2999

NTE2999
MOSFET
N−Channel, Enhancement Mode
High Speed Switch
TO−220 Full Pack Type Package
Features:
D High Speed Switching
D Low On−Resistance
D No Secondary Breakdown
D Low Driving Power
D Avalanche−Proof
D
G
S
Applications:
D Switching Regulators
D UPS (Uninterruptible Power Supply)
D DC−DC Converters
Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Repetitive or Non−Repetitive (TCh x +150C), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Maximum Avalanche Energy (L = 1.42mH, VCC = 50V), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . 77.6mJ
Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Channel Temperature TCh . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Maximum Thermal Resistance, Junction−to−Case, RthCh−C . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W
Maximum Thermal Resistance, Junction−to−Ambient, RthCh−A . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Drain−Source Breakdown Voltage
Gate−Source Cutoff Voltage
Zero Gate Voltage Drain Current
Gate−Source Leakage Current
Drain−Source On−State Resistance
Forward Transfer Admittance
Symbol
Test Conditions
Min
Typ
Max
Unit
500
−
−
V
3.5
4.0
4.5
V
TCh = +25C
−
10
500
A
TCh = +125C
−
0.2
1.0
mA
VGS = 35V, VDS = 0V
−
10
100
nA
RDS(on)
ID = 5A, VGS = 10V
−
0.73
0.90

gfs
ID = 5A, VDS = 25V
2.5
5.0
−
S
V(BR)DSS ID = 1mA, VGS = 0V
VGS(off)
IDSS
IGSS
ID = 1mA, VDS = VGS
VDS 500V,
VGS = 0V
Rev. 9−14
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
−
950
1450
pF
−
180
270
pF
−
80
120
pF
−
25
40
ns
−
70
110
ns
td(off)
−
110
−
ns
tf
−
45
70
ns
A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn−On Time
td(on)
tr
Turn−Off Time
Test Conditions
VDS = 25V, f = 1MHz, VGS = 0V
VCC = 300V, ID = 10A,
VGS = 10CV, RGS = 10
Avalanche Capability
IAV
L = 100H, TCh = +25C
10
−
−
Diode Forward On−Voltage
VSD
IF = 2x IDR, VGS = 0V, TCh = +25C
−
1.10
1.65
V
IF = IDR, VGS = 0V,
−di/dt = 100A/s, TCh = +25C
−
450
−
ns
−
5.5
−
C
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
.181 (4.6)
Max
.114 (2.9)
.126 (3.2) Dia Max
.405 (10.3) Max
Isol
.252
(6.4)
.622
(15.0)
Max
G
D
S
.118
(3.0)
Max
.531
(13.5)
Min
.098 (2.5)
.100 (2.54)