SST6839 Transistors PNP general purpose transistor SST6839 zFeatures zExternal dimensions (Unit : mm) 1) BVCEO < 40V (IC = −1mA) 2) Complements the SST6838. SST6839 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 0.45±0.1 0.95 0.95 SST6839 Packaging type SST3 RFQ Marking Code Basic ordering unit (pieces) (2) (1) 1.3 +0.2 −0.1 Part No. 2.4±0.2 zPackage, marking and packaging specifications 0~0.1 0.2Min. (3) All terminals have the same dimensions +0.1 0.15 −0.06 0.4 +0.1 −0.05 T116 3000 (1) Emitter (2) Base (3) Collector ROHM : SST3 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current VCBO VCEO VEBO IC Collector power dissipation Junction temperature Storage temperature PC Tj Tstg Limits Unit −50 −40 −5 −0.2 V V V A 0.2 150 −55 to +150 W °C °C zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Symbol Typ. Max. Unit −50 −40 − − − − V V ICBO − − − − −0.5 −5 µA IEBO − − − − −0.5 −5 µA − − −0.5 −0.7 BVCBO BVCEO VCE(sat) Min. V − − − − − − 800 1000 − − − DC current transfer ratio hFE1 100 − − DC current transfer ratio hFE2 100 − Transition frequency Collector output capacitance fT Cob − 140 − MHz − 3.5 − pF Emitter input capacitance Cib − 17 − pF Conditions IC= −10µA IC= −1mA VCB= −30V (Ta= −40°C to +125°C) (Ta= −40°C to +125°C) (Ta=85°C) VCB= −30V (Ta=125°C) (Ta=85°C) VEB= −4V VEB= −4V (Ta=125°C) (Ta=85°C) (Ta=125°C) IC/IB= −100mA/−10mA IC/IB= −100mA/−10mA VCE/IC= −5V/−1mA VCE/IC= −5V/−1mA (Ta= −40°C to +25°C) (Ta=85°C) VCE/IC= −5V/−1mA (Ta=125°C) (Ta= −40°C to +25°C) (Ta=25°C) VCE/IC= −5V/−100mA VCE= −12V , IC= −2mA , f= 100MHz VCB= −12V , IE= 0A , f= 1MHz VEB= −0.5V , IC= 0A , f= 1MHz Rev.A (Ta=25°C) (Ta=25°C) 1/2 SST6839 Transistors zElectrical characteristic curves −5 −2 −1 −0.5 −0.2 −0.1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −24.5 −21.0 −6 −17.5 −14.0 −4 −10.5 −7.0 −2 −3.5µA −0.8 −0.4 −1.2 −1.6 VCE= −5V −3V −1V 25˚C 200 100 −40˚C 200 100 50 50 −250 −200 −150 −40 −100 −20 −50µA IB=0 −1 −2 −3 −4 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) −1 Ta=25˚C −0.5 −0.2 IC/IB=50 −0.1 20 10 −0.05 −2 −5 −10 −20 −0.2 −0.5 −1 −50 −100 1000 TRANSITION FREQUENCY : fT (MHz) −0.2 −0.1 Ta=100˚C 25˚C −40˚C −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current (II) 500 200 100 50 0.5 1 2 5 10 20 −5 −10 −20 −50 −100 Fig.6 Collector-emitter saturation voltage vs. collector current (I) Ta=25˚C VCE= −12V lC/lB=10 −2 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current (II) Fig.4 DC current gain vs. collector current (I) −0.5 −0.2 −0.5 −1 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) −1 VCE= −6V −5 −10 −20 −50 −100 −2 50 100 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) −0.2 −0.5 −1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −500 −450 −400 −350 −300 Fig.3 Grounded emitter output characteristics (II) Ta=100˚C DC CURRENT GAIN : hFE Ta=25˚C −60 Ta=25˚C 0 Fig.2 Grounded emitter output characteristics (I) 500 500 −80 IB=0 −2.0 COLLECTOR TO MITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics DC CURRENT GAIN : hFE −28.0 −8 0 BASE TO EMITTER VOLTAGE : VBE (V) −100 −31.5 COLLECTOR CURRENT : IC (mA) −10 −35.0 Ta=25˚C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −20 −10 VCE= −6V Ta=100˚C 25˚C −40˚C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) −50 20 Ta=25˚C f=1MHz IE=0A IC=0A Cib 10 Co b 5 2 −0.5 −1 −2 −5 −10 −20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1