NTE2992 MOSFET N - Channel, Enhancement Mode High Speed Switch Features: D 4V Gate Drive D Low Drain - Source On - Resistance D High Forward Transfer Admittance D Low Leakage Current Applications: D Switching Regulators D UPS D DC - DC Converters D General Purpose Power Amplifier Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain - Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Drain - Gate Voltage (RGS = 20kΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Gate - Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A Maximum Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55° to +150°C Thermal Resistance, Junction - to - Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W Thermal Resistance, Junction - to - Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.77°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Drain- Source Breakdown Voltage Gate Threshold Voltage Symbol Test Conditions V(BR)DSS ID = 10mA, VGS = 0V VGS(th) ID = 1mA, VDS = 10V Min Typ Max Unit 600 - - V 1.5 - 3.5 V Zero Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V - - 300 µA Gate- Source Leakage Current IGSS VGS = ±25V, VDS = 0V - - ±100 nA RDS(on) ID = 3A, VGS = 10V - 0.95 1.25 Ω Forward Transfer Admittance gfs ID = 3A, VDS = 10V 3 4 - S Input Capacitance Ciss VDS = 10V, VGS = 0V, f = 1MHz - 1400 2000 pF Output Capacitance Coss - 75 120 pF Reverse Transfer Capacitance Crss - 250 380 pF Drain- Source On - State Resistance Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Turn - On Time Symbol Min Typ Max Unit - 40 80 ns - 25 50 ns td(off) - 85 170 ns tf - 20 40 ns - 56 110 nC td(on) Rise Time VDD = 300V, ID = 3A, VGS = 10V, RL = 100Ω Ω tr Turn - Off Time Fall Time Test Conditions Total Gate Charge Qg Gate- Source Charge Qgs - 32 - nC Gate- Drain (“Miller”) Charge Qgd - 24 - nC VDD = 400V, VGS = 10V, ID = 6A Source- Drain Diode Ratings and Characteristics: (TA = +25°C unless otherwise specified) Continuous Drain Reverse Current IDR - - 6 A Pulse Drain Reverse Current IDRP - - 24 A Diode Forward Voltage VDSF IDR = 6A, VGS = 0V - - -2 V Reverse Recovery Time trr - 460 - ns Reverse Recovered Charge Qrr IDR = 6A, VGS = 0V, dIDR/dt = 100A/µs µ - 3.5 - µC .114 (2.9) .181 (4.6) .126 (3.2) Dia Max Max .405 (10.3) Max Isol .252 (6.4) .622 (15.0) Max G D S .118 (3.0) Max .531 (13.5) Min .098 (2.5) .100 (2.54)