-
2.00
2.53
UNITS
V
mV/°C
μA
mA
IC = 100 A, VGE = 0 V, TJ = 125 °C
-
1.69
-
IC = 100 A, VGE = 0 V, TJ = 175 °C
-
1.55
-
V
VGE = ± 20 V
-
-
± 660
nA
MIN.
TYP.
MAX.
UNITS
-
6600
-
-
340
-
-
180
-
-
190
-
-
65
-
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
TEST CONDITIONS
VGE = 0 V, VCE = 30 V, f = 1.0 MHz
Total gate charge (turn-on)
Qg
Gate to emitter charge (turn-on)
Qge
Gate to collector charge (turn-on)
Qgc
-
80
Turn-on switching loss
Eon
-
0.32
-
Turn-off switching loss
Eoff
-
1.5
-
Total switching loss
Etot
-
1.82
-
Turn-on delay time
td(on)
-
114
-
-
73
-
-
107
-
-
68
-
-
0.52
-
-
1.85
-
-
2.37
-
-
115
-
-
74
-
-
114
-
-
89
-
Rise time
Turn-off delay time
Fall time
tr
Eon
Eoff
Total switching loss
Etot
Turn-on delay time
td(on)
Fall time
Energy losses
include tail and
diode
recovery.
tf
Turn-on switching loss
Turn-off delay time
IC = 100 A, VCC = 325 V,
VGE = 15 V, Rg = 4.7 
L = 500 μH
td(off)
Turn-off switching loss
Rise time
IC = 100 A, VCC = 400 V, VGE = 15 V
tr
IC = 100 A, VCC = 325 V,
VGE = 15 V, Rg = 4.7  
L = 500 μH, TJ = 125 °C
td(off)
tf
Reverse bias safe operating area
RBSOA
TJ = 175 °C, IC = 220 A, Rg = 10 
VGE = 15 V to 0 V, VCC = 325 V,
VP = 650 V, L = 500 μH
Short circuit safe operating area
SCSOA
VGE = 15 V, VCC = 400 V, Rg = 4.7 
VP  650 V, TJ = 150 °C
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
IF = 50 A, dIF/dt = 200 A/μs, 
VR = 200 V, TJ = 125 °C
pF
nC
mJ
ns
mJ
ns
Fullsquare
-
-
5.5
μs
-
72
-
ns
-
5.3
-
A
-
192
-
nC
-
149
-
ns
-
13
-
A
-
974
-
nC
Revision: 31-May-16
Document Number: 95737
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-GT120DA65U
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MAX.
UNITS
-
175
°C
-
0.26
-
-
0.63
-
0.1
-
-
30
-
g
Torque to terminal
-
-
1.1 (9.7)
Nm (lbf.in)
Torque to heatsink
-
-
1.3 (11.5)
Nm (lbf.in)
TJ, TStg
Junction and storage temperature range
IGBT
Junction to case
TEST CONDITIONS
MIN.
TYP.
-40
-
RthJC
Diode
Case to heatsink
RthCS
Flat, greased surface
Weight
Mounting torque
Case style
SOT-227
180
Allowable Case Temperature (°C)
240
220
200
180
IC (A)
160
TJ = 175 °C
140
TJ = 25 °C
120
100
TJ = 125 °C
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
160
140
120
100
DC
80
60
40
20
0
0
4.0
20
40
60
80 100 120 140 160 180 200
VCE (V)
IC - Continuous Collector Current (A)
Fig. 1 - Typical IGBT Output Characteristics, VGE = 15 V
Fig. 3 - Maximum IGBT Continuous Collector Current vs.
Case Temperature
2.4
240
220
2.2
200
100 A
2.0
180
160
1.8
VGE = 12 V
VGE = 15 V
VGE = 18 V
140
120
VCE (V)
IC (A)
°C/W
100
80
1.6
50 A
1.4
1.2
60
20 A
1.0
40
VGE = 9 V
20
0.8
0
0.6
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
20
40
60
80
100
120
140
160
180
VCE (V)
TJ (°C)
Fig. 2 - Typical IGBT Output Characteristics, TJ = 125 °C
Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature
Revision: 31-May-16
Document Number: 95737
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VS-GT120DA65U
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100
10
VCE = 20 V
90
TJ = 175 °C
1
80
70
IC (A)
ICES (mA)
TJ = 125 °C
60
50
TJ = 25 °C
40
TJ = 125 °C
0.1
0.01
30
0.001
20
TJ = 25 °C
10
0.0001
0
5
6
7
8
9
10
11
12
0
100
200
300
400
500
600
700
VCES (V)
VGE (V)
Fig. 5 - Typical IGBT Transfer Characteristics
Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current
7.0
240
TJ = 175 °C
220
6.5
200
6.0
180
TJ = 25 °C
160
5.0
IF (A)
VGEth (V)
5.5
4.5
TJ = 125 °C
140
TJ = 25 °C
120
100
80
4.0
TJ = 125 °C
3.5
60
40
3.0
20
0
2.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0.5
1.0
1.5
2.0
2.5
3.0
IC (mA)
VFM (V)
Fig. 6 - Typical IGBT Gate Threshold Voltage
Fig. 9 - Typical Diode Forward Characteristics
180
Allowable Case Temperature (°C)
1000
IC (A)
100
10
1
10
100
1000
VCE (V)
Fig. 7 - IGBT Reverse BIAS SOA TJ = 175 °C, VGE = 15 V
160
140
120
DC
100
80
60
40
20
0
0
20
40
60
80
100
120
140
IF - Continuous Forward Current (A)
Fig. 10 - Maximum Diode Continuous Forward Current vs.
Case Temperature
Revision: 31-May-16
Document Number: 95737
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VS-GT120DA65U
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3
1000
td(on)
2.5
Switching Time (ns)
td(off)
Energy (mJ)
2
1.5
Eoff
1
Eon
0.5
0
tr
100
tf
10
0
20
40
60
80
100
120
140
0
5
10
15
IC (A)
25
30
35
40
45
50
Rg (Ω)
Fig. 14 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, VCC = 600 V, IC = 100 A, VGE = 15 V, L = 500 μH
Fig. 11 - Typical IGBT Energy Loss vs. IC
TJ = 125 °C, VCC = 325 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
180
1000
160
TJ = 125 °C
140
100
120
tf
t d(off)
trr (ns)
Switching Time (ns)
20
t d(on)
100
80
60
tr
TJ = 25 °C
40
20
10
0
0
20
40
60
80
100
120
100
140
300
400
dIF/dt (A/μs)
Fig. 12 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, VCC = 325 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
Fig. 15 - Typical trr Diode vs. dIF/dt
Vrr = 200 V, IF = 50 A
7
500
24
22
Eon
6
20
18
5
TJ = 125 °C
16
4
Irr (A)
Energy (mJ)
200
IC (A)
3
Eoff
14
12
10
8
2
6
TJ = 25 °C
4
1
2
0
0
0
5
10
15
20
25
30
35
40
45
50
100
200
300
400
Rg (Ω)
dIF/dt (A/μs)
Fig. 13 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, VCC = 325 V, IC = 100 A, VGE = 15 V, L = 500 μH
Fig. 16 - Typical Irr Diode vs. dIF/dt
Vrr = 200 V, IF = 50 A
500
Revision: 31-May-16
Document Number: 95737
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT120DA65U
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1600
1400
TJ = 125 °C
1200
Qrr (nC)
1000
800
600
400
TJ = 25 °C
200
0
100
200
300
400
500
dIF/dt (A/μs)
Fig. 17 - Typical Diode Reverse Recovery Charge vs. dIF/dt
Vrr = 200 V, IF = 50 A
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics, IGBT
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
t1 - Rectangular Pulse Duration (s)
Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics, Diode
Revision: 31-May-16
Document Number: 95737
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ORDERING INFORMATION TABLE
Device code
VS-
G
T
120
D
A
65
U
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Insulated Gate Bipolar Transistor (IGBT)
3
-
T = Trench IGBT
4
-
Current rating (120 = 120 A)
5
-
Circuit configuration (D = single switch with antiparallel diode)
6
-
Package indicator (A = SOT-227)
7
-
Voltage rating (65 = 650 V)
8
-
Speed/type (U = ultrafast IGBT)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
3 (C)
Single switch diode
Lead Assignment
4
3
1
2
D
2 (G)
1, 4 (E)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
Packaging information
www.vishay.com/doc?95425
Revision: 31-May-16
Document Number: 95737
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Outline Dimensions
www.vishay.com
Vishay Semiconductors
SOT-227 Generation II
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
25.70 (1.012)
24.70 (0.972)
-B-
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
R full 2.10 (0.083)
2.20 (0.087)
30.50 (1.200)
29.80 (1.173)
31.50 (1.240)
32.10 (1.264)
4x
2.20 (0.087)
1.90 (0.075)
8.30 (0.327)
7.70 (0.303)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
12.30 (0.484)
11.70 (0.460)
-C0.13 (0.005)
25.00 (0.984)
25.50 (1.004)
Note
• Controlling dimension: millimeter
Revision: 02-Aug-12
Document Number: 95423
1
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Revision: 02-Oct-12
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Document Number: 91000