NTE2994 MOSFET N−Channel, Enhancement Mode High Speed Switch Absolute Maximum Ratings: (TC = +255C unless otherwise specified) Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V Continuous Drain Current, ID Continuous (TC = +255C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +10A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +40A Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Avalanche Energy (VCC = 45V, L = 1.58mH), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86.2mJ Avalanche Current, Repetitive or Non−Repetitive (TJ 3 +1505C), IAR . . . . . . . . . . . . . . . . . . . . . . 10A Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.55C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.55C/W Electrical Characteristics: (TJ = +255C unless otherwise specified) Parameter Symbol Drain−Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(th) Min Typ Max Unit ID = 1mA, VGS = 0V 450 − − V ID = 1mA, VDS = VGS 3.5 4.0 4.5 V VDS = 450, VGS = 0V, TJ = +255C − 10 500 3A VDS = 450, VGS = 0V, TJ = +1255C − 0.2 1.0 mA VGS = +30V, VDS = 0V − 10 100 nA RDS(on) ID = 5A, VGS = 10V − 0.58 0.65 + gfs ID = 5A, VDS = 25V 3.0 6.0 − S Input Capacitance Ciss VDS = 25v, VGS = 0V, f = 1MHz − 950 1450 pF Output Capacitance Coss − 180 270 pF Reverse Transfer Capacitance Crss − 80 120 pF Turn−On Time td(on) − 25 40 ns − 70 110 ns td(off) − 70 110 ns tf − 50 80 ns Zero Gate Voltage Drain Current Gate−Source Leakage Current Drain−Source On−State Resistance Forward Transconductance Rise Time Turn−Off Time Fall Time IDSS IGSS tr Test Conditions VCC = 300V, VGS = 10V, ID = 10A, RGS = 10+ Avalanche Capability IAV L = 1003H, TJ = +255C 10 − − A Diode Forward On−Voltage VSD IF = 2 x IDR, VGS = 0V, TJ = +255C − 1.1 1.65 nC IF = IDR, VGS = 0V, − dlF/dt = 100A/3s, TJ = +255C − 400 − ns Reverse Recovery Time trr Reverse Recovery Charge Qrr 5.0 3C Rev. 10−13 D G S .177 (4.5) .126 (3.2) Dia Max .106 (2.7) .405 (10.3) Max .272 (6.9) .622 (15.0) G D S .220 (5.6) Max .512 (13.0) Min .102 (2.6) .100 (2.54)