NTE NTE2973

NTE2973
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Applications:
D SMPS
D DC–DC Converter
D Battery Charger
D Power Supply of Printer
D Copier
D HDD, FDD, TV, VCR
D Personal Computer
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Drain–Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Gate–Source Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42A
Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275W
Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Channel–to–Case, Rth(ch–c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45°C/W
Electrical Characteristics: (Tch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain–Source Breakdown Voltage
V(BR)DSS VDS = 0V, ID = 1mA
900
–
–
V
Gate–Source Breakdown Voltage
V(BR)GSS VDS = 0V, IG = ±100µA
±30
–
–
V
Gate–Source Leakage
IGSS
VGS = ±25V, VDS = 0V
–
–
±10
µA
Zero Gate Voltage Drain Current
IDSS
VDS = 900V, VGS = 0
–
–
1.0
mA
Gate Threshold Voltage
VGS(th)
VDS = 10V, ID = 1mA
2.0
3.0
4.0
V
Static Drain–Source ON Resistance
RDS(on)
VGS = 10V, ID = 7A
–
0.63
0.85
Ω
Drain–Source On–State Voltage
VDS(on)
VGS = 10V, ID = 7A
–
4.41
5.95
V
|yfs|
VGS = 10V, ID = 7A
9
15
–
S
Forward Transfer Admittance
Electrical Characteristics (Cont’d): (Tch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Typ
Max
Unit
–
2900
–
pF
Input Capacitance
Ciss
Output Capacitance
Coss
–
290
–
pF
Reverse Transfer Capacitance
Crss
–
50
–
pF
Turn–On Delay Time
td(on)
–
45
–
ns
–
65
–
ns
td(off)
–
325
–
ns
tf
–
100
–
ns
–
1.0
1.5
V
Rise Time
tr
Turn–Off Delay Time
Fall Time
Diode Forward Voltage
VSD
VGS = 0V, VDS = 25V, f = 1MHz
Min
VDD = 200V, ID = 7A, VGS = 10V,
RGEN = RGS = 50Ω
Ω
IS = 7A, VGS = 0V
.190 (4.82)
.615 (15.62)
.787
(20.0)
.591
(15.02)
.126 (3.22) Dia
.787
(20.0)
G
D
S
.215 (5.47)