NTE2387 MOSFET N−Channel Enhancement Mode, High Speed Switch TO220 Type Package Absolute Maximum Ratings: Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain−Gate Voltage (RGS = 20k+ ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V Pulsed Drain Current, IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Continuous Drain Current, ID TC = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0A TC = +1005C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Total Dissipation (TC = +255C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Maximum Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.05C/W Typical Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 605C/W Electrical Characteristics: (TC = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 800 − − V VGS = 0, VDS = 800V, TC = +255C − 2 20 5A VGS = 0, VDS = 800V, TC = +1255C − 0.1 1.0 mA IGSS VDS = 0, VGS = +30V − 10 100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 1mA 2.1 3.0 4.0 V Static Drain−Source On Resistance RDS(on) VGS = 10V, ID = 1.5A − 2.7 3.0 + Forward Transconductance gfs VDS = 25V, ID = 1.5A 3.0 4.3 − mho Input Capacitance Ciss VDS = 25V, VGS = 0, f = 1MHz − 1000 1250 pf Output Capacitance Coss − 80 120 pf Reverse Transfer Capacitance Crss − 30 50 pf Turn−On Time td(on) − 10 25 ns − 25 40 ns td(off) − 130 150 ns tf − 40 60 ns Static Characteristics Drain−Source Breakdown Voltage V(BR)DSS Zero−Gate Voltage Drain Current IDSS Gate−Body Leakage Current ID = 2505 A, VGS = 0 Dynamic Characteristics Rise Time Turn−Off Delay Time Fall Time tr VDD = 30V, ID = 2.3A, VGS = 10V, RGS = 50+ , Rgen = 50+ Rev. 10−13 Electrical Characteristics (Cont’d): (TC = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit LD Measured from contact screw on tab to center of die − 3.5 − nH Measured from drain lead 6mm from package to center of die − 4.5 − nH Measured from the source lead 6mm from package to source bonding pad − 7.5 − nH IDR − − 4 A Pulsed Reverse Drain Current IDRM − − 16 A Diode Forward Voltage VSD IF = 4A, VGS = 0 − 1.0 1.3 V Reverse Recovery Time trr − 1800 − ns Reverse Recovered Charge Qrr IF = 4A, diF/dt = 100A/5 s, VGS = 0, VR = 100V − 12 − 5C Dynamic Characteristics (Cont’d) Internal Drain Inductance Internal Source Inductance LS Source−Drain Diode Ratings and Characteristics Continuous Reverse Drain Current D .420 (10.67) Max .110 (2.79) G .500 (12.7) Max .147 (3.75) Dia Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate Source .100 (2.54) Drain/Tab S